FDPF44N25T [ONSEMI]
功率 MOSFET，N 沟道，UniFETTM，250V，44A，69mΩ，TO-220F;
| 型号： | FDPF44N25T |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，UniFETTM，250V，44A，69mΩ，TO-220F 局域网 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：523K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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August 2014
FDPF44N25T
N-Channel UniFET MOSFET
250 V, 44 A, 69 mΩ
TM
Features
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
•
•
•
RDS(on) = 69 mΩ (Max.) @ VGS = 10 V, ID = 22 A
Low Gate Charge (Typ. 47 nC)
Low Crss (Typ. 60 pF)
Applications
•
•
•
•
PDP TV
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
D
D
G
TO-220F
LG-formed
G
G
D
S
S
TO-220F
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
FDPF44N25T
Symbol
VDSS
Parameter
FDPF44N25TRDTU
Unit
Drain-Source Voltage
Drain Current
250
V
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
44*
26.4*
A
A
(Note 1)
IDM
Drain Current
- Pulsed
176*
30
A
V
VGSS
EAS
IAR
Gate-Source voltage
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
2055
44
mJ
A
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/d
30.7
4.5
mJ
V/ns
Power Dissipation
(TC = 25°C)
- Derate Above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
38
0.3
W
W/°C
TJ, TSTG
-55 to +150
300
°C
°C
TL
*Drain current limited by maximum junction temperature.
Thermal Characteristics
FDPF44N25T
Symbol
Parameter
FDPF44N25TRDTU
Unit
RθJC
RθJA
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
3.3
°C/W
62.5
www.fairchildsemi.com
©2009 Fairchild Semiconductor Corporation
FDPF44N25T Rev. C2
1
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FDPF44N25T
FDPF44N25T
TO-220F
Tube
N/A
N/A
50 units
TO-220F
(LG-formed)
FDPF44N25TRDTU
FDPF44N25T
Tube
N/A
N/A
50 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 μA, TJ = 25°C
D = 250 μA, Referenced to 25°C
250
--
--
--
--
V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
I
0.25
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 250 V, VGS = 0 V
DS = 200 V, TC = 125°C
--
--
--
--
1
10
μA
μA
V
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
--
--
--
--
100
nA
nA
-100
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
VDS = VGS, ID = 250 μA
3.0
--
--
0.058
32
5.0
0.069
--
V
Ω
S
Static Drain-Source
On-Resistance
V
GS = 10 V, ID = 22 A
gFS
Forward Transconductance
VDS = 40 V, ID = 22 A
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
2210
450
60
2870
585
90
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
VDD = 125 V, ID = 44 A,
--
--
--
--
--
--
--
53
402
85
117
814
179
234
61
ns
ns
RG = 25 Ω
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ns
(Note 4)
(Note 4)
112
47
ns
Qg
VDS = 200 V, ID = 44 A,
GS = 10 V
nC
nC
nC
V
Qgs
Qgd
18
--
24
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
44
176
1.4
--
A
A
ISM
VSD
trr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, IS = 44 A
--
V
VGS = 0 V, IS = 44 A,
195
1.8
ns
μC
dIF/dt =100 A/μs
Qrr
Reverse Recovery Charge
--
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 1.7 mH, I = 44 A, V = 50 V, R = 25 Ω, starting T = 25°C.
AS
DD
G
J
3. I ≤ 44 A, di/dt ≤ 200 A/μs, V ≤ BV
, starting T = 25°C.
SD
DD
DSS
J
4. Essentially independent of operating temperature typical characteristics.
www.fairchildsemi.com
©2009 Fairchild Semiconductor Corporation
FDPF44N25T Rev. C2
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
102
102
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
101
150oC
101
25oC
-55oC
100
* Notes :
1. 250μs Pulse Test
* Notes :
1. VDS = 40V
o
2. TC = 25
C
2. 250μs Pulse Test
100
10-1
100
101
2
4
6
8
10
12
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
Drain Current and Gate Voltage
0.10
0.08
0.06
0.04
102
VGS = 10V
101
150oC
25oC
VGS = 20V
* Notes :
1. VGS = 0V
o
* Note : TJ = 25 C
2. 250μs Pulse Test
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
25
50
75
100
125
150
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
6000
Ciss = Cgs + Cgd (Cds = shorted)
VDS = 50V
Coss = Cds + Cgd
Crss = Cgd
10
5000
4000
3000
2000
1000
0
VDS = 125V
VDS = 200V
8
Coss
Ciss
6
4
2
* Note :
1. VGS = 0 V
Crss
2. f = 1 MHz
* Note : ID = 44A
50
0
10-1
100
101
0
10
20
30
40
60
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
www.fairchildsemi.com
©2009 Fairchild Semiconductor Corporation
FDPF44N25T Rev. C2
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
* Notes :
1. VGS = 0 V
0.9
* Notes :
1. VGS = 10 V
2. ID = 250 μA
2. ID = 22 A
0.8
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
50
40
30
20
10
0
102
10 μs
100 μs
1 ms
101
100
10-1
10-2
10 ms
100 ms
DC
Operation in This Area
is Limited by R DS(on)
* Notes :
1. TC = 25 o
2. TJ = 150 o
C
C
3. Single Pulse
25
50
75
100
125
150
100
101
102
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve
D=0.5
100
10-1
10-2
0.2
0.1
PDM
0.05
t1
t2
0.02
* Notes :
1. ZθJC(t) = 3.3 0C/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.01
single pulse
10-3
10-5
10-4
10-2
10-1
100
101
t1, Square Wave Pulse Duration [sec]
www.fairchildsemi.com
©2009 Fairchild Semiconductor Corporation
FDPF44N25T Rev. C2
4
VGS
Same Type
as DUT
50KΩ
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
I
= const.
G
Charge
Figure 12. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
V
VDS (t)
VDD
DUT
GS
t p
t p
Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com
©2009 Fairchild Semiconductor Corporation
FDPF44N25T Rev. C2
5
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
www.fairchildsemi.com
©2009 Fairchild Semiconductor Corporation
FDPF44N25T Rev. C2
6
10.36
9.96
2.66
2.42
B
B
A
3.28
3.08
7.00
0.70
3.40
3.20
6.88
6.48
1 X 45°
16.07
15.67
B
R1.00
2.96
2.56
1
3
1.47
1.24
8.50
7.50
B
R1.00
0.90
0.70
2.14
0.60
0.45
4.50
3.50
B
M
0.50
A
B
4.80
4.20
2.54
2.54
B
4.90
4.50
B
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B
DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. DRAWING FILE NAME: TO220N03REV2
10.36
9.96
2.66
2.42
B
A
B
3.28
3.08
7.00
3.40
3.20
0.70
SEE NOTE "F"
SEE NOTE "F"
6.88
6.48
1 X 45°
16.07
15.67
B
16.00
15.60
B
(3.23)
3
1
1.47
1.24
2.96
2.56
2.14
0.90
0.70
0.50
10.05
9.45
M
A
30°
0.45
0.25
0.60
0.45
B
2.54
2.54
4.90
4.50
B
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B
DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. OPTION 1 - WITH SUPPORT PIN HOLE.
OPTION 2 - NO SUPPORT PIN HOLE.
G. DRAWING FILE NAME: TO220M03REV5
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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相关型号：
FDPF51N25YDTU
N-Channel UniFETTM MOSFET 250V, 51A, 60mΩ, TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, Y FORMED LEAD, 800/RAIL
FAIRCHILD
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