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October 2008

FDS4897AC

Dual N & P-Channel PowerTrench^®MOSFET

N-Channel: 40 V, 6.1 A, 26 mΩ P-Channel: -40 V, -5.2 A, 39 mΩ

Features

General Description

Q1: N-Channel

These dual N- and P-Channel MOSFETs are produced using

Fairchild Semiconductor's advanced PowerTrench^®process

that has been especially tailored to minimize on-state resistance

and yet maintain superior switching performance.

Max r_DS(on)= 26 mΩ at V_GS= 10 V, I_D= 6.1 A

Max r_DS(on)= 31 mΩ at V_GS= 4.5 V, I_D= 5.6 A

Q2: P-Channel

Max r_DS(on)= 39 mΩ at V_GS= -10 V, I_D= -5.2 A

Applications

Inverter

Max r_DS(on)= 65 mΩ at V_GS= -4.5 V, I_D= -4.1 A

100% UIL Tested

Power Supplies

RoHS Compliant

D2

Q2

D2

G2

S2

D2

5

6

4

3

2

1

D1

Q1

G2

G1

S1

D1

7

8

S2

G1

S1

Pin 1

SO-8

MOSFET Maximum Ratings T_A= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Q1

40

Q2

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current - Continuous

- Pulsed

-40

±20

-5.2

-24

V

±20

6.1

24

I_D

A

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

2.0

1.6

0.9

P_D

T_A= 25 °C (Note 1a)

T_A= 25 °C (Note 1b)

(Note 3)

W

E_AS

Single Pulse Avalanche Energy

37

73

mJ

°C

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

Thermal Characteristics

R_θJC

Thermal Resistance, Junction to Case,

Thermal Resistance, Junction to Ambient,

(Note 1)

40

78

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

12 mm

Quantity

FDS4897AC

SO-8

13 ”

2500 units

FDS4897AC Rev.C

1

www.fairchildsemi.com

Electrical Characteristics T_J= 25 °C unless otherwise noted

Symbol

Parameter

Test Conditions

Type

Min

Typ

Max Units

Off Characteristics

I

_D= 250 µA, V_GS= 0 V

_D= -250 µA, V_GS= 0 V

Q1

Q2

40

-40

BV_DSS

Drain to Source Breakdown Voltage

V

∆BV_DSS

∆T_J

Breakdown Voltage Temperature

Coefficient

I_D= 250 µA, referenced to 25 °C

_D= -250 µA, referenced to 25 °C

Q1

Q2

37

-32

mV/°C

I

V

_DS= 32 V, V_GS= 0 V

_DS= -32 V, V_GS= 0 V

Q1

Q2

1

I_DSS

I_GSS

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

µA

-1

Q1

Q2

±100

nA

V_GS= ±20 V, V_DS= 0 V

On Characteristics

V

_GS= V_DS, I_D= 250 µA

_GS= V_DS, I_D= -250 µA

Q1

Q2

1.5

-1.5

2.0

-2.0

3.0

-3.0

V_GS(th)

Gate to Source Threshold Voltage

V

∆V_GS(th)

∆T_J

Gate to Source Threshold Voltage

Temperature Coefficient

I_D= 250 µA, referenced to 25 °C

_D= -250 µA, referenced to 25 °C

V_GS= 10 V, I_D= 6.1 A

Q1

Q2

-6

6

mV/°C

I

20

24

30

26

31

39

V

_GS= 4.5 V, I_D= 5.6 A

_GS= 10 V, I_D= 6.1 A, T_J= 125 °C

Q1

Q2

r_DS(on)

Static Drain to Source On Resistance

mΩ

V

_GS= -10 V, I_D= -5.2 A

_GS= -4.5 V, I_D= -4.1 A

_GS= -10 V, I_D= -5.2 A, T_J= 125 °C

28

45

41

39

65

57

V

_DD= 5 V, I_D= 6.1 A

_DD= -5 V, I_D= -5.2 A

Q1

Q2

24

14

g_FS

Forward Transconductance

S

Dynamic Characteristics

Q1

Q2

795

765

1055

1015

Q1

C_iss

C_oss

C_rss

R_g

Input Capacitance

pF

Ω

V_DS= 20 V, V_GS= 0 V, f = 1 MHZ

Q1

Q2

95

135

130

180

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Q2

V_DS= -20 V, V_GS= 0 V, f = 1 MHZ

Q1

Q2

65

80

100

120

Q1

Q2

1.7

3.6

Switching Characteristics

Q1

Q2

6

8

12

15

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Rise Time

ns

Q1

V

_DD= 20 V, I_D= 6.1 A,

_GS= 10 V, R_GEN= 6 Ω

Q1

Q2

2

3

10

Q1

Q2

17

30

Q2

Turn-Off Delay Time

Fall Time

ns

V_DD= -20 V, I_D= -5.2 A,

Q1

Q2

2

3

10

V

_GS= -10 V, R_GEN= 6 Ω

ns

Q1

Q2

15

21

20

Q_g(TOT)

