FDS6675 [ONSEMI]
单 P 沟道，逻辑电平，PowerTrench® MOSFET，-30V，-11A，14mΩ;
| 型号： | FDS6675 |
| 厂家： | 
ONSEMI |
| 描述： | 单 P 沟道，逻辑电平，PowerTrench® MOSFET，-30V，-11A，14mΩ 开关 光电二极管 晶体管 |
| 文件： | 总9页 (文件大小：347K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDS6675
Single P-Channel, Logic Level, PowerTrenchTM MOSFET
General Description
Features
This P-Channel Logic Level MOSFET is produced
using ON Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.
-11 A, -30 V. RDS(ON) = 0.014 W @ VGS = -10 V,
RDS(ON) = 0.020 W @ VGS = -4.5 V.
Low gate charge (30nC typical).
High performance trench technology for extremely low
RDS(ON)
.
These devices are well suited for notebook computer
applications: load switching and power management,
battery charging circuits, and DC/DC conversion.
High power and current handling capability.
SuperSOTTM-6
SuperSOTTM-8
SOIC-16
SOT-23
SO-8
SOT-223
D
D
5
6
7
8
4
3
2
1
D
D
G
S
1
pin
S
SO-8
S
Absolute Maximum Ratings
TA = 25oC unless otherwise noted
Symbol Parameter
FDS6675
Units
V
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
-30
±20
V
Drain Current - Continuous
- Pulsed
(Note 1a)
-11
-50
A
Power Dissipation for Single Operation
(Note 1a)
2.5
W
PD
(Note 1b)
(Note 1c)
1.2
1
TJ,TSTG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient (Note 1a)
Thermal Resistance, Junction-to-Case
50
25
°C/W
°C/W
RqJA
RqJC
(Note 1)
Publication Order Number:
© 1998 Semiconductor Components Industries, LLC.
October-2017, Rev. 3
FDS6675/D
Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol
Parameter
Conditions
Min Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, I D = -250 µA
-30
V
ID = -250 µA, Referenced to 25 oC
mV/oC
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
-22
DBVDSS/DTJ
-1
µA
µA
nA
nA
IDSS
VDS = -24 V, VGS = 0 V
-10
TJ = 55°C
IGSSF
IGSSR
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
100
-100
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250 µA
ID = 250 µA, Referenced to 25 oC
-1
-1.7
4.3
-3
V
mV/oC
Gate Threshold Voltage Temp. Coefficient
DVGS(th)/DTJ
Static Drain-Source On-Resistance
0.011
0.016
0.015
0.014
0.023
0.02
RDS(ON)
VGS = -10 V, I D = -11 A
W
TJ =125°C
VGS = -4.5 V, I D = -9 A
VGS = -10 V, VDS = -5 V
VDS = -10 V, I D = -11 A
ID(ON)
gFS
On-State Drain Current
-50
A
S
Forward Transconductance
32
DYNAMIC CHARACTERISTICS
Ciss
Coss
Crss
Input Capacitance
VDS = -15 V, VGS = 0 V,
f = 1.0 MHz
3000
870
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
360
SWITCHING CHARACTERISTICS (Note 2)
Turn - On Delay Time
Turn - On Rise Time
12
16
22
27
ns
ns
tD(on)
tr
tD(off)
tf
VDS = -15 V, I D = -1 A
VGEN = -10 V, RGEN = 6 W
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
50
100
30
9
80
140
42
ns
ns
Qg
Qgs
Qgd
VDS = -15 V, I D = -11 A,
VGS = -5 V
nC
nC
nC
11
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.1 A (Note 2)
-2.1
-1.2
A
V
IS
VSD
-0.72
Notes:
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by
design while RqCA is determined by the user's board design.
b. 105OC/W on a 0.02 in2
pad of 2oz copper.
a. 50OC/W on a 0.5 in2
pad of 2oz copper.
c. 125OC/W on a 0.003 in2 pad
of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% .
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2
Typical Electrical Characteristics
2.5
2
50
VGS= -10V
-6.0V
-4.5V
40
30
20
10
0
VGS
= -3.5V
-3.5V
-4.0V
1.5
1
-4.5 V
-5.5V
-7.0V
-3.0V
-10V
0.5
0
10
20
30
40
50
0
0.6
- V
1.2
1.8
2.4
3
- I , DRAIN CURRENT (A)
D
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 2. On-Resistance Variation with
Figure 1. On-Region Characteristics.
Dain Current and Gate Voltage.
1.6
0.05
0.04
0.03
0.02
0.01
0
ID = -5.5A
ID
VGS
=
-11A
-10V
=
1.4
1.2
1
T
= 125°C
J
0.8
0.6
25° C
8
-50
-25
0
25
50
75
100
125
150
0
2
4
6
10
T
, JUNCTION TEMPERATURE (° C)
- V , GATE TO SOURCE VOLTAGE (V)
GS
J
Figure 3. On-Resistance Variation with
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
Temperature.
