FDS4501H [ONSEMI]
互补 PowerTrench® 半桥 MOSFET;型号: | FDS4501H |
厂家: | ONSEMI |
描述: | 互补 PowerTrench® 半桥 MOSFET 开关 光电二极管 晶体管 |
文件: | 总10页 (文件大小:1500K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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May 2001
FDS4501H
Complementary PowerTrenchÒ Half-Bridge MOSFET
General Description
Features
This complementary MOSFET half-bridge device is
produced using Fairchild’s advanced PowerTrench
process that has been especially tailored to minimize
the on-state resistance and yet maintain low gate
charge for superior switching performance.
·
Q1: N-Channel
9.3A, 30V
RDS(on) = 18 mW @ VGS = 10V
RDS(on) = 23 mW @ VGS = 4.5V
·
Q2: P-Channel
Applications
–5.6A, –20V
RDS(on) = 46 mW @ VGS = –4.5V
RDS(on) = 63 mW @ VGS = –2.5V
· DC/DC converter
· Power management
· Load switch
· Battery protection
Q2
D
5
6
4
3
2
1
D
D
D
Q1
7
8
SO-8
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Q1
Q2
Units
VDSS
VGSS
ID
Drain-Source Voltage
30
±20
9.3
20
–20
±8
V
V
A
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
–5.6
–20
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
2.5
W
1.2
1
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
RqJA
°C/W
°C/W
RqJC
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS4501H
FDS4501H
13”
12mm
2500 units
Ó2001 Fairchild Semiconductor Corporation
FDS4501H Rev C(W)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = –250 µA
ID = 250 µA, Referenced to 25°C
ID = –250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
Q1
Q2
Q1
Q2
Q1
Q2
30
–20
V
Voltage
Breakdown Voltage
Temperature Coefficient
24
–13
DBVDSS
DTJ
mV/°C
IDSS
Zero Gate Voltage Drain
Current
1
–1
mA
VDS = –16 V, VGS = 0 V
IGSS
Gate-Body Leakage
VGS = +20 V, VDS = 0 V
VGS = +8 V, VDS = 0 V
Q1
Q2
+100
+100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
VDS = VGS, ID = –250 µA
ID = 250 µA, Referenced to 25°C
ID = –250 µA, Referenced to 25°C
VGS = 10 V, ID = 9.3 A
Q1
Q2
Q1
Q2
1
1.6
3
V
–0.4 –0.7 –1.5
Gate Threshold Voltage
Temperature Coefficient
–4
3
14
21
17
DVGS(th)
DTJ
mV/°C
mW
RDS(on)
Static Drain-Source
On-Resistance
Q1
18
29
23
VGS = 10 V, ID = 9.3 A, TJ = 125°C
VGS = 4.5 V, ID = 7.6 A
Q2
36
49
47
46
80
63
VGS = –4.5 V, ID = –5.6 A
VGS = –4.5 V, ID = –5.6 A, TJ = 125°C
VGS = –2.5 V, ID = –5.0 A
VGS = 10 V, VDS = 5 V
ID(on)
gFS
On-State Drain Current
Q1
Q2
Q1
Q2
20
–20
A
S
VGS = –4.5 V, VDS = –5 V
Forward Transconductance VDS = 5 V, ID = 9.3 A
VDS = 5 V, ID = –5.6 A
28
16
Dynamic Characteristics
C
iss
Input Capacitance
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
Q1
Q2
Q1
Q2
Q1
Q2
1958
1312
424
240
182
106
pF
pF
pF
Coss
Output Capacitance
C
rss
Reverse Transfer Capacitance
FDS4501H Rev C(W)
Electrical Characteristics (continued)
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q1
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
15
15
5
27
27
10
27
61
64
20
40
27
21
ns
ns
VDD = 15 V, ID = 1 A,
VGS = 10V, RGEN = 6 W
Q1
VDD = –10 V, ID = –1 A,
VGS = –4.5V, RGEN = 6 W
15
38
40
10
25
17
13
4
ns
ns
Qg
Q1
nC
nC
nC
VDS = 15 V, ID = 9.3 A, VGS = 4.5 V
Qgs
Qgd
Q2
2.5
5
2.0
VDS = 15 V, ID = –2.4 A,VGS = –4.5 V
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Q1
Q2
Q1
Q2
2.1
–2.1
1.2
–1.2
A
V
VSD
Drain-Source Diode Forward VGS = 0 V, IS = 2.1 A (Note 2)
Voltage
VGS = 0 V, IS = –2.1 A (Note 2)
Notes:
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RqJC is guaranteed by design while RqCA is determined by the user's board design.
a) 50°C/W when
mounted on a
1 in pad of 2 oz
b) 105°C/W when
mounted on a 0.04
in2 pad of 2 oz
copper
c) 125°C/W when mounted on a
minimum pad.
