FDPF18N50T [ONSEMI]
功率 MOSFET，N 沟道，UniFETTM，500 V，18 A，265 mΩ，TO-220F;
| 型号： | FDPF18N50T |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，UniFETTM，500 V，18 A，265 mΩ，TO-220F 局域网 开关 脉冲 晶体管 |
| 文件： | 总11页 (文件大小：1658K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDP18N50 / FDPF18N50 / FDPF18N50T
TM
N-Channel UniFET MOSFET
500 V, 18 A, 265 mΩ
Features
•
•
•
•
RDS(on) = 220 mΩ (Typ.) @ VGS = 10 V, ID = 9 A
Low Gate Charge (Typ. 45 nC)
Low Crss (Typ. 25 pF)
Description
UniFETTM MOSFET is ON Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
100% Avalanche Tested
Applications
•
•
•
LCD/LED/PDP TV
Lighting
Uninterruptible Power Supply
D
G
G
D
S
G
D
TO-220
TO-220F
S
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
FDPF18N50 /
FDPF18N50T
Symbol
Parameter
FDP18N50
Unit
VDSS
Drain-Source Voltage
Drain Current
500
V
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
18
10.8
18 *
10.8 *
A
A
(Note 1)
IDM
Drain Current
- Pulsed
72
72 *
A
V
VGSS
EAS
IAR
Gate-Source voltage
30
945
18
(Note 2)
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
(Note 1)
(Note 1)
(Note 3)
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
23.5
4.5
mJ
V/ns
Power Dissipation
(TC = 25°C)
- Derate Above 25°C
235
1.88
38.5
0.3
W
W/°C
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
300
°C
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
°C
* Drain current limited by maximum junction temperature
Thermal Characteristics
FDPF18N50 /
FDPF18N50T
Symbol
Parameter
FDP18N50
Unit
RθJC
RθJA
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
0.53
62.5
3.3
°C/W
°C/W
62.5
©2012 Semiconductor Components Industries, LLC.
November-2017, Rev 3
Publication Order Number:
FDPF18N50T/D
Package Marking and Ordering Information
Part Number
FDP18N50
Top Mark
FDP18N50
Package
TO-220
Packing Method
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
50 units
50 units
Tube
Tube
Tube
FDPF18N50
FDPF18N50T
FDPF18N50
FDPF18N50T
TO-220F
TO-220F
N/A
N/A
N/A
N/A
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Typ.
Max
Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 μA
D = 250 μA, Referenced to 25°C
500
--
--
--
--
V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
I
0.5
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125°C
--
--
--
--
1
10
μA
μA
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
--
--
--
--
100
nA
nA
-100
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 9 A
VDS = 40 V, ID = 9 A
3.0
--
--
0.220
25
5.0
0.265
--
V
Ω
S
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1 MHz
--
--
--
2200
330
25
2860
430
40
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
VDD = 250 V, ID = 18 A,
--
--
--
--
--
--
--
55
165
95
120
340
200
190
60
ns
ns
V
GS = 10 V, RG = 25 Ω
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ns
(Note 4)
(Note 4)
90
ns
Qg
VDS = 400 V, ID = 18 A,
VGS = 10 V
45
nC
nC
nC
Qgs
Qgd
12.5
19
--
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
18
72
1.4
--
A
A
ISM
VSD
trr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, IS = 18 A
--
V
VGS = 0 V, IS = 18 A,
500
5.4
ns
μC
dIF/dt =100 A/μs
Qrr
Reverse Recovery Charge
--
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 5.2 mH, I = 18 A, V = 50 V, R = 25 Ω, starting T = 25°C.
AS
DD
G
J
3. I ≤ 18 A, di/dt ≤ 200 A/μs, V ≤ BV
, starting T = 25°C.
