FDS4685-NF074 [ONSEMI]

40V，P 沟道，PowerTrench® MOSFET，-8.2A，27mΩ;


型号：	FDS4685-NF074
厂家：	ONSEMI
描述：	40V，P 沟道，PowerTrench® MOSFET，-8.2A，27mΩ
文件：	总6页 (文件大小：682K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or

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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application

by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized

for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for

implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,

subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative

Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.

FDS4685

40V P-Channel PowerTrench^®MOSFET

Applications

Features

■ Power management

■ –8.2 A, –40 V R

= 0.027 Ω @ V = –10 V

DS(ON)

■ Load switch

= 0.035 Ω @ V = –4.5 V

■ Battery protection

■ Fast switching speed

■ High performance trench technology for extremely low

General Description

DS(ON)

■ High power and current handling capability

This P-Channel MOSFET is a rugged gate version of ON

Semiconductor’s advanced PowerTrench process. It has been

optimized for power management applications requiring a wide

range of gate drive voltage ratings (4.5V – 20V).

SO-8

Pin 1

Absolute Maximum Ratings T = 25°C unless otherwise noted

Symbol

Parameter

Ratings

Units

Drain-Source Voltage

Gate-Source Voltage

–40

DSS

GSS

Drain Current

- Continuous

- Pulsed

(Note 1a)

–8.2

–50

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

2.5

1.4

1.2

T , T

Operating and Storage Junction Temperature Range

–55 to +150

°C

STG

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1c)

(Note 1)

125

°C/W

θJA

θJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS4685

13”

12mm

2500 units

October-2017, Rev. 3

Publication Order Number:

FDS4685/D

Electrical Characteristics T = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

Drain–Source Breakdown Voltage

= 0 V, I = –250 µA

–40

DSS

∆BVDSS

∆T

Breakdown Voltage Temperature

Coefﬁcient

= –250 µA, Referenced to 25°C

–32

mV/°C

Zero Gate Voltage Drain Current

Gate–Body Leakage

= –32 V, V = 0 V

–1

µA

DSS

20 V, V = 0 V

100

GSS

On Characteristics (Note 2)

Gate Threshold Voltage

= V , I = –250 µA

–1

–1.6

4.7

–3

GS(th)

∆VGS(th)

Gate Threshold Voltage

Temperature Coefﬁcient

= –250 µA, Referenced to 25°C

mV/°C

∆T

Static Drain–Source

On–Resistance

= –10 V, I = –8.2 A

mΩ

DS(on)

= –4.5 V, I = –7 A

= –10 V, I = –8.2 A, T = 125°C

Forward Transconductance

= –5 V, I = –8.2 A

Dynamic Characteristics

Input Capacitance

= –20 V, V = 0 V,

1872

256

134

Ω

iss

oss

rss

f = 1.0 MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

= 15 mV, f = 1MHz

Switching Characteristics (Note 2)

Turn–On Delay Time

Turn–On Rise Time

Turn–Off Delay Time

Turn–Off Fall Time

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

= –20 V, I = –1 A,

5.6

6.1

d(on)

= –10 V, R

= 6 Ω

GEN

d(off)

= –20 V, I = –8.2 A,

= –5 V

Drain–Source Diode Characteristics

Drain–Source Diode Forward Voltage

Diode Reverse Recovery Time

Diode Reverse Recovery Charge

= 0 V, I = –2.1 A (Note 2)

–0.7

–1.2

= –8.2 A,

d /d = 100 A/µs

Notes:

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is deﬁned as the solder mounting surface of the drain pins.

θJA

θJC

is guaranteed by design while R

is determined by the user's board design..

θCA

a) 50°C/W when mounted

on a 1 in pad of 2 oz

b) 105°/W when mounted

on a .04 in pad of 2 oz

c) 125°/W when mounted

on a minimum pad.

copper

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

www.onsemi.com

Typical Characteristics:

2.4

2.2

V_GS= -10V

-6.0V

-4.5V

-4.0V

V_GS= - 3.5V

1.8

1.6

1.4

1.2

-3.5V

-4.0V

-4.5V

-5.0V

-6.0V

-3.0V

-8.0V

-10V

0.8

0.5

1.5

2.5

3.5

4.5

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

-I_D, DRAIN CURRENT (A)

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

Figure 1. On-Region Characteristics.

1.8

1.6

1.4

1.2

0.09

0.08

0.07

0.06

0.05

0.04

0.03

0.02

0.01

I_D= -4.1A

I_D= -8.2A

_GS= - 10V

T_A= 125°C

T_A= 25°C

0.8

0.6

-50

-25

100

125

150

-V_GS, GATE TO SOURCE VOLTAGE (V)

T_J, JUNCTION TEMPERATURE (°C)

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

V_DS= -5V

V_GS= 0V

T_A= -55°C

25°C

T_A= 125°C

25°C

125°C

0.1

-55°C

0.01

0.001

0.0001

1.5

2.5

3.5

4.5

0.2

-V_SD

0.4

0.6

0.8

1.2

-V_GS, GATE TO SOURCE VOLTAGE (V)

BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

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Typical Characteristics:

2500

2000

1500

1000

500

f = 1 MHz

_GS= 0 V

V_DS= -10V

I_D= -8.2A

C_ISS

-20V

-30V

C_OSS

C_RSS

Q_g, GATE CHARGE (nC)

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 8. Capacitance Characteristics.

Figure 7. Gate Charge Characteristics.

100

R_DS(ON)LIMIT

100µs

1ms

SINGLE PULSE

R_θ_JA= 125°C/W

T_A= 25°C

10ms

100ms

10s

V_GS= -10V

0.1

SINGLE PULSE

R_θ_JA= 125°C/W

T_A= 25°C

0.01

0.1

100

0.001

0.01

0.1

100

1000

t₁, TIME (sec)

-V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

0.1

D = 0.5

R_θJA(t) = r(t) * R_{θ JA}

0.2

R_θJA= 125°C/W

0.1

0.05

P(pk)

0.02

0.01

t₁

t₂

0.01

T_J- T_A= P * R_θJA(t)

Duty Cycle, D = t₁/ t₂

SINGLE PULSE

0.001

0.0001

0.001

0.01

0.1

100

1000

t₁, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.

www.onsemi.com

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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FDS4685-NF074 [ONSEMI]

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