2
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%
FDS4501H Rev C(W)
Typical Characteristics: Q2
4
3.5
3
15
VGS = -4.5V
-2.5V
-3.0V
12
VGS = -1.5V
-2.0V
9
2.5
2
-1.8V
-1.8V
6
-2.0V
1.5
1
-2.5V
-3.0V
3
0
-1.5V
-4.5V
0.5
0
3
6
9
12
15
0
0.5
1
1.5
2
2.5
150
3
-ID, DRAIN CURRENT (A)
-VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.14
0.12
0.1
1.5
1.4
ID = -1.2 A
ID = -2.4A
VGS = -4.5V
1.3
1.2
1.1
1
0.08
0.06
0.04
0.02
TA = 125oC
0.9
0.8
0.7
TA = 25oC
-50
-25
0
25
50
75
100
125
1
2
3
4
5
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
15
12
9
VGS = 0V
VDS = - 5V
TA = 125oC
25oC
10
1
-55oC
TA = 125oC
25oC
0.1
6
-55oC
0.01
0.001
3
0.0001
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
0.5
1
1.5
2
2.5
-V SD, BODY DIODE FORWARD VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4501H Rev C(W)
Typical Characteristics: Q2
5
2000
1600
1200
800
400
0
f = 1MHz
VDS = -5V
ID = -2.4A
VGS = 0 V
-10V
4
3
2
1
0
CISS
-15V
COSS
CRSS
0
2
4
6
8
10
12
14
0
5
10
15
20
Qg, GATE CHARGE (nC)
-VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
20
15
10
5
SINGLE PULSE
RqJA = 125°C/W
TA = 25°C
RDS(ON) LIMIT
1ms
10ms
100ms
1s
1
10s
DC
VGS =-4.5V
SINGLE PULSE
RqJA = 125oC/W
TA = 25oC
0.1
0.01
0
0.1
1
10
100
0.01
0.1
1
10
100
1000
-VDS , DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
FDS4501H Rev C(W)
Typical Characteristics: Q1
21
4
3.5
3
VGS = 10.0V
3.5V
18
6.0V
3.0V
4.5V
15
VGS = 2.5V
12
9
2.5
2
3.0V
6
2.5V
1.5
1
3.5V
4.5V
3
0
6.0V
20
10V
0.5
0
0.5
1
1.5
2
0
5
10
15
25
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DIRAIN CURRENT (A)
Figure 11. On-Region Characteristics.
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.4
1.2
1
0.08
ID = 9.3A
VGS = 10V
ID = 4.7A
0.06
0.04
0.02
0
TA = 125oC
0.8
0.6
TA = 25oC
-50
-25
0
25
50
75
100
125
150
2
2.5
3
3.5
4
4.5
5
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 13. On-Resistance Variation with
Temperature.
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
25
20
15
10
5
100
TA = -55oC
VGS = 0V
25oC
125oC
VDS = 5.0V
10
TA = 125oC
1
25oC
0.1
-55o
C
0.01
0.001
0
0.0001
1
1.5
2
2.5
3
3.5
0
0.2
0.4
0.6
0.8
1
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 15. Transfer Characteristics.
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4501H Rev C(W)
Typical Characteristics Q1
3000
2500
2000
1500
1000
500
10
f = 1 MHz
VGS = 0 V
ID = 9.3A
VDS = 5V
10
8
6
4
2
0
15V
CISS
COSS
CRSS
0
0
5
10
15
20
25
30
0
5
10
15
20
Qg, GATE CHARGE (nC)
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 17. Gate Charge Characteristics.
Figure 18. Capacitance Characteristics.
30
25
20
15
10
5
100
10
SINGLE PULSE
m
RqJA = 125°C/W
100
1ms
s
TA = 25°C
RDS(ON) LIMIT
10ms
100ms
1s
1
10s
DC
VGS = 10V
SINGLE PULSE
RqJA = 125oC/W
TA = 25oC
0.1
0.01
0
0.01
0.1
1
10
100
0.01
0.1
1
10
VDS , DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 19. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
q
q
R
JA(t) = r(t) + R JA
0.2
o
q
0.1
R JA= 125 C/W
0.1
0.05
0.02
t1
0.01
0.01
t2
SINGLE PULSE
q
TJ - TA = P * R JA(t)
Duty Cycle, D = t1/ t2
100 1000
0.001
0.0001
0.001
0.01
0.1
1
10
t1, TIME (sec)
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS4501H Rev C(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
OPTOPLANAR™
PACMAN™
POP™
PowerTrench
QFET™
QS™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
Stealth™
UltraFET
VCX™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
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DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H2
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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