FDS5351 [ONSEMI]
N 沟道,PowerTrench® MOSFET,60V,6.1A,35mΩ;![FDS5351](http://pdffile.icpdf.com/pdf2/p00366/img/icpdf/FDS5351_2239082_icpdf.jpg)
型号: | FDS5351 |
厂家: | ![]() |
描述: | N 沟道,PowerTrench® MOSFET,60V,6.1A,35mΩ PC 开关 脉冲 光电二极管 晶体管 |
文件: | 总8页 (文件大小:352K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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April 2008
FDS5351
N-Channel PowerTrench® MOSFET
60V, 6.1A, 35mΩ
Features
General Description
Max rDS(on) = 35mΩ at VGS = 10V, ID = 6.1A
Max rDS(on) = 42mΩ at VGS = 4.5V, ID = 5.5A
High performance trench technology for extremely low rDS(on)
100% UIL Tested
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
RoHS Compliant
Application
Inverter Switch
Synchronous Rectifier
Load Switch
D
D
G
S
S
S
4
3
2
1
5
D
D
D
D
D
D
6
7
8
G
SO-8
S
S
Pin 1
S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
60
V
V
±20
6.1
ID
A
mJ
W
30
EAS
PD
Single Pulse Avalanche Energy
Power Dissipation
(Note 3)
73
TA = 25°C
TA = 25°C
(Note 1a)
(Note 1b)
5
2.5
Power Dissipation
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
25
50
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
12mm
Quantity
2500units
FDS5351
FDS5351
SO-8
13’’
1
©2008 Fairchild Semiconductor Corporation
FDS5351 Rev.C
www.fairchildsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
60
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, referenced to 25°C
55
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 48V, VGS = 0V
VGS = ±20V, VDS = 0V
1
µA
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
1.0
2.0
3.0
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to 25°C
-6.2
mV/°C
VGS = 10V, ID = 6.1A
26.5
32.4
44.5
24
35.0
42.0
58.8
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
VGS = 4.5V, ID = 5.5A
mΩ
VGS = 10V, ID = 6.1A, TJ= 125°C
VDD = 5V, ID = 6.1A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
985
90
1310
120
75
pF
pF
pF
Ω
VDS = 30V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
50
f = 1MHz
1.7
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
8
3
16
10
34
10
27
13
ns
ns
VDD = 30V, ID = 6.1A,
VGS = 10V, RGEN = 6Ω
Turn-Off Delay Time
Fall Time
21
2
ns
ns
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0V to 10V
19
9
nC
nC
nC
nC
VDD = 30V,
ID = 6.1A
Qg
VGS = 0V to 4.5V
Qgs
Qgd
3
3.5
Drain-Source Diode Characteristics
VGS = 0V, IS = 6.1A
VGS = 0V, IS = 2.1A
(Note 2)
(Note 2)
0.82
0.76
24
1.3
1.2
38
VSD
Source to Drain Diode Forward Voltage
V
trr
Reverse Recovery Time
ns
IF = 6.1A, di/dt = 100A/µs
Qrr
Reverse Recovery Charge
15
27
nC
NOTES:
2
1. R
is determined with the device mounted on a 1in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R is determined by
θCA
θJA
θJC
the user's board design.
a) 50°C/W when mounted on a
1in pad of 2 oz copper.
b) 125°C/W when mounted on a
minimum pad.
2
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. UIL condition: Starting T = 25°C, L = 3mH, I = 7A, V = 60V, V = 10V.
J
AS
DD
GS
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FDS5351 Rev.C
2
Typical Characteristics TJ = 25°C unless otherwise noted
3.0
2.5
2.0
1.5
1.0
0.5
30
VGS = 10V
VGS = 3V
VGS = 4V
VGS = 3.5V
VGS = 4.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
20
VGS = 4V
VGS = 3.5V
10
VGS = 4.5V
VGS = 10V
VGS = 3V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
0
0
10
20
30
0
1
2
3
ID, DRAIN CURRENT(A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
100
2.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
ID = 6.1A
GS = 10V
ID = 6.1A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
80
60
40
20
0
TJ = 125oC
TJ = 25oC
2
4
6
8
10
-75 -50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure4. On-Resistance vs Gate to
Source Voltage
F i gu re 3 . N orma li zed On - Res is ta nc e
vs Junction Temperature
100
30
VGS = 0V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
10
1
VDS = 5V
20
TJ = 125oC
TJ = 25oC
TJ = 125oC
0.1
10
TJ = 25oC
TJ = -55oC
0.01
0.001
TJ = -55oC
0
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
Figure 5. Transfer Characteristics
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FDS5351 Rev.C
3
Typical Characteristics TJ = 25°C unless otherwise noted
10
4000
1000
ID = 6.1A
Ciss
8
VDD = 30V
6
Coss
VDD = 20V
VDD = 40V
4
2
0
100
10
Crss
f = 1MHz
= 0V
V
GS
0
4
8
12
16
20
0.1
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE(nC)
g
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
Figure 7. Gate Charge Characteristics
8
10
8
6
VGS = 10V
6
TJ = 25oC
VGS = 4.5V
4
4
TJ = 125oC
2
θJA = 50oC/W
2
R
0
25
1
0.01
0.1
1
10
30
50
75
100
125
150
TA, AMBIENT TEMPERATURE (oC)
tAV, TIME IN AVALANCHE(ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs Ambient Temperature
1000
100
10
VGS = 10V
SINGLE PULSE
RθJA = 125oC/W
100
10
T
A = 25oC
1ms
THIS AREA IS
1
10ms
LIMITED BY r
DS(on)
100ms
SINGLE PULSE
TJ = MAX RATED
RθJA = 125oC/W
0.1
1s
10s
DC
1
T
A = 25oC
0.5
0.01
10-4
10-3
10-2
t, PULSE WIDTH (sec)
10-1
1
10
300
100
100 1000
0.01
0.1
1
10
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure12. Single Pulse Maximum
Power Dissipation
Figure 11. Forward Bias Safe
Operating Area
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FDS5351 Rev.C
4
Typical Characteristics TJ = 25°C unless otherwise noted
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
P
0.05
0.02
0.01
DM
t
1
t
2
0.01
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
1
2
R
θJA = 125oC/W
PEAK T = P
J
x Z
x R
+ T
θJA A
DM
θJA
0.001
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 13. Transient Thermal Response Curve
www.fairchildsemi.com
©2008 Fairchild Semiconductor Corporation
FDS5351 Rev.C
5
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global
subsidianries, and is not intended to be an exhaustive list of all such trademarks.
ACEx®
FPS™
PDP-SPM™
The Power Franchise®
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
F-PFS™
Power-SPM™
PowerTrench®
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
GTO™
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
Saving our world 1mW at a time™ TinyPWM™
EZSWITCH™ *
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SuperMOS™
®
TinyWire™
µSerDes™
™
®
MicroPak™
Fairchild®
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
UHC®
Ultra FRFET™
UniFET™
VCX™
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
OPTOPLANAR®
VisualMax™
®
FastvCore™
tm
FlashWriter®
*
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
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As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
in the labeling, can be reasonably expected to result in a
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2. A critical component in any component of a life support,
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expected to cause the failure of the life support device or
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Advance Information
Formative or In Design
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
Preliminary
First Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
This datasheet contains specifications on a product that is discontinued by
Fairchild Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I34
©2008 Fairchild Semiconductor Corporation
FDS5351 Rev.C
www.fairchildsemi.com
6
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
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