50
10
50
40
30
20
10
0
VDS = -5.0V
T
= -55° C
VGS
= 0V
J
25° C
125° C
T
= 125° C
J
1
0.1
25° C
-55° C
0.01
0.001
0
0.4
0.8
1.2
1
2
3
4
5
- V
, BODY DIODE FORWARD VOLTAGE (V)
- V
, GATE TO SOURCE VOLTAGE (V)
SD
GS
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
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3
Typical Electrical Characteristics (continued)
6000
4000
10
I
= -11A
V
= -5V
D
DS
C
iss
-10V
8
6
4
2
0
2000
1000
500
-15V
C
oss
C
rss
f = 1 MHz
200
100
VGS
=
0 V
0
12
24
36
48
60
0.1
0.2
0.5
1
2
5
10
20 30
Q
, GATE CHARGE (nC)
g
- V
, DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
100
SINGLE PULSE
RqJA=125°C/W
TA = 25°C
30
10
3
0.5
VGS = -10V
SINGLE PULSE
Rq = 125° C/W
JA
0.05
0.01
TA
=
25°C
0.001
0.01
0.1
1
10
100 300
0.05 0.1
0.3
1
3
10
30 50
SINGLE PULSE TIME (SEC)
- V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
1
D = 0.5
0.2
0.5
R
(t) = r(t) * R
JA
q
JA
q
0.2
0.1
R
= 125°C/W
JA
q
0.1
0.05
0.05
P(pk)
0.02
0.01
0.02
0.01
t
1
t
2
Single Pulse
T
- T = P * R
(t)
JA
0.005
J
A
q
Duty Cycle, D = t /t
1
2
0.002
0.001
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
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4
SO-8 Tape and Reel Data and Package Dimensions
SOIC(8lds) Packaging
Configuration: Figure 1.0
ELECTROSTATIC
SENSITIVE DEVICES
DO NOT SHIP OR STORE NEAR STRONG ELECTROSTATIC
ELECTROMAGNETIC, MAGNETIC OR RADIOACTIVE FIELDS
TNR DATE
PT NUMBER
PEEL STRENGTH MIN ______________gms
MAX _____________ gms
ESD Label
Antistatic Cover Tape
Conductive Embossed
Carrier Tape
F63TNR
Label
Pin 1
F
F
F
F
Customized
Label
SOIC-8 Unit Orientation
SOIC (8lds) Packaging Information
Standard
L86Z
Packaging Option
S62Z
D84Z
(no flow code)
Packaging type
TNR
2,500
Rail/Tube
Bag
200
-
TNR
500
Qty per Reel/Tube/Bag
Reel Size
95
-
13” Dia
7” Dia
Box Dimension (mm)
Max qty per Box
343x64x343 530x130x83 76x102x127 184x187x47
5,000
0.0774
0.6060
30,000
0.0774
-
1,000
0.0774
-
2,500
0.0774
0.1182
Weight per unit (gm)
Weight per Reel (kg)
Note/Comments
Bulk
343mm x 342mm x 64mm
Standard Intermediate box
ESD Label
F63TNR Label sample
LOT: CBVK741B019
F63TNLabel
ESD Label
F63TNLabel
QTY: 2500
FSID: FDS9953A
SPEC:
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
QARV:
(F63TNR)2
SOIC(8lds) Tape Leader and Trailer
Configuration: Figure 2.0
Carrier Tape
Cover Tape
Components
Trailer Tape
160mm minimum
Leader Tape
390mm minimum
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5
SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC(8lds) Embossed Carrier Tape
Configuration: Figure 3.0
P0
D0
T
E1
E2
F
W
K0
Wc
B0
Tc
A0
D1
P1
User Direction of Feed
Dimensions are in millimeter
A0
B0
W
D0
D1
E1
E2
F
P1
P0
K0
T
Wc
Tc
Pkg type
0.450
+/-
0.150
SOIC(8lds)
(12mm)
6.50
+/-0.10
5.30
+/-0.10
12.0
+/-0.3
1.55
+/-0.05
1.60
+/-0.10
1.75
+/-0.10
10.25
min
5.50
+/-0.05
8.0
+/-0.1
4.0
+/-0.1
2.1
+/-0.10
9.2
+/-0.3
0.06
+/-0.02
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
0.5mm
maximum
20 deg maximum
Typical
component
cavity
center line
0.5mm
maximum
B0
20 deg maximum component rotation
Typical
component
center line
Sketch A (Side or Front Sectional View)
Component Rotation
Sketch C (Top View)
Component lateral movement
A0
Sketch B (Top View)
Component Rotation
SOIC(8lds) Reel Configuration: Figure 4.0
W1 Measured at Hub
Dim A
Max
Dim A
max
See detail AA
Dim N
7” Diameter Option
B Min
Dim C
See detail AA
Dim D
min
W3
13” Diameter Option
W2 max Measured at Hub
DETAIL AA
Dim W2
Dimensions are in inches and millimeters
Reel
Option
Tape Size
12mm
Dim A
Dim B
Dim C
Dim D
Dim N
Dim W1
Dim W3 (LSL-USL)
7.00
177.8
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
5.906
150
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 – 0.606
11.9 – 15.4
7” Dia
13.00
330
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
7.00
178
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 – 0.606
11.9 – 15.4
12mm
13” Dia
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6
SO-8 Tape and Reel Data and Package Dimensions, continued
SOIC-8 (FS PKG Code S1)
1 : 1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0774
9
www.onsemi.com
7
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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❖
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