FDS2734 [ONSEMI]
N 沟道，UItraFET Trench® MOSFET，250V，3.0A，117mΩ;
| 型号： | FDS2734 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，UItraFET Trench® MOSFET，250V，3.0A，117mΩ 脉冲 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：483K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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August 2006
FDS2734
tm
N-Channel UItraFET Trench® MOSFET
250V, 3.0A, 117mΩ
Features
General Descriptions
This single N-Channel MOSFET is produced using
Fairchild Semiconductor’s advanced UItraFET Trench®
process that has been especially tailored to minimize
the on-state resistance and yet maintain superior switching
performance.
Max rDS(on) =117mΩ at VGS =10V, ID = 3.0A
Max rDS(on) =126mΩ at VGS = 6V, ID = 2.8A
Fast switching speed
High performance trench technology for extremely
low rDS(on)
Application
DC-DC conversion
High power and current handling capability
RoHS compliant
D
D
D
D
5
6
7
8
4
3
2
1
SO-8
G
S
S
S
Pin 1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
250
±20
3.0
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
V
V
(Note 1a)
ID
A
50
EAS
PD
Single Pulse Avalanche Energy
Power dissipation
(Note 3)
(Note 1a)
(Note 1b)
12.5
2.5
mJ
W
Power dissipation
1.0
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to 150
oC
Thermal Characteristics
RθJA
RθJA
RθJC
Thermal Resistance, Junction- to -Ambient
(Note 1a)
(Note 1b)
(Note 1)
50
125
25
Thermal Resistance, Junction- to- Ambient
Thermal Resistance, Junction -to- Case
oC/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13’’
Tape Width
12mm
Quantity
FDS2734
FDS2734
SO-8
2500 units
©2006 Fairchild Semiconductor Corporation
FDS2734 Rev. B
1
www.fairchildsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
250
V
∆BVDSS
∆ TJ
Breakdown Voltage Temperature
Coefficient
I
D = 250µA, referenced to 25oC
157
mV/oC
V
DS = 200V,VGS=0 V
1
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
µA
10
VDS = 200V, VGS = 0V TJ = 55oC
VGS = ±20V, VDS =0 V
±100
nA
On Characteristics (Note 2)
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
2
3
4
V
∆VGS(th)
∆ TJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
D = 250µA, referenced to 25oC
-10.7
mV/c
V
GS = 10V, ID = 3.0A,
97
117
126
225
rDS(on)
Drain to Source On Resistance
Forward Transconductance
VGS = 6V , ID = 2.8A,
VGS = 10V, ID = 3.0A, TJ = 125oC
101
205
15.1
mΩ
gFS
VDS=10V, ID =3.0A,
S
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
1960 2610
pF
pF
pF
Ω
VDS = 100V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
85
26
130
40
f = 1MHz
0.7
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
23
11
40
11
32
9
37
19
64
19
45
ns
ns
V
DD = 125V, ID = 3A
VGS = 10V, RGS = 6Ω
Turn-Off Delay Time
Fall Time
ns
ns
Qg
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain Charge
nC
nC
nC
VDS = 125V, VGS = 10V
Qgs
Qgd
ID = 3.0A
8
Drain-Source Diode Characteristics
VSD
trr
Source to Drain Diode Voltage
Reverse Recovery Time
ISD = 3.0A
0.74
72
1.2
108
278
V
ns
nC
IF = 3.0 A, diF/dt = 100A/µs
Qrr
Reverse Recovery Charge
185
Notes:
1: R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
θJA
drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
θJC
θCA
b) 125°C/W when
mounted on a minimum
pad of 2 oz copper
a) 50°C/W when
mounted on a 1in
pad of 2 oz copper
2
Scale 1 : 1 on letter size paper
2: Pulse Test Width <300µs, Duty Cycle <2%.
3: Starting T = 25°C, L = 1mH, I = 5A, V = 100V, V = 10V
J
AS
DD
GS
2
www.fairchildsemi.com
FDS2734 Rev. B
Typical Characteristics TJ = 25°C unless otherwise noted
50
40
30
20
10
0
2.5
2.0
1.5
1.0
0.5
V
- Descending Order
= 10V
GS
VGS = 5V
V
GS
VGS = 4.5V
8V
6V
5V
VGS = 6V
VGS = 10V
VGS = 8V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
0
2
DS
4
6
8
10
0
10
20
30
40
50
V
, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT(A)
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance vs Drain
Current and Gate Voltage
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.4
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
ID =3A
I
= 3.0A
D
V
= 10V
GS
0.3
0.2
0.1
0.0
TJ = 150oC
TJ = 25oC
-50 -25
0
25
50
75
100 125 150
3
4
5
6
7
8
9
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance vs Junction
Temperature
Figure 4. On-Resistance vs Gate to Source
Voltage
20
100
V
GS
= 0V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
15
10
T = 150oC
J
10
1
TJ = 150oC
TJ = 25oC
T
J
= 25oC
T
= -55oC
J
5
TJ = -55oC
0
0.1
0.0
2
3
4
5
6
0.2
V , BODY DIODE FORWARD VOLTAGE (V)
SD
0.4
0.6
0.8
1.0
1.2
1.4
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage
vs Source Current
3
www.fairchildsemi.com
FDS2734 Rev. B
Typical Characteristics TJ = 25°C unless otherwise noted
10
8
5000
1000
Ciss
f = 1MHz
VGS = 0V
Coss
V
DD
= 50V
V
DD
= 125V
6
V
DD
= 200V
Crss
4
100
10
2
0
0.1
1
10
100
0
10
20
30
40
VDS,DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE(nC)
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
10
3.5
3.0
VGS = 10V
2.5
T
J
= 25oC
2.0
1
VGS = 6V
1.5
= 125oC
1.0
0.5
T
J
R
θJA = 50oC/W
0.1
1E-3
0.0
25
0.01
0.1
1
10
100
50
75
100
125
150
TA, AMBIENT TEMPERATURE(oC)
tAV, TIME IN AVALANCHE (mS)
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain Current vs
Ambient Temperature
102
104
TA = 25oC
10us
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
101
103
CURRENT AS FOLLOWS:
150 – T
A
I = I25
-----------------------
100
125
1ms
102
101
100
VGS = 10V
10ms
10-1
100ms
1s
10-2
DC
SINGLE PULSE
TJ = MAX RATED
TA = 25oC
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
SINGLE PULSE
10-3
10-1
100
101
102
103
10-3
10-2
10-1
100
101
102
103
VDS, DRAIN TO SOURCE VOLTAGE (V)
t, PULSE WIDTH (s)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
4
www.fairchildsemi.com
FDS2734 Rev. B
Typical Characteristics TJ = 25°C unless otherwise noted
4
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.01
1E-3
1E-4
1E-5
0.1
0.05
0.02
0.01
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
10-3
10-4
10-2
10-1
100
101
102
103
t, RECTANGULAR PULSE DURATION(s)
Figure 13. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b
Transient thermal response will change depending on the circuit board design
5
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FDS2734 Rev. B
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Rev. I20
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designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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