SD
DD
DSS
J
4. Essentially independent of operating temperature typical characteristics.
www.onsemi.com
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
102
101
100
VGS
102
101
100
10-1
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
150oC
25oC
-55oC
* Notes :
1. 250μs Pulse Test
* Notes :
1. VDS = 40V
2. 250μs Pulse Test
10 12
o
2. TC = 25 C
10-1
100
101
2
4
6
8
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
102
101
100
0.6
0.5
VGS = 10V
0.4
0.3
VGS = 20V
150oC
25oC
0.2
* Notes :
1. VGS = 0V
2. 250μs Pulse Test
o
* Note : TJ = 25 C
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0
5
10 15 20 25 30 35 40 45 50 55 60 65 70
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
5000
12
C
C
iss = Cgs + Cgd (Cds = shorted)
oss = Cds + Cgd
Crss = Cgd
10
8
4000
3000
2000
1000
0
VDS = 100V
VDS = 250V
Coss
VDS = 400V
C
iss
6
4
* Note :
1. VGS = 0 V
2. f = 1 MHz
C
rss
2
* Note : ID = 18A
0
10-1
100
101
0
10
20
30
40
50
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
www.onsemi.com
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
1.2
1.1
1.0
* Notes :
1. VGS = 0 V
0.9
* Notes :
1. VGS = 10 V
2. ID = 250μA
0.5
2. ID = 9 A
0.8
-100
0.0
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
T, Junction Temperature [oC]
TJ, Junction Temperature [oC]
J
Figure 9-1. Maximum Safe Operating Area
- FDP18N50
Figure 9-2. Maximum Safe Operating Area
- FDPF18N50 / FDPF18N50T
102
102
10 μs
10 μs
100 μs
1 ms
10 ms
100 ms
DC
100 μs
1 ms
101
101
100
10-1
10-2
10 ms
100 ms
Operation in This Area
is Limited by R DS(on)
DC
Operation in This Area
is Limited by R DS(on)
100
-1
10
* Notes :
* Notes :
1. TC = 25 o
C
2. TJ = 150 o
C
1. TC = 25 o
C
2. TJ = 150 o
C
3. Single Pulse
3. Single Pulse
-2
10
100
101
102
100
101
102
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current vs. Case Temperature
20
15
10
5
0
25
50
75
100
125
150
TC, Case Temperature [oC]
www.onsemi.com
4
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve - FDP18N50
1 00
D = 0.5
0 .2
10 -1
0.1
PDM
0.05
t1
t2
*
N o te s
1 . Z θ JC (t)
2 . D u ty F actor, D = t1/t2
:
0 .02
0 .01
o
=
0.53 C /W M ax.
10 -2
3 . T JM
-
T C
=
P D M
* Z θ JC (t)
sing le p ulse
10 -3
1 0-5
1 0-4
10 -2
10 -1
1 00
10 1
t1 , S q u a re W a ve P u lse D u ra tio n [se c]
Figure 11-2. Transient Thermal Response Curve - FDPF18N50 / FDPF18N50T
D = 0.5
1 00
0 .2
0.1
0.05
PDM
10 -1
0 .02
t1
0 .01
t2
*
N o te s
:
o
1 . Z θ JC (t)
=
3.3 C /W M ax.
2 . D u ty F actor, D = t1/t2
3 . T JM
-
T C
=
P D M
* Z θ JC (t)
sing le pu lse
10 -3
10 -2
1 0-5
1 0-4
10 -2
10 -1
1 00
10 1
t1 , S q u a re W a ve P u lse D u ra tio n [se c]
www.onsemi.com
5
I
= const.
G
Figure 12. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
VGS
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
www.onsemi.com
6
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
www.onsemi.com
7
Mechanical Dimensions
Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and
conditions, specif-ically the warranty therein, which covers ON Semiconductor products.
www.onsemi.com
8
Mechanical Dimensions
Figure 17. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and
conditions, specif-ically the warranty therein, which covers ON Semiconductor products.
www.onsemi.com
9
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
www.onsemi.com
❖
相关型号：
SI9130DB
5- and 3.3-V Step-Down Synchronous ConvertersWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1-E3
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135_11
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
©2020 ICPDF网 联系我们和版权申明