FDS6690AS [ONSEMI]
N 沟道，PowerTrench® SyncFET™，30V，10A，12mΩ;
| 型号： | FDS6690AS |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® SyncFET™，30V，10A，12mΩ PC 开关 光电二极管 晶体管 |
| 文件： | 总9页 (文件大小：714K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDS6690AS
30V N-Channel PowerTrench® SyncFET™
Features
General Description
•
10 A, 30 V. RDS(ON) max= 12 mΩ @ VGS = 10 V
RDS(ON) max= 15 mΩ @ VGS = 4.5 V
The FDS6690AS is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
•
•
•
Includes SyncFET Schottky diode
RDS(ON)
and low gate charge.
The FDS6690AS
Low gate charge (16nC typical)
includes an integrated Schottky diode using ON
Semiconductor’s monolithic SyncFET technology.
High performance trench technology for extremely low
RDS(ON)
The performance of the
low-side switch in
FDS6690AS
as
the
a
synchronous rectifier is
close to the performance of the FDS6690A in parallel
with a Schottky diode.
•
High power and current handling capability
Applications
• DC/DC converter
• Low side notebooks
D
D
D
5
6
7
8
4
3
2
1
D
G
S
S
SO-8
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
Gate-Source Voltage
30
V
VGSS
ID
V
A
±20
Drain Current – Continuous
– Pulsed
(Note 1a)
10
50
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
2.5
W
1.2
1
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
RθJA
°C/W
°C/W
RθJC
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
2500 units
FDS6690AS
FDS6690AS
13’’
12mm
Publication Order Number:
FDS6690AS/D
©2008 Semiconductor Components Industries, LLC.
October-2017, Rev 1
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = 1 mA
30
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 10 mA, Referenced to 25°C
30
mV/°C
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage
VDS = 24 V,
VGS = 0 V
VDS = 0 V
500
µA
IGSS
nA
VGS = ±20 V,
±100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 1 mA
1
1.6
3
V
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
ID = 10 mA, Referenced to 25°C
–4
mV/°C
mΩ
Static Drain–Source
On–Resistance
VGS = 10 V,
GS = 4.5 V,
ID = 10 A
ID = 8.5 A
10
12
15
12
15
19
V
VGS=10 V, ID =10A, TJ=125°C
ID(on)
gFS
On–State Drain Current
VGS = 10 V,
VDS = 15 V,
VDS = 5 V
ID = 10 A
50
A
S
Forward Transconductance
45
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
910
270
100
2.0
pF
pF
pF
Ω
V
DS = 15 V,
V GS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1.0 MHz
VGS = 15 mV,
f = 1.0 MHz
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn–On Delay Time
8
5
16
10
40
12
20
20
27
16
23
13
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
nC
V
DS = 15 V,
ID = 1 A,
RGEN = 6 Ω
Turn–On Rise Time
VGS = 10 V,
Turn–Off Delay Time
Turn–Off Fall Time
25
6
Turn–On Delay Time
Turn–On Rise Time
11
11
15
8
V
DS = 15 V,
ID = 1 A,
RGEN = 6 Ω
VGS = 4.5 V,
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge at Vgs=10V
Total Gate Charge at Vgs=5V
Gate–Source Charge
Gate–Drain Charge
16
9
Qg
Qg
(TOT)
V
DD = 15 V, ID = 10 A
Qgs
Qgd
2.3
3.0
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2
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
3.5
0.7
A
V
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 3.5 A
(Note 2)
(Note 3)
0.6
Trr
Qrr
Diode Reverse Recovery Time
IF = 10A,
16
9
nS
nC
Diode Reverse Recovery Charge
diF/dt = 300 A/µs
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°/W when
b) 105°/W when
c) 125°/W when mounted on a
minimum pad.
mounted on a 1 in2
pad of 2 oz copper
mounted on a .04 in2
pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
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3
Typical Characteristics
50
2.2
1.8
1.4
1
VGS = 4.0V
VGS = 10V
4.0V
40
30
20
10
0
6.0V
4.5V
3.5V
4.0V
3.0V
4.5V
5.0V
6.0V
10V
2.5V
0.6
0
10
20
30
40
50
0
0.5
1
1.5
2
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.06
0.05
0.04
0.03
0.02
0.01
0
1.6
ID = 10A
GS = 10V
ID = 5A
V
1.45
1.3
1.15
1
TA = 125oC
0.85
0.7
TA = 25oC
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
50
40
30
20
10
0
10
VGS = 0V
VDS = 5V
1
TA = 125oC
25oC
0.1
0.01
-55oC
TA = 125oC
-55oC
25oC
0.001
1
1.5
2
2.5
3
3.5
4
0
0.2
0.4
0.6
0.8
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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4
Typical Characteristics
1400
1200
1000
800
600
400
200
0
10
f = 1MHz
VGS = 0 V
ID =10A
8
VDS = 10V
Ciss
20V
6
15V
4
Coss
2
0
Crss
0
5
10
15
20
25
30
0
3
6
9
12
15
18
21
Qg, GATE CHARGE (nC)
V
DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
50
40
30
20
10
0
RDS(ON) LIMIT
SINGLE PULSE
RθJA = 125°C/W
TA = 25°C
100 s
µ
1ms
10ms
100ms
1s
10s
1
DC
VGS = 10V
SINGLE PULSE
RθJA = 125oC/W
0.1
0.01
T
A = 25oC
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA = 125 °C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
t1
0.01
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
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5
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
ON Semiconductor’s SyncFET process embeds
Schottky barrier diodes exhibit significant leakage
at high temperature and high reverse voltage.
This will increase the power in the device.
a
Schottky
PowerTrench MOSFET. This diode exhibits
similar characteristics to discrete external
Schottky diode in parallel with MOSFET.
diode
in
parallel
with
a
0.1
a
Figure 12 shows the reverse recovery
characteristic of the FDS6690AS.
0.01
TA = 125oC
0.001
TA = 100oC
0.0001
0.00001
TA = 25oC
0.000001
0
5
10
15
20
25
30
VDS, REVERSE VOLTAGE (V)
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
10nS/DIV
Figure 12. FDS6690AS SyncFET body
diode reverse recovery characteristic.
For comparison purposes, Figure 13 shows the
reverse recovery characteristics of the body diode
of an equivalent size MOSFET produced without
SyncFET (FDS6690A).
0V
10nS/DIV
Figure 13. Non-SyncFET (FDS6690A)
body diode reverse recovery
characteristic.
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6
Typical Characteristics
L
VDS
BVDSS
tP
VGS
RGE
VDS
VDD
+
-
IAS
DUT
VDD
0V
VGS
vary tP to obtain
required peak IAS
tp
IAS
0.01Ω
tAV
Figure 15. Unclamped Inductive Load Test
Figure 16. Unclamped Inductive
Waveforms
Circuit
Drain Current
Same type as
50