Q_gs

Q_gd

Total Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

nC

Q1

V

_GS= 10 V, V_DD= 20 V, I_D= 6.1 A

Q1

Q2

2.5

2.6

Q2

Q1

Q2

2.9

3.2

V_GS= -10 V, V_DD= -20 V, I_D= -5.2 A

FDS4897AC Rev.C

2

www.fairchildsemi.com

Electrical Characteristics T_J= 25 °C unless otherwise noted

Symbol

Parameter

Test Conditions

Type

Min

Typ

Max Units

Drain-Source Diode Characteristics

V

_GS= 0 V, I_S= 1.3 A

_GS= 0 V, I_S= -1.3 A

(Note 2) Q1

(Note 2) Q2

0.75

-0.76

1.2

V

V_SD

t_rr

Source to Drain Diode Forward Voltage

Reverse Recovery Time

-1.2

Q1

Q2

17

20

31

ns

36

Q1

I_F= 6.1 A, di/dt = 100 A/s

Q2

I_F= -5.2 A, di/dt = 100 A/s

Q1

Q2

7

10

15

nC

20

Q_rr

Reverse Recovery Charge

Notes:

2

1:

R

is determined with the device mounted on a 1in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

is guaranteed by design while R

is determined by

θJA

θJC

θCA

the user's board design.

a) 78 °C/W when

mounted on a 1 in

pad of 2 oz copper

b) 135 °C/W when

mounted on a

minimun pad

2

2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.

3: Starting T = 25 °C, N-ch: L = 3 mH, I = 5 A, V = 40 V, V = 10 V; P-ch: L = 3 mH, I = -7 A, V = -40 V, V = -10 V.

J

AS

DD

GS

AS

DD

GS

FDS4897AC Rev.C

3

www.fairchildsemi.com

Typical Characteristics (Q1 N-Channel) T_J= 25 °C unless otherwise noted

24

20

16

12

8

5

4

3

2

V_GS= 10 V

V_GS= 4.5 V

V_GS= 4 V

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5% MAX

V_GS= 3 V

V_GS= 3.5 V

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5% MAX

V_GS= 4.5 V

V_GS= 4 V

4

V_GS= 3 V

1

V_GS= 10 V

20 24

0

0.0

0.5

1.0

1.5

2.0

0

4

8

12

16

V_DSDRAIN TO SOURCE VOLTAGE (V)

,

I_D, DRAIN CURRENT (A)

Figure 1. On Region Characteristics

Figure2. N o r m a l i z e d O n - R e s i s ta n c e

vs Drain Current and Gate Voltage

1.8

1.6

1.4

1.2

1.0

0.8

0.6

80

I_D= 6.1 A

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5% MAX

V_GS= 10 V

70

60

50

40

30

20

10

I_D= 6.1 A

T_J= 125 ^o

C

T_J= 25 ^oC

6

-75 -50 -25

0

25 50 75 100 125 150

^oC

2

4

8

10

V_GS, GATE TO SOURCE VOLTAGE (V)

T_JJUNCTION TEMPERATURE

,

(

)

Figure 3. Normalized On Resistance

vs Junction Temperature

Figure4. On-Resistance vs Gate to

Source Voltage

24

20

16

12

8

40

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5% MAX

V_GS= 0 V

10

V_DS= 5 V

T_J= 150 ^o

C

1

T_J= 25 ^oC

T_J= 150 ^oC

T_J= 25 ^oC

0.1

T_J= -55 ^oC

T_J= -55 ^o

C

0.01

0.001

4

0

1

2

3

4

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V_GS, GATE TO SOURCE VOLTAGE (V)

V_SD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure6. Source to Drain Diode

Forward Voltage vs Source Current

FDS4897AC Rev.C

4

www.fairchildsemi.com

Typical Characteristics (Q1 N-Channel) T_J= 25 °C unless otherwise noted

10

8

2000

1000

I_D= 6.1 A

C_iss

V_DD= 15 V

6

V_DD= 25 V

C_oss

V_DD= 20 V

100

4

C_rss

2

f = 1 MHz

= 0 V

V

GS

0

10

0.1

0

4

8

Q , GATE CHARGE (nC)

