FDS4465 [ONSEMI]
P 沟道，1.8V 指定，PowerTrench® MOSFET，-20V，-13.5A，8.5mΩ;
| 型号： | FDS4465 |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，1.8V 指定，PowerTrench® MOSFET，-20V，-13.5A，8.5mΩ PC 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：246K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – P-Channel,
POWERTRENCH)
V
R
MAX
I
D MAX
DSS
DS(on)
−20 V
−13.5 A
8.5 mW @ −4.5 V
10.5 mW @ −2.5 V
14 mW @ −1.8 V
1.8 V Specified
FDS4465, FDS4465-G
Description
P−Channel
This P−Channel 1.8 V specified MOSFET is a rugged gate version
of onsemi’s advanced POWERTRENCH process. It has been
optimized for power management applications with a wide range of
gate drive voltage (1.8 V–8 V).
5
6
7
8
4
3
2
1
Features
• –13.5 A, –20 V
♦ R
♦ R
♦ R
= 8.5 mΩ @ V = –4.5 V
DS(on)
DS(on)
DS(on)
GS
= 10.5 mΩ @ V = –2.5 V
= 14 mΩ @ V = –1.8 V
GS
GS
D
D
D
• Fast Switching Speed
D
• High Performance Trench Technology for Extremely Low R
• High Current and Power Handling Capability
DS(on)
G
S
S
S
Applications
Pin 1
• Power Management
• Load Switch
SOIC8
CASE 751EB
• Battery Protection
MARKING DIAGRAM
Specifications
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
FDS4465
ALYW
Symbol
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Value
−20
8
Unit
V
V
DSS
GSS
V
V
I
Drain Current
Continuous (Note 1a)
−13.5
−50
2.5
A
D
Pulsed
FDS4465 = Specific Device Code
P
Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
W
D
A
= Assembly Site
1.5
L
YW
= Wafer Lot Number
= Assembly Start Week
1.2
T , T
Operating and Storage Junction
Temperature Range
−55 to +175 °C
J
STG
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
R
Thermal Resistance,
Junction−to−Ambient (Note 1a)
50
_C/W
q
JA
R
Thermal Resistance,
125
25
_C/W
_C/W
q
JA
Junction−to−Ambient (Note 1c)
R
Thermal Resistance,
Junction−to−Ambient (Note 1)
q
JC
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
February, 2022 − Rev.5
FDS4465/D
FDS4465, FDS4465−G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain−Source Breakdown Voltage
V
I
= 0 V, I = 250 mA
−20
V
DSS
GS
D
DBV
DT
Breakdown Voltage Temperature
Coefficient
= −250 mA, Referenced to 25°C
−12
mV/°C
DSS
J
D
T = 25°C
J
T = 150°C
J
I
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
DS
V
GS
V
GS
= −16 V, V = 0 V
−1
mA
nA
nA
DSS
GSSF
GSSR
GS
I
= 8 V, V = 0 V
100
DS
I
= −8 V, V = 0 V
−100
DS
ON CHARACTERISTICS (Note 2)
V
Gate Threshold Voltage
V
I
= V , I = 250 mA
−0.4
−0.6
−1.5
V
GS(th)
DS
GS
D
DV
Gate Threshold Voltage Temperature
Coefficient
= −250 mA, Referenced to 25°C
3
mV/°C
GS(th)
D
DT
J
R
Static Drain−Source On−Resistance
V
GS
V
GS
V
GS
V
GS
V
GS
V
DS
= −4.5 V, I = −13.5 A
6.7
8.0
9.8
9.0
8.5
10.5
14
mW
DS(on)
D
= −2.5 V, I = −12 A
D
= −1.8 V, I = −10.5 A
D
= −4.5 V, I = −13.5 A T = 125°C
13
D
J
I
On–State Drain Current
= −4.5 V, V = −5 V
−50
A
S
D(on)
DS
g
FS
Forward Transconductance
= −5 V, I = −13.5 A
70
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= −10 V, V = 0 V, f = 1.0 MHz
8237
1497
750
pF
pF
pF
W
iss
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
0.1
3.0
6.0
g
SWITCHING CHARACTERISTICS (Note 2)
