FDS6680AS [ONSEMI]
N 沟道 PowerTrench® SyncFET™，30V，11.5A，10.0mΩ;
| 型号： | FDS6680AS |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 PowerTrench® SyncFET™，30V，11.5A，10.0mΩ 开关 光电二极管 晶体管 |
| 文件： | 总10页 (文件大小：855K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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May 2008
tm
FDS6680AS
30V N-Channel PowerTrench® SyncFET™
General Description
Features
The FDS6680AS is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
•
11.5 A, 30 V. RDS(ON) max= 10.0 mΩ @ VGS = 10 V
RDS(ON) max= 12.5 mΩ @ VGS = 4.5 V
•
•
•
Includes SyncFET Schottky body diode
Low gate charge (22nC typical)
RDS(ON)
and low gate charge.
The FDS6680AS
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDS6680AS as the low-side switch in
a
synchronous rectifier is indistinguishable from the
performance of the FDS6680 in parallel with a Schottky
diode.
High performance trench technology for extremely low
RDS(ON) and fast switching
•
High power and current handling capability
Applications
• DC/DC converter
• Low side notebooks
D
D
D
5
6
7
8
4
3
2
1
D
G
S
S
SO-8
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
V
30
VGSS
ID
Gate-Source Voltage
V
A
±20
Drain Current – Continuous
– Pulsed
(Note 1a)
11.5
50
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
2.5
W
1.2
1
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
RθJA
°C/W
°C/W
RθJC
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6680AS
FDS6680AS
13’’
12mm
2500 units
FDS6680AS Rev B2(X)
©2008 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = 1 mA
30
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
26
ID = 10 mA, Referenced to 25°C
mV/°C
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage
VDS = 24 V,
VGS = 0 V
VDS = 0 V
500
µA
IGSS
nA
VGS = ±20 V,
±100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 1 mA
1
1.5
3
V
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
ID = 10 mA, Referenced to 25°C
–4
mV/°C
mΩ
Static Drain–Source
On–Resistance
VGS = 10 V,
GS = 4.5 V,
ID = 11.5 A
ID = 9.5 A
8.4
10.3
12.3
10.0
12.5
15.5
V
VGS=10 V, ID =11.5A, TJ=125°C
ID(on)
gFS
On–State Drain Current
VGS = 10 V,
VDS = 15 V,
VDS = 5 V
50
A
S
Forward Transconductance
ID = 11.5 A
48
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
1240
350
120
1.4
pF
pF
pF
Ω
V
DS = 15 V,
V GS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1.0 MHz
VGS = 15 mV,
f = 1.0 MHz
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn–On Delay Time
9
18
10
42
21
20
22
32
20
30
16
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
nC
V
DS = 15 V,
ID = 1 A,
RGEN = 6 Ω
Turn–On Rise Time
5
VGS = 10 V,
Turn–Off Delay Time
Turn–Off Fall Time
27
11
11
12
18
11
22
12
3.5
3.4
Turn–On Delay Time
Turn–On Rise Time
V
DS = 15 V,
ID = 1 A,
RGEN = 6 Ω
VGS = 4.5 V,
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge at Vgs=10V
Total Gate Charge at Vgs=5V
Gate–Source Charge
Gate–Drain Charge
Qg
Qg
(TOT)
V
DD = 15 V, ID = 11.5 A,
Qgs
Qgd
FDS6680AS Rev B2(X)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Unit
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
3.5
0.7
A
V
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 3.5 A
VGS = 0 V, IS = 7 A
IF = 11.5A,
(Note 2)
(Note 2)
0.5
0.6
18
Trr
Qrr
Diode Reverse Recovery Time
nS
nC
Diode Reverse Recovery Charge
diF/dt = 300 A/µs
(Note 3)
12
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°/W when
b) 105°/W when
c) 125°/W when mounted on a
minimum pad.