12

16

1

10

40

V_DS, DRAIN TO SOURCE VOLTAGE (V)

g

Figure 7. Gate Charge Characteristics

Figure8. C a p a c i t a n c e v s D r a i n

to Source Voltage

10

7

6

5

4

3

2

1

0

9

8

7

6

5

V_GS= 10 V

4

3

V_GS= 4.5 V

T_J= 25 ^o

C

T_J= 125 ^oC

2

R_θJA= 78 ^oC/W

1

0.01

25

50

T_C

75

100

125

^oC

150

0.1

1

10 20

t_AV, TIME IN AVALANCHE (ms)

,

AMBIENT TEMPERATURE

(

)

Figure9. U n c l a m p e d I n d u c t i v e

Switching Capability

Figure10. Maximum Continuous Drain

Current vs Ambient Temperature

30

10

1000

V_GS= 10 V

100 us

SINGLE PULSE

R_θ_JA= 135 ^oC/W

_A= 25 ^oC

100

10

1 ms

1

T

10 ms

100 ms

THIS AREA IS

LIMITED BY r_DS(on)

SINGLE PULSE

T_J= MAX RATED

R_θ_JA= 135 ^oC/W

T_A= 25 ^oC

0.1

1 s

10 s

DC

1

0.01

0.5

10^-4

10^-3

10^-2

t, PULSE WIDTH (sec)

10^-1

1

10

200

0.1

1

10

100

100 1000

V_DS, DRAIN to SOURCE VOLTAGE (V)

Figure 11. Forward Bias Safe

Operating Area

Figure12. Single Pulse Maximum

Power Dissipation

FDS4897AC Rev.C

5

www.fairchildsemi.com

Typical Characteristics (Q1 N-Channel) T_J= 25 °C unless otherwise noted

2

1

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

P

DM

t

1

0.01

0.001

t

SINGLE PULSE

R_θ_JA= 135 ^oC/W

2

NOTES:

DUTY FACTOR: D = t /t

1

2

(Note 1b)

PEAK T = P

J

x Z

x R

+ T

θJA A

DM

θJA

10^-4

10^-3

10^-2

10^-1

t, RECTANGULAR PULSE DURATION (sec)

1

10

100

1000

Figure 13. Junction-to-Ambient Transient Thermal Response Curve

FDS4897AC Rev.C

6

www.fairchildsemi.com

Typical Characteristics (Q2 P-Channel) T_J= 25 °C unless otherwise noted

24

20

16

12

8

5

4

3

2

V_GS= -10 V

V_GS= -5 V

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5% MAX

V_GS= -3.5 V

V_GS= -4 V

V_GS= -4.5 V

V_GS= -4 V

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5% MAX

V_GS= -4.5 V

V_GS= -3.5 V

V_GS= -5 V

4

1

V_GS= -10 V

0

0.0

0.5

-V_DS

1.0

1.5

2.0

2.5

3.0

0

4

8

12

16

20

24

,

DRAIN TO SOURCE VOLTAGE (V)

-I_D, DRAIN CURRENT (A)

Figure 15. On- Region Characteristics

Figure 16. Normalized on-Resistance vs Drain

Current and Gate Voltage

120

1.8

PULSE DURATION = 80

DUTY CYCLE = 0.5% MAX

µs

I_D= -5.2 A

_GS= -10 V

I_D= -5.2 A

V

1.6

1.4

1.2

1.0

0.8

0.6

100

80

60

40

20

T_J= 125 ^o

C

T_J= 25 ^o

C

2

4

6

8

10

-75 -50 -25

T_J

0

25 50 75 100 125 150

,

JUNCTION TEMPERATURE ( )

^oC

-V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 18. On-Resistance vs Gate to

Source Voltage

Figure 17. Normalized On-Resistance

vs Junction Temperature

24

20

16

12

8

40

PULSE DURATION = 80 µs

DUTY CYCLE = 0.5% MAX

V_GS= 0 V

10

V_DS= -5 V

T_J= 150 ^o

C

1

T_J= 25 ^o

C

T_J= 150 ^o

C

0.1

T_J= 25 ^o

C

T_J= -55 ^o

C

T_J= -55 ^o

C

0.01

0.001

4

0

1

2

3

4

5

0.0

0.2

0.4

0.6

0.8

1.0

1.2

-V_GS, GATE TO SOURCE VOLTAGE (V)