t
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
= −10 V, I = −1 A, V = −4.5 V,
GEN
20
24
36
38
ns
ns
d(on)
DD
D
GS
R
= 6 W
t
r
t
300
140
86
480
224
120
ns
d(off)
t
f
ns
Q
V
DS
= −10 V, I = −1 A, V = −4.5 V
nC
nC
nC
g
D
GS
Q
20
gs
gd
Q
11
DRAIN–SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward Voltage = 0 V, I = −2.1 A (Note 2)
I
−2.1
−1.2
A
V
S
V
SD
V
GS
−0.6
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
q
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
q
q
JC
CA
a) 50°C/W when mounted
b) 105°C/W when mounted
c) 125°C/W when mounted
on a minimum pad
2
2
on a 1 in pad of 2 oz
on a .04 in pad of 2 oz
copper
copper
Scale 1:1 on letter size paper
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2
FDS4465, FDS4465−G
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
TYPICAL CHARACTERISTICS
50
40
30
20
10
0
3
VGS = −4.5 V
−2.5 V
−2.0 V
2.6
−1.5 V
−1.8 V
2.2
VGS = −1.5 V
1.8
1.4
1
− 1.8 V
−2.0V
−2.5 V
−4.5 V
0.6
0.5
1
0
1.5
0
10
20
30
40
50
−VDS, DRAIN TO SOURCE VOLTAGE (V)
−I , DRAIN CURRENT (A)
D
Figure 1. On−Region Characteristics
Figure 2. On−Resistance Variation with
Drain Current and Gate Voltage
1.6
1.4
1.2
1
0.025
0.02
0.015
0.01
0.005
0
ID = −13.5 A
ID = −6.3 A
V
GS = −10 V
TA = 125oC
TA= 25oC
0.8
0.6
−50
−25
0
25
50
75
100
125
150
175
0
1
2
3
4
5
TJ, JUNCTION TEMPERATURE ( oC)
−VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
Temperature
50
40
30
20
10
0
100
VGS = 0V
V
DS = −5.0 V
10
1
TA = 125oC
25oC
0.1
o
−55C
TA = 125oC
0.01
0.001
0.0001
25oC
1.5
−55oC
0.5
1
0
2
0
0.2
0.4
0.6
0.8
1
1.5
−VGS, GATE TO SOURCE VOLTAGE (V)
−VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
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3
FDS4465, FDS4465−G
TYPICAL CHARACTERISTICS
5
4
3
2
1
0
10000
f = 1 MHz
VGS = 0 V
VDS = −5 V
ID = −13.5 A
CISS
−10 V
8000
6000
4000
2000
0
−15 V
COSS
CRSS
0
20
40
60
80
100
0
5
10
15
20
Qg, GATE CHARGE (nC)
−VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
100
10
50
40
30
20
10
0
100 s
1 ms
SINGLE PULSE
R
JA = 125°C/W
RDS(ON) LIMIT
10 ms
T
A = 25°C
100 ms
1 s
10 s
DC
1
VGS = −4.5 V
SINGLE PULSE
0.1
0.01
R
JA = 125oC/W
T
A = 2 5oC
0.1
1
10
100
0.001
0.01
0.1
1
10
100
−VDS, DRAIN−SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 10. Single Pulse Maximum Power
Dissipation
Figure 9. Maximum Safe Operating Area
1
D = 0.5
RqJA(t) = r(t) + Rq
JA
0.2
RqJA = 125oC/W
0.1
0.1
0.05
P(pk)
0.02
t1
0.01
t2
0.01
TJ −TA = P * RqJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on circuit board design.
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4
FDS4465, FDS4465−G
PACKAGE MARKING AND ORDERING INFORMATION
†
Device Marking
FDS4465
Device
FDS4465
Reel Size
13″
Tape Width
12 mm
Shipping
2500 / Tape & Reel
2500 / Tape & Reel
FDS4465
FDS4465−G
13″
12 mm
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries.
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC8
CASE 751EB
ISSUE A
DATE 24 AUG 2017
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13735G
SOIC8
PAGE 1 OF 1
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