mounted on a 1 in2
pad of 2 oz copper
mounted on a .04 in2
pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
FDS6680AS Rev B2(X)
Typical Characteristics
50
2
1.8
1.6
1.4
1.2
1
VGS = 10V
6.0V
3.5V
4.0V
4.5V
VGS = 3.0V
40
30
20
10
0
3.0V
3.5V
4.0V
4.5V
5.0V
6.0V
2.5V
10.0V
0.8
0
10
20
30
40
50
0
0.4
0.8
1.2
1.6
2
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.4
1.2
1
0.05
0.04
0.03
0.02
0.01
0
ID = 11.5A
GS = 10V
ID = 6A
V
TA = 125oC
0.8
0.6
TA = 25oC
2
4
6
8
10
-50
-25
0
25
50
75
100
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
50
10
VGS = 0V
VDS = 5V
40
30
20
10
0
1
TA = 125oC
0.1
25oC
TA = 125oC
0.01
-55oC
-55oC
0.001
25oC
0.0001
0
0.2
0.4
0.6
0.8
1
1.5
2
2.5
3
3.5
4
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6680AS Rev B2(X)
Typical Characteristics (continued)
10
1800
1500
1200
900
600
300
0
f = 1MHz
VGS = 0 V
ID =11.5A
VDS = 10V
8
6
4
2
0
20V
Ciss
15V
Coss
Crss
0
5
10
15
20
25
0
5
10
15
20
25
30
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
1000
100
10
SINGLE PULSE
RθJA = 125°C/W
TA = 25°C
RDS(ON) LIMIT
100 s
µ
1ms
10ms
100ms
1s
10s
DC
1
VGS = 10V
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
0.1
0.01
0.1
1
10
100
0.01
0.1
1
10
100
1000
V
DS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * Rθ
JA
0.2
RθJA = 125 °C/W
0.1
0.1
0.05
0.02
P(pk)
t1
0.01
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6680AS Rev B2(X)
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky
diode in parallel with a MOSFET. Figure 12 shows the
reverse recovery characteristic of the FDS6680AS.
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase
the power in the device.
0.1
TA = 125oC
0.01
0.001
TA = 100oC
0.0001
0.00001
TA = 25oC
0.000001
0
5
10
15
20
25
30
VDS, REVERSE VOLTAGE (V)
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
10nS/DIV
Figure 12. FDS6680AS SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6680).
0
10nS/div
Figure 13. Non-SyncFET (FDS6680) body
diode reverse recovery characteristic.
FDS6680AS Rev B2(X)
Typical Characteristics
L
VDS
BVDSS
tP
VGS
RGE
VDS
VDD
+
-
IAS
DUT
VDD
0V
VGS
vary tP to obtain
required peak IAS
tp
IAS
0.01Ω
tAV
Figure 15. Unclamped Inductive Load Test
Figure 16. Unclamped Inductive
Waveforms
Circuit
Drain Current
Same type as
+
50kΩ
10V
10µF
-
1µF
+
VDD
QG(TOT)
-
VGS
10V
VGS
DUT
QGD
QGS
Ig(REF
Charge, (nC)
Figure 17. Gate Charge Test Circuit
Figure 18. Gate Charge Waveform
tON
td(ON)
tOFF
td(OFF
RL
tf
VDS
tr
VDS
)
90%
90%
+
-
VGS
RGEN
10%
10%
0V
DUT
VDD
90%
50%
VGS
50%
VGS
Pulse Width ≤ 1µs
Duty Cycle ≤ 0.1%
10%
0V
Pulse Width
Figure 19. Switching Time Test
Circuit
Figure 20. Switching Time Waveforms
FDS6680AS Rev B2(X)
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Definition of Terms
Datasheet Identification
Product Status
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Advance Information
Formative or In Design
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
Preliminary
First Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve the design.
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Full Production
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Fairchild Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I34
FDS6680AS Rev B2(X)
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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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