FDPF51N25YDTU [ONSEMI]
功率 MOSFET,N 沟道,UniFETTM,250V,51A,60mΩ,TO-220F;型号: | FDPF51N25YDTU |
厂家: | ONSEMI |
描述: | 功率 MOSFET,N 沟道,UniFETTM,250V,51A,60mΩ,TO-220F |
文件: | 总13页 (文件大小:1198K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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March 2016
FDP51N25 / FDPF51N25
TM
N-Channel UniFET MOSFET
250 V, 51 A, 60 mΩ
Features
Description
•
•
•
RDS(on) = 48 mΩ(Typ.) @ VGS = 10 V, ID = 25.5 A
Low Gate Charge (Typ. 55 nC)
Low Crss (Typ. 63 pF)
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
Applications
•
•
•
•
PDP TV
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
D
D
D
G
G
G
D
G
S
G
S
D
S
S
TO-220F
Y-formed
TO-220F
TO-220F
TO-220
LG-formed
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
FDPF51N25
FDP51N25
FDPF51N25YDTU
FDPF51N25RDTU
Symbol
VDSS
Parameter
Unit
Drain-Source Voltage
Drain Current
250
V
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
51
30
51*
30*
A
A
(Note 1)
IDM
Drain Current
- Pulsed
A
204
204*
VGSS
EAS
IAR
Gate-Source voltage
30
1111
51
V
mJ
A
(Note 2)
(Note 1)
(Note 1)
Single Pulsed Avalanche Energy
Avalanche Current
EAR
VISO
Repetitive Avalanche Energy
32
mJ
Insulation withstand voltage (RMS) from all three leads to
external heat sink (t=0.3sec; TC = 25°C)
N/A
2500
V
(Note 3)
dv/dt
PD
Peak Diode Recovery dv/dt
4.5
V/ns
Power Dissipation
(TC = 25°C)
- Derate Above 25°C
320
3.7
38
0.3
W
W/°C
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
300
°C
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
°C
*Drain current limited by maximum junction temperature.
Thermal Characteristics
FDPF51N25
FDP51N25
FDPF51N25YDTU
FDPF51N25RDTU
Symbol
RθJC
RθJA
Parameter
Unit
°C/W
°C/W
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
0.39
62.5
3.3
62.5
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
1
FDP51N25 / FDPF51N25 Rev. 1.8
Package Marking and Ordering Information
Part Number
FDP51N25
Top Mark
FDP51N25
FDPF51N25
Package
TO-220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
50 units
FDPF51N25
TO-220F
Tube
N/A
N/A
TO-220F
(Y-formed)
FDPF51N25YDTU
FDPF51N25RDTU
FDPF51N25
FDPF51N25
Tube
Tube
N/A
N/A
N/A
N/A
50 units
50 units
TO-220F
(LG-formed)
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 μA, TJ = 25 °C
D = 250 μA, Referenced to 25°C
250
--
--
--
--
V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
I
0.25
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 250 V, VGS = 0 V
VDS = 200 V, TC = 125°C
--
--
--
--
1
10
μA
μA
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0V
--
--
--
--
100
nA
nA
-100
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 25.5 A
VDS = 40 V, ID = 25.5 A
3.0
--
--
0.048
43
5.0
0.060
--
V
Ω
S
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1 MHz
--
--
--
2620
530
63
3410
690
90
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
VDD = 125 V, ID = 51 A,
--
--
--
--
--
--
--
62
465
98
135
940
205
270
70
ns
ns
V
GS = 10 V, RG = 25 Ω
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ns
(Note 4)
(Note 4)
130
55
ns
Qg
VDS = 200 V, ID = 51 A,
VGS = 10 V
nC
nC
nC
Qgs
Qgd
16
--
27
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
51
204
1.4
--
A
A
ISM
VSD
trr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, IS = 51 A
--
V
VGS = 0 V, IS = 51 A,
178
4.0
ns
μC
dIF/dt =100 A/μs
Qrr
Reverse Recovery Charge
--
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 0.68 mH, I = 51 A, V = 50 V, R = 25 Ω, starting T = 25°C.
AS
DD
G
J
3. I ≤ 51 A, di/dt ≤ 200 A/μs, V ≤ BV
, starting T = 25°C.