-V_SD, BODY DIODE FORWARD VOLTAGE (V)

Figure 19. Transfer Characteristics

Figure 20. Source to Drain Diode

Forward Voltage vs Source Current

FDS4897AC Rev.C

7

www.fairchildsemi.com

Typical Characteristics (Q2 P-Channel) T_J= 25 °C unless otherwise noted

10

8

2000

1000

I_D= -5.2 A

C_iss

C_oss

C_rss

V_DD= -15 V

6

V_DD= -20 V

V_DD= -25 V

100

4

2

f = 1 MHz

= 0 V

V

GS

0

10

0.1

0

4

8

12

16

1

10

40

Q_g, GATE CHARGE (nC)

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 22. Capacitance vs Drain

to Source Voltage

Figure 21. Gate Charge Characteristics

6

5

4

3

2

1

10

9

8

7

6

5

4

3

V_GS= -10 V

T_J= 25 ^o

C

V_GS= -4.5 V

2

T_J= 125 ^o

C

R_θJA= 78 ^oC/W

1

0.1

0

25

1

10

40

50

T_C

75

100

125

^oC

150

t_AV, TIME IN AVALANCHE (ms)

,

AMBIENT TEMPERATURE

(

)

Figure 23. Unclamped Inductive

Switching Capability

F ig ure 24 . Ma ximum C on tin uo us D rain

Current vs Ambient Temperature

1000

30

V_GS= -10 V

100 us

10

100

10

1 ms

SINGLE PULSE

R_θ_JA= 135 ^oC/W

THIS AREA IS

LIMITED BY r_ds(on)

1

10 ms

100 ms

SINGLE PULSE

0.1

0.01

1 s

T_J= MAX RATED

R_θJA= 135 ^oC/W

25 ^o

T_A= C

10 s

DC

1

0.5

10^-4

10^-3

10^-2

t, PULSE WIDTH (sec)

10^-1

1

10

100 1000

0.01

0.1

1

10

100 200

-V_DS, DRAIN to SOURCE VOLTAGE (V)

Figure 25. Forward Bias Safe

Operating Area

Figure 26. Single Pulse Maximum Power

Dissipation

FDS4897AC Rev.C

8

www.fairchildsemi.com

Typical Characteristics (Q2 P-Channel) T_J= 25 °C unless otherwise noted

2

1

0.1

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

P

0.05

0.02

0.01

DM

t

1

t

2

0.01

0.001

SINGLE PULSE

R_θ_JA= 135 ^oC/W

NOTES:

DUTY FACTOR: D = t /t

1

2

PEAK T = P

J

x Z

x R

+ T

θJA A

DM

θJA

(

Note 1b)

10^-4

10^-3

10^-2

10^-1

t, RECTANGULAR PULSE DURATION (sec)

1

10

100

1000

Figure 27. Junction-to-Ambient Transient Thermal Response Curve

FDS4897AC Rev.C

9

www.fairchildsemi.com

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intended to be an exhaustive list of all such trademarks.

®

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®

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®

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EcoSPARK

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ISOPLANAR™

MegaBuck™

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MicroFET™

MicroPak™

TINYOPTO™

TinyPower™

TinyPWM™

TinyWire™

µSerDes™

®

™

Saving our world, 1mW /W /kW at a time™

SmartMax™

EZSWITCH™ *

™

SMART START™

®

SPM

MillerDrive™

MotionMax™

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SupreMOS™

SyncFET™

®

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®

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OPTOLOGIC

®

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®

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FAST

®

tm

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FlashWriter

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®

*

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®

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RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY

PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE

EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain life,

and (c) whose failure to perform when properly used in accordance with

instructions for use provided in the labeling, can be reasonably

expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to cause

the failure of the life support device or system, or to affect its safety or

effectiveness.

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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their

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application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the

proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild

Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild

Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Farichild’s full range of

up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and

warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is

committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Datasheet contains the design specifications for product development. Specifications may

change in any manner without notice.

Advance Information

Formative / In Design

Datasheet contains preliminary data; supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make changes at any time without notice to

improve design.

Preliminary

First Production

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the design.

No Identification Needed

Obsolete

Full Production

Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.

Not In Production

Rev. I37

FDS4897AC Rev.C

10

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1


型号：	FDS4897AC
厂家：	ONSEMI
描述：	双 N 和 P 沟道，PowerTrench® MOSFET，40V PC 光电二极管
文件：	总12页 (文件大小：511K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FDS4897AC [ONSEMI]

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