FDS6681Z [ONSEMI]
P 沟道，PowerTrench® MOSFET，30V，-20A，4.6mΩ;
| 型号： | FDS6681Z |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，PowerTrench® MOSFET，30V，-20A，4.6mΩ PC 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：245K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – P-Channel,
POWERTRENCH)
V
R
MAX
I
D MAX
DSS
DS(on)
−30 V
−20 A
4.6 mW @ −10 V
6.5 mW @ −4.5 V
30 V
P−Channel
FDS6681Z
General Description
5
6
7
8
This P−Channel MOSFET is produced using onsemi’s advanced
PowerTrench process that has been especially tailored to minimize the
on−state resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers and Portable
Battery Packs.
4
3
2
1
Features
• –20 A, –30 V
D
D
♦ R
♦ R
= 4.6 mΩ @ V = –10 V
DS(ON)
GS
D
= 6.5 mΩ @ V = –4.5 V
D
DS(ON)
GS
• Extended V
Range (–25 V) for Battery Applications
GSS
G
• HBM ESD Protection Level of 8 kV Typical (Note 3)
• High Performance Trench Technology for Extremely Low R
• High Power and Current Handling Capability
• Termination is Lead−free and RoHS Compliant
• This is a Pb−Free and Halide Free Device
S
S
S
DS(ON)
Pin 1
SOIC8
CASE 751EB
MARKING DIAGRAM
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Drain−Source Voltage
Ratings
−30
25
Unit
V
FDS6681Z
ALYW
V
DSS
V
GSS
Gate−Source Voltage
V
I
Drain Current
Continuous (Note 1a)
Pulsed
−20
−105
2.5
A
D
FDS6681Z
= Specific Device Code
A
= Assembly Site
P
Power Dissipation
for Single Operation
(Note 1a)
W
D
L
YW
= Wafer Lot Number
= Assembly Start Week
(Note 1b)
1.2
(Note 1c)
1.0
T ,
STG
Operating and Storage Junction
Temperature Range
−55 to +150 °C
J
ORDERING INFORMATION
T
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
†
Device
FDS6681Z
Package
Shipping
SOIC8
2500 /
(Pb−Free)
Tape & Reel
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifica-
tions Brochure, BRD8011/D.
R
Thermal Resistance,
Junction−to−Ambient
50
_C/W
q
JA
(Note 1a)
(Note 1)
R
Thermal Resistance,
Junction−to−Case
25
_C/W
q
JC
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
November, 2022 − Rev.3
FDS6681Z/D
FDS6681Z
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain−Source Breakdown Voltage
V
= 0 V, I = −250 mA
−30
−
−
−
V
DSS
GS
D
Breakdown Voltage
Temperature Coefficient
I = −250 mA, Referenced to 25_C
D
−
−26
mV/_C
DBVDSS
DTJ
I
Zero Gate Voltage Drain Current
V
V
= −24 V, V = 0 V
−
−
−
−
−1
mA
mA
DSS
GSS
DS
GS
I
Gate−Body Leakage
=
25 V, V = 0 V
10
GS
DS
ON CHARACTERISTICS (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V , I = −250 mA
−1
−1.8
−3
V
GS
D
Gate Threshold Voltage
Temperature Coefficient
I = −250 mA, Referenced to 25_C
D
−
6
−
mV/_C
DVGS(th)
DTJ
R
Static Drain−Source On−Resistance
V
GS
V
GS
V
GS
V
DS
= −10 V, I = −20 A
−
−
−
−
3.8
5.2
5.0
79
4.6
6.5
6.3
−
mW
DS(on)
D
= −4.5 V, I = −17 A
D
= −10 V, I = −20 A, T = 125_C
D
J
g
FS
Forward Transconductance
= −5 V, I = −20 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= −15 V, V = 0 V,
−
−
−
7540
1400
1120
−
−
−
pF
pF
pF
iss
DS
GS
f = 1.0 MHz
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
rss
SWITCHING CHARACTERISTICS (Note 2)
t
Turn−On Delay Time
Turn−On Rise Time
Turn−Off Delay Time
Turn−Off Fall Time
V
V
= −15 V, I = −1 A,
−
−
−
−
−
−
−
−
20
9
35
18
ns
ns
d(on)
DD
GS
D
= −10 V, R
= 6 W
GEN
t
r
t
660
380
185
105
26
1060
610
260
150
−
ns
d(off)
t
f
ns
Q
Q
Total Gate Charge at V = −10 V
V
DS
= −15 V, I = −20 A
nC
nC
nC
nC
g(TOT)
g(TOT)
GS
D
Total Gate Charge at V = −5 V
GS
Q
Q
Gate−Source Charge
Gate−Drain Charge
gs
47
−
gd
DRAIN–SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain−Source Diode Forward Current
I
S
−
−
−
−
−
−2.1
−1.2
−
A
V
V
Drain−Source Diode Forward Voltage
Reverse Recovery Time
V
= 0 V, I = −2.1 A
(Note 2)
(Note 2)
−0.7
125
94
SD
RR
GS
S
t
I = −20 A,
ns
nC
F
dI /dt = 100 A/ms
F
Q
Reverse Recovery Charge
−
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
q
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
q
q
JC
CA
a) 50°C/W (10 s)
62.5°C/W steady state
b) 105°C/W when mounted
2
c) 125°C/W when mounted
on a minimum pad.
when mounted on a
on a .04 in pad of 2 oz
2
1in pad of 2 oz
copper.
copper.
Scale 1:1 on letter size paper
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
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2
FDS6681Z
TYPICAL CHARACTERISTICS
2.4
105
90
V
GS
= −3.5 V
V
= −10 V
GS
−4.0 V
−4.5 V
2.2
2
−4.0 V
−3.5 V
−6.0 V
75
1.8
1.6
60
−4.5 V
45
30
15
0
−5.0 V
1.4
1.2
1
−6.0 V
−8.0 V
−3.0 V
−10 V
0.8
1
0
0.5
1.5
2
0
75
−I DRAIN CURRENT (A)
15
30
45
60
90
105
−V , DRAIN SOURCE VOLTAGE (V)
D,
DS
Figure 2. On−Resistance Variation with
Figure 1. On−Region Characteristics
Drain Current and Gate Voltage
0.012
0.01
1.6
I
V
= −20 A
I
D
= −10 A
D
= −10 V
GS
1.4
1.2
1
0.008
0.006
T = 125°C
J
0.8
0.6
0.004
0.002
T = 25°C
A
8
6
2
4
10
−50 −30 −10
130 150
90 110
10
30 50 70
T , JUNCTION TEMPERATURE (°C)
J
−V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
Temperature
100
80
1000
100
10
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
V
GS
= 0 V
V
DS
= −5 V
60
T = 125°C
J
T = 125°C
A
1
40
0.1
T = 25°C
J
25°C
20
0
0.01
−55°C
T = −55°C
J
0.001
1
1
4
0
1.2
2
3
5
0.2
0.4
0.6
0.8
−V , GATE TO SOURCE VOLTAGE (V)
GS
−V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 6. Body Diode Forward Voltage
Figure 5. Transfer Characteristics
Variation with Source Current and Temperature
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3
FDS6681Z
TYPICAL CHARACTERISTICS (continued)
10000
10
8
f = 1 MHz
= 0 V
I
D
= −20 A
V
DS
= −10 V
V
GS
8000
C
iss
−15 V
6
4
6000
−20 V
4000
C
oss
2000
0
2
0
C
rss
120
Q ,GATE CHARGE (nC)
80
160
0
40
5
0
10
30
200
15
20
25
−V , DRAIN TO SOURCE VOLTAGE (V)
G
DS
Figure 8. Capacitance Characteristics
Figure 7. Gate Charge Characteristics
1000
100
10
50
40
30
20
R
LIMIT
DS(ON)
SINGLE PULSE
R
= 125°C/W
θ
JA
100 μs
T = 25°C
1 ms
10 ms
100 ms
1 s
10 s
1
V
= −10 V
GS
DC
SINGLE PULSE
= 125°C/W
0.1
10
0
R
θ
JA
T = 25°C
A
0.01
0.001
0.1
1000
0.01
10
1
10
100
100
0.01
1
0.1
−V , DRAIN−SOURCE VOLTAGE (V)
DS
t ,TIME (s)
1
Figure 10. Single Pulse Maximum Power
Dissipation
Figure 9. Maximum Safe Operating Area
1
D = 0.5
R
(t) = r(t) * R
q
JA
q
JA
0.2
0.1
R
= 125°C/W
0.1
q
JA
0.05
P
(pk)
t
1
0.02
0.01
0.01
t
2
T − T = P * R (t)
q
JA
J
A
SINGLE PULSE
Duty Cycle, D = t / t
1
2
0.001
0.0001
0.01
0.1
1
10
1000
0.001
100
t , TIME (s)
1
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
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4
FDS6681Z
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries.
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC8
CASE 751EB
ISSUE A
DATE 24 AUG 2017
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13735G
SOIC8
PAGE 1 OF 1
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