SD
DD
DSS
J
4. Essentially independent of operating temperature typical characteristics.
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
2
FDP51N25 / FDPF51N25 Rev. 1.8
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
102
101
100
102
Bottom : 5.5 V
150oC
25oC
101
-55oC
* Notes :
1. VDS = 40V
* Notes :
1. 250μs Pulse Test
2. TC = 25oC
2. 250μs Pulse Test
100
10-1
100
101
2
4
6
8
10
12
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0.14
0.12
102
0.10
VGS = 10V
101
0.08
VGS = 20V
150oC
0.06
25oC
* Notes :
1. VGS = 0V
o
0.04
2. 250μs Pulse Test
* Note : TJ = 25 C
100
0.2
0
25
50
75
100
125
150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
6000
Ciss = Cgs + Cgd (Cds = shorted)
10
Coss = Cds + Cgd
Crss = Cgd
VDS = 50V
VDS = 125V
8
6
4
2
0
VDS = 200V
Coss
4000
2000
0
C
iss
* Note ;
1. VGS = 0 V
Crss
2. f = 1 MHz
* Note : ID = 51A
50
0
10
20
30
40
60
10-1
100
101
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
3
FDP51N25 / FDPF51N25 Rev. 1.8
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
* Notes :
1. VGS = 0 V
0.9
0.8
* Notes :
1. VGS = 10 V
2. ID = 250 μA
2. ID = 25.5 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 9-1. Maximum Safe Operating Area
for FDP51N25
Figure 9-2. Maximum Safe Operating Area
for FDPF51N25 / FDPF51N25YDTU
10 μs
102
102
101
100
10-1
10-2
10 μs
100 μs
100 μs
1 ms
1 ms
10 ms
10 ms
101
100 ms
Operation in This Area
is Limited by R DS(on)
DC
100 ms
Operation in This Area
is Limited by R DS(on)
DC
100
10-1
10-2
* Notes :
1. TC = 25 o
2. TJ = 150 o
* Notes :
C
1. TC = 25 o
2. TJ = 150 o
C
C
C
3. Single Pulse
3. Single Pulse
100
101
102
100
101
102
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
60
50
40
30
20
10
0
25
50
75
100
125
150
TC, Case Temperature [oC]
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
4
FDP51N25 / FDPF51N25 Rev. 1.8
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FDP51N25
D=0.5
10-1
0.2
0.1
PDM
0.05
t1
0.02
0.01
t2
10-2
* Notes :
1. ZθJC(t) = 0.39 0C/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
single pulse
10-3
10-5
10-4
10-2
10-1
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11-2. Transient Thermal Response Curve for FDPF51N25 / FDPF51N25YDTU
D=0.5
100
0.2
0.1
PDM
0.05
t1
10-1
t2
0.02
* Notes :
1. ZθJC(t) = 3.3 0C/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.01
single pulse
10-3
10-2
10-5
10-4
10-2
10-1
100
101
t1, Square Wave Pulse Duration [sec]
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
5
FDP51N25 / FDPF51N25 Rev. 1.8
VGS
Same Type
as DUT
50KΩ
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
I
= const.
G
Charge
Figure 12. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
V
VDS (t)
VDD
DUT
GS
t p
t p
Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
6
FDP51N25 / FDPF51N25 Rev. 1.8
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FDP51N25 / FDPF51N25 Rev. 1.8
7
10.36
9.96
2.66
2.42
B
B
A
3.28
3.08
7.00
0.70
3.40
3.20
6.88
6.48
1 X 45°
16.07
15.67
B
R1.00
2.96
2.56
1
3
1.47
1.24
8.50
7.50
B
R1.00
0.90
0.70
2.14
0.60
0.45
4.50
3.50
B
M
0.50
A
B
4.80
4.20
2.54
2.54
B
4.90
4.50
B
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B
DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. DRAWING FILE NAME: TO220N03REV2
10.36
9.96
2.66
2.42
A
B
B
3.28
3.08
3.40
3.20
7.00
0.70
6.88
6.48
1 X 45°
16.07
15.67
B
16.00
15.60
R0.30
2.96
2.56
3
1
R0.30
1.47
1.24
10.45
9.45
10.00
9.00
B
B
2.14
0.90
0.70
M
0.50
A
0.60
0.45
B
B
4.00 MIN
2.54
2.54
6.00
4.00
B
4.90
4.50
B
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B
DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. DRAWING FILE NAME: TO220Q03REV2
SUPPLIER "B" PACKAGE
SHAPE
ꢀꢁꢂꢂ
3.50
10.67
9.65
SUPPLIER "A" PACKAGE
SHAPE
E
3.40
2.50
16.30
13.90
IF PRESENT, SEE NOTE "D"
E
16.51
15.42
9.40
8.13
E
1
2
3
4.10
2.70
[2.46]
C
14.04
12.70
2.13
2.06
FRONT VIEWS
H
4.70
4.00
1.62
1.42
1.62
1.10
2.67
2.40
"A1"
8.65
7.59
1.00
0.55
SEE NOTE "F"
ꢃ
ꢄ
ꢃ
ꢄ
6.69
6.06
OPTIONAL
CHAMFER
E
14.30
11.50
NOTE "I"
BOTTOM VIEW
NOTES:
A) REFERENCE JEDEC, TO-220, VARIATION AB
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [ ].
D) LOCATION OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
3
2
1
E DOES NOT COMPLY JEDEC STANDARD VALUE.
F) "A1" DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 - 0.61
DUAL GAUGE = 1.10 - 1.45
G) DRAWING FILE NAME: TO220B03REV9
H
PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
0.60
0.36
2.85
2.10
BACK VIEW
SIDE VIEW
10.36
9.96
2.66
2.42
B
A
B
3.28
3.08
7.00
3.40
3.20
0.70
SEE NOTE "F"
SEE NOTE "F"
6.88
6.48
1 X 45°
16.07
15.67
B
16.00
15.60
B
(3.23)
3
1
1.47
1.24
2.96
2.56
2.14
0.90
0.70
0.50
10.05
9.45
M
A
30°
0.45
0.25
0.60
0.45
B
2.54
2.54
4.90
4.50
B
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B
DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. OPTION 1 - WITH SUPPORT PIN HOLE.
OPTION 2 - NO SUPPORT PIN HOLE.
G. DRAWING FILE NAME: TO220M03REV5
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
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