FDS6679AZ [ONSEMI]
P 沟道，PowerTrench® MOSFET，-30V，-13A，9mΩ;
| 型号： | FDS6679AZ |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，PowerTrench® MOSFET，-30V，-13A，9mΩ PC 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：591K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDS6679AZ
P-Channel PowerTrench® MOSFET
-30V, -13A, 9mΩ
Features
General Description
Max rDS(on) = 9.3mΩ at VGS = -10V, ID = -13A
This P-Channel MOSFET is producted using ON
Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance.
Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A
Extended VGS range (-25V) for battery applications
HBM ESD protection level of 6kV typical (note 3)
This device is well suited for Power Management and load
switching applications common in Notebook Computers
and Portable Battery Packs.
High performance trench technology for extremely low
rDS(on)
High power and current handing capability
RoHS Compliant
D
D
D
5
6
7
8
4
3
2
1
D
G
S
S
SO-8
S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
-30
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
V
V
±25
(Note 1a)
-13
ID
A
-65
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
2.5
PD
1.2
W
1.0
TJ, TSTG
Operating and Storage Temperature
-55 to +150
°C
Thermal Characteristics
RθJA
RθJC
Thermal Resistance , Junction to Ambient (Note 1a)
Thermal Resistance , Junction to Case (Note 1)
50
25
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
2500 units
FDS6679AZ
FDS6679AZ
13’’
12mm
1
Publication Order Number:
FDS6679AZ/D
©2009 Semiconductor Components Industries, LLC.
October-2017, Rev. 2
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250µA, VGS = 0V
-30
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = -250µA, referenced to
25°C
-20
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = -24V, VGS=0V
VGS = ±25V, VDS=0V
-1
µA
µA
±10
On Characteristics (Note 2)
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250µA
-1
-1.9
6.5
-3
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250µA, referenced to
25°C
mV/°C
V
GS = -10V, ID = -13A
7.7
9.3
VGS = -4.5V, ID = -11A
11.8
14.8
rDS(on)
Drain to Source On Resistance
Forward Transconductance
mΩ
VGS = -10V, ID = -13A,
TJ = 125°C
10.7
55
13.4
gFS
VDS = -5V, ID = -13A
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
2890
500
3845
665
pF
pF
pF
VDS = -15V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
495
745
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
13
15
24
27
ns
ns
ns
ns
VDD = -15V, ID = -1A
V
GS = -10V, RGS = 6Ω
Turn-Off Delay Time
Fall Time
210
92
336
148
V
DS = -15V, VGS = -10V,
Qg
Total Gate Charge
68
96
54
nC
ID = -13A
Qg
Total Gate Charge
38
10
17
nC
nC
nC
VDS = -15V, VGS = -5V,
Qgs
Qgd
Gate to Source Gate Charge
Gate to Drain Charge
I
D = -13A
Drain-Source Diode Characteristic
VSD
trr
Source to Drain Diode Forward Voltage VGS = 0V, IS = -2.1A
-0.7
-1.2
40
V
Reverse Recovery Time
IF = -13A, di/dt = 100A/µs
IF = -13A, di/dt = 100A/µs
ns
nC
Qrr
Reverse Recovery Charge
-31
Notes:
1:
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
θJA
drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
θJC
θCA
a) 50°C/W when
mounted on a 1 in
pad of 2 oz copper
b)105°C/W when
mounted on a .04 in
pad of 2 oz copper
c) 125°C/W when
mounted on a
minimun pad
2
2
Scale 1 : 1 on letter size paper
2: Pulse Test:Pulse Width <300µs, Duty Cycle <2.0%
3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
www.onsemi.com
2
Typical Characteristics TJ = 25°C unless otherwise noted
70
60
50
40
30
20
10
0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = -3.5V
VGS = -4V
VGS = -10V
VGS = -5V
VGS = -4.5V
VGS = -4V
VGS = -4.5V
VGS = -3.5V
VGS = -5V
VGS = -3V
VGS = -10V
50
0
1
2
3
4
0
10
20
30
40
60
70
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT(A)
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance vs Drain
Current and Gate Voltage
1.6
30
ID = -13A
GS = -10V
PULSE DURATION = 80µs
ID = -13A
V
DUTY CYCLE = 0.5%MAX
1.4
1.2
1.0
0.8
0.6
20
10
0
TJ = 150oC
TJ = 25oC
-80
-40
0
40
80
120
160
10
3.0
4.5
6.0
7.5
9.0
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance vs Junction
Temperature
Figure 4. On-Resistance vs Gate to Source
Voltage
100
70
VGS = 0V
PULSE DURATION = 80µs
60
50
40
30
20
10
0
DUTY CYCLE = 0.5%MAX
10
TJ = 150oC
1
TJ = 25oC
TJ = 150oC
0.1
TJ = -55oC
0.01
TJ = 25oC
TJ = -55oC
1E-3
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
2.0
2.5
3.0
3.5
4.0
4.5
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs Source Current
www.onsemi.com
3
Typical Characteristics TJ = 25°C unless otherwise noted
10
8
10000
1000
100
Ciss
VDD = -10V
Coss
6
VDD = -15V
VDD = -20V
Crss
4
2
f = 1MHz
GS = 0V
V
0
30
0
15
30
45
60
75
0.1
1
10
Qg, GATE CHARGE(nC)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
1000
20
100
10
10
TJ = 150oC
TJ = 25oC
1
0.1
TJ = 125oC
TJ = 25oC
0.01
1E-3
1E-4
1
10-2
10-1
100
101
102
0
5
10
15
20
25
30
35
tAV, TIME IN AVALANCHE(ms)
-VGS(V)
Figure 9. Ig vs VGS
Figure 10. Unclamped Inductive Switching
Capability
16
14
12
10
8
100
100 us
10
VGS = -10V
1 ms
10 ms
1
0.1
THIS AREA IS
LIMITED BY rDS(on)
100 ms
VGS = -4.5V
6
1 s
SINGLE PULSE
J = MAX RATED
4
T
10 s
DC
RθJA = 125 oC/W
TA = 25 oC
2
0
25
0.01
50
75
100
125
150
0.01
0.1
1
10
100 200
TA, AMBIENT TEMPERATURE (oC)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Maximum Continuous Drain Current vs
Ambient Temperature
Figure 12. Forward Bias Safe Operating Area
www.onsemi.com
4
Typical Characteristics TJ = 25°C unless otherwise noted
104
103
102
VGS = -10 V
SINGLE PULSE
10
RθJA = 125 oC/W
TA = 25 oC
1
0.5
10-4
10-3
10-2
10-1
1
10
102
103
t, PULSE WIDTH (sec)
Figure 13. Single Pulse Maximum Power Dissipation
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
10-1
0.1
P
0.05
0.02
0.01
DM
10-2
10-3
10-4
t
1
t
SINGLE PULSE
RθJA = 125 oC/W
2
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
J
x Z
x R
+ T
θJA A
DM
θJA
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
102
103
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
www.onsemi.com
5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
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Order Literature: http://www.onsemi.com/orderlit
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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
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Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
www.onsemi.com
❖
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