FDS6675BZ [ONSEMI]
P 沟道，PowerTrench® MOSFET，-30V，-11A，13mΩ;
| 型号： | FDS6675BZ |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，PowerTrench® MOSFET，-30V，-11A，13mΩ |
| 文件： | 总7页 (文件大小：400K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FDS6675BZ
MOSFET – P-Channel,
POWERTRENCH)
-30 V, -11 A, 13 mW
Description
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This P−Channel MOSFET is produced using ON Semiconductor’s
advanced POWERTRENCH process that has been especially tailored
to minimize the on−state resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers and Portable
Battery Packs.
D
D
D
D
G
S
S
S
Pin 1
SOIC8
CASE 751EB
Features
• Max R
• Max R
= 13 mW at V = −10 V, I = −11 A
GS D
DS(on)
= 21.8 mW at V = −4.5 V, I = −9 A
DS(on)
GS
D
ELECTRICAL CONNECTION
• Extended V Range (−25 V) for Battery Applications
GS
• HBM ESD Protection Level of 5.4 kV Typical (Note 3)
• High Performance Trench Technology for Extremely Low R
• High Power and Current Handling Capability
D
D
D
D
5
6
7
8
4
3
2
1
G
S
S
S
DS(on)
• This Device is Pb−Free and RoHS Compliant
Specifications
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Ratings
−30
Unit
V
MARKING DIAGRAM
V
DS
V
GS
25
V
I
D
A
Drain Current
− Continuous (Note 1a)
− Pulsed
FDS6675BZ
ALYW
−11
−55
P
D
W
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
2.5
1.2
1.0
FDS4435BZ = Specific Device Code
A
= Assembly Site
L
YW
= Wafer Lot Number
= Assembly Start Week
T , T
Operating and Storage Junction
Temperature Range
−55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device
FDS6675BZ
Package
Shipping
†
THERMAL CHARACTERISTICS
SOIC8
(Pb−Free)
2,500 /
Tape & Reel
Symbol
Parameter
Ratings
25
Unit
Thermal Resistance, Junction to Case
°C/W
R
q
JC
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
R
Thermal Resistance, Junction to
Ambient (Note 1a)
50
q
JA
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
August, 2019 − Rev. 3
FDS6675BZ/D
FDS6675BZ
Table 1. ELECTRICAL CHARACTERISTICS (T = 25°C)
A
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
I
D
= −250 mA, V = 0 V
BV
Drain to Source Breakdown Voltage
−30
V
GS
DSS
I
= −250 mA, referenced to 25°C
−20
mV/°C
Breakdown Voltage Temperature
Coefficient
DBV
/
D
DSS
DT
J
DSS
GSS
mA
mA
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= −24 V, V = 0 V
−1
DS
GS
I
=
25 V, V = 0 V
10
GS
DS
ON CHARACTERISTICS
V
I
= V , I = −250 mA
DS D
V
Gate to Source Threshold Voltage
−1
−2
−3
V
GS
GS(th)
= −250 mA, referenced to 25°C
15.7
mV/°C
Gate to Source Threshold Voltage
Temperature Coefficient
DV
/
D
GS(th)
DT
J
Static Drain to Source On Resistance
mW
R
V
V
V
V
= −10 V, I = −11 A
10.8
17.4
15.0
34
13.0
21.8
18.8
DS(on)
GS
D
= −4.5 V, I = −9 A
GS
GS
DS
D
= −10 V, I = −11 A, T = 125°C
D
J
g
FS
Forward Transconductance
= −5 V, I = −11 A
S
D
DYNAMIC CHARACTERISTICS
V
DS
= −15 V, V = 0 V, f = 1 MHz
C
Input Capacitance
1855
335
2470
450
pF
pF
pF
GS
iss
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
330
500
rss
SWITCHING CHARACTERISTICS
V
= −15 V, I = −11 A, V = −10 V,
t
Turn−On Delay Time
Rise Time
3.0
7.8
120
60
10
16
ns
ns
DD
GS
D
GS
d(on)
R
= 6 W
t
r
t
Turn−Off Delay Time
Fall Time
200
100
62
ns
d(off)
t
f
ns
Q
Q
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V
V
= −15 V, V = −10 V, I = −11 A
44
nC
nC
nC
nC
g
g
DS
GS
D
= −15 V, V = −5 V, I = −11 A
25
35
DS
GS
D
Q
7.2
11.4
gs
gd
Q
DRAIN−SOURCE DIODE CHARACTERISTICS
Source to Drain Diode Forward Voltage V = 0V, I = −2.1 A
V
SD
−0.7
−1.2
42
V
GS
S
I = −11 A, di/dt = 100 A/ms
F
t
rr
Reverse Recovery Time
ns
nC
I = −11 A, di/dt = 100 A/ms
F
Q
Reverse Recovery Charge
30
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
q
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
q
q
JC
CA
a. 50°C/W when
mounted on
b. 105°C/W when
mounted on
c. 125°C/W when
mounted on
2
2
a 1 in pad of 2 oz
copper.
a 0.04 in pad of 2 oz
a minimum pad
copper.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
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2
FDS6675BZ
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
60
50
40
30
20
10
0
4.0
VGS = −10V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80m
DUTY CYCLE = 0.5%MAX
s
V
GS = −3.5V
3.5
3.0
2.5
2.0
1.5
1.0
0.5
VGS = −5V
VGS = −4V
V
GS = −4.5V
VGS = −4V
VGS = −4.5V
VGS = −5V
VGS = −3.5V
VGS = −3V
VGS = −10V
0
1
2
3
4
0
10
20
30
40
50
60
−VDS, DRAIN TO SOURCE VOLTAGE (V)
−ID, DRAIN CURRENT (A)
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs Drain
Current and Gate Voltage
1.6
1.4
1.2
1.0
0.8
0.6
50
ID = −11A
ID = −11A PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
VGS = −10V
40
30
TJ = 150oC
20
10
T
J = 25oC
0
10
−80
−40
0
40
80
100
120
3.0
4.5
6.0
7.5
9.0
−VGS, GATE TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (5C)
TJ
Figure 3. Normalized On−Resistance vs Junction
Figure 4. On−Resistance vs Gate to Source
Temperature
Voltage
60
100
VGS = 0V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
50
10
1
TJ = 150oC
40
30
TJ = 25oC
TJ = 150oC
0.1
20
o
TJ = −55 C
T
J = 25oC
0.01
10
0
o
TJ = −55 C
1E−3
2.0
2.5
3.0
3.5
4.0
4.5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
−VSD, BODY DIODE FORWARD VOLTAGE (V)
−VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage
vs Source Current
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3
FDS6675BZ
TYPICAL CHARACTERISTICS (Continued)
(T = 25°C unless otherwise noted)
J
10
8
4000
Ciss
VDD = −15V
VDD = −10V
1000
Coss
6
4
VDD = −20V
Crss
2
f = 1 MHz
VGS = 0 V
0
100
0.1
0
10
20
30
40
50
1
10
30
−VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
1000
100
10
20
10
TJ = 150oC
TJ = 25oC
1
0.1
0.01
TJ = 125oC
TJ = 25oC
1E−3
1E−4
1
10−2
10−1
tAV , TIME IN AVALANCHE (ms)
100
101
102
0
5
10
15
20
25
30
35
−V (V)
GS
Figure 9. Ig vs VGS
Figure 10. Unclamped Inductive Switching
Capability
12
10
8
100
10
100 us
VGS = −10V
1 ms
10 ms
6
1
THIS AREA IS
100 ms
VGS = −4.5V
LIMITED BY r
DS(on)
4
1 s
SINGLE PULSE
TJ = MAX RATED
0.1
10 s
DC
R
qJA = 125oC/W
2
T
A = 25oC
0
0.01
25
50
75
100
125
150
0.01
0.1
1
10
100
200
VDS, DRAIN to SOURCE VOLTAGE (V)
TA, AMBIENT TEMPERATURE (5C)
Figure 11. Maximum Continuous Drain Current vs
Ambient Temperature
Figure 12. Forward Bias Safe Operating Area
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4
FDS6675BZ
TYPICAL CHARACTERISTICS (Continued)
(T = 25°C unless otherwise noted)
J
104
103
102
10
VGS = −10 V
SINGLE PULSE
qJA = 125 oC/W
R
T
A = 25 oC
1
0.5
10−4
10−3
10−2
10−1
t, PULSE WIDTH (s)
1
10
102
103
Figure 13. Single Pulse Maximum Power Dissipation
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
10−1
10−2
10−3
10−4
0.1
P
DM
0.05
0.02
0.01
t
1
SINGLE PULSE
qJA = 125 oC/W
t
2
R
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
x Z
x R
+ T
J
DM
qJA
qJA A
10−4
10−3
10−2
10−1
t, RECTANGULAR PULSE DURATION (s)
1
10
102
103
Figure 14. Junction To Ambient Transient Thermal Response Curve
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in
the United States and/or other countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC8
CASE 751EB
ISSUE A
DATE 24 AUG 2017
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13735G
SOIC8
PAGE 1 OF 1
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