FDS6680A [ONSEMI]
单 N 沟道,逻辑电平,PowerTrench® MOSFET,30V,12.5A,9.5mΩ;型号: | FDS6680A |
厂家: | ONSEMI |
描述: | 单 N 沟道,逻辑电平,PowerTrench® MOSFET,30V,12.5A,9.5mΩ 开关 光电二极管 晶体管 |
文件: | 总6页 (文件大小:311K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
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FDS6680A
Single N-Channel, Logic Level, PowerTrench® MOSFET
Features
General Description
• 12.5 A, 30 V RDS(ON) = 9.5 mΩ @ VGS = 10 V
RDS(ON) = 13 mΩ @ VGS = 4.5 V
This N-Channel Logic Level MOSFET is produced
using
ON
Semiconductor’s
advanced
Power
Trench process that has been especially tailored to
minimize the on-state resistance and yet maintain
superior switching performance.
• Ultra-low gate charge
• High performance trench technology for extremely
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
low RDS(ON)
• High power and current handling capability
D
5
6
7
8
4
3
2
1
D
D
D
G
SO-8
S
S
S
Pin 1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
V
30
VGSS
Gate-Source Voltage
±20
ID
Drain Current – Continuous
– Pulsed
(Note 1a)
12.5
A
50
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
2.5
PD
W
1.2
1.0
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
RθJA
°C/W
Thermal Resistance, Junction-to-Case
RθJC
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
2500 units
FDS6680A
FDS6680A
13’’
12mm
Publication Order Number:
FDS6680A/D
©2012 Semiconductor Components Industries, LLC.
October-2017, Rev. 6
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
30
V
VGS = 0 V,
ID = 250 µA, Referenced to 25°C
DS = 24 V, GS = 0 V
ID = 250 µA
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
25
mV/°C
Zero Gate Voltage Drain Current
V
V
1
µA
µA
nA
10
VDS = 24 V, VGS = 0 V, TJ=55°C
VGS = ±20 V, VDS = 0 V
IGSS
Gate–Body Leakage
±100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
1
2
3
V
V
DS = VGS
,
ID = 250 µA
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
–4.9
ID = 250 µA, Referenced to 25°C
mV/°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 10 V,
ID = 12.5 A
ID = 10.5 A
7.8
9.9
11.0
9.5
13
15
mΩ
V
V
GS = 4.5 V,
GS = 10 V, ID = 12.5 A, TJ=125°C
ID(on)
gFS
On–State Drain Current
VGS = 10 V,
VDS = 15 V,
VDS = 5 V
25
A
S
Forward Transconductance
ID = 12.5 A
64
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
1620
380
160
1.3
pF
pF
pF
Ω
V
DS = 15 V,
V GS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1.0 MHz
V
V
GS = 15 mV, f = 1.0 MHz
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
10
5
19
10
43
27
23
ns
ns
DD = 15 V,
ID = 1 A,
RGEN = 6 Ω
VGS = 10 V,
27
15
16
5
ns
ns
Qg
Qgs
Qgd
nC
nC
nC
VDS = 15 V,
V
ID = 12.5 A,
GS = 5 V
5.8
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
2.1
1.2
A
V
Drain–Source Diode Forward
VGS = 0 V, IS = 2.1 A
Voltage
VSD
(Note 2)
0.73
trr
Diode Reverse Recovery Time
IF = 12.5 A, diF/dt = 100 A/µs
28
18
ns
Qrr
Diode Reverse Recovery Charge
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°C/W when
mounted on a 1in2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
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2
Typical Characteristics
50
2.2
2
VGS = 10V
6.0V
4.0V
40
30
20
10
0
4.5V
VGS = 3.5V
3.5V
1.8
1.6
1.4
1.2
1
4.0V
4.5V
5.0V
6.0V
10V
40
3.0V
0.8
0
0.5
1
1.5
2
0
10
20
30
50
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.4
1.2
1
0.03
ID = 12.5A
ID = 6.2A
VGS = 10V
0.025
0.02
TA = 125oC
0.015
0.01
0.8
0.6
TA = 25oC
0.005
2
4
6
8
10
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resist ance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
50
40
30
20
10
0
VGS = 0V
VDS = 5V
10
1
TA = 125oC
25oC
TA = 125oC
0.1
-55oC
-55oC
0.01
0.001
0.0001
25oC
0
0.2
0.4
0.6
0.8
1
1.2
1.5
2
2.5
3
3.5
4
V
SD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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3
Typical Characteristics
10
2400
1800
1200
600
0
f = 1 MHz
VGS = 0 V
ID = 12.5A
8
VDS = 10V
15V
6
4
2
0
Ciss
20V
Coss
Crss
0
5
10
15
20
25
30
0
5
10
15
20
25
30
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
50
40
30
20
10
0
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
100µs
RDS(ON) LIMIT
1ms
10ms
100ms
1s
10s
1
DC
VGS = 10V
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
0.1
0.01
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA = 125oC/W
0.2
0.1
0.1
0.05
P(pk)
0.02
t1
t2
0.01
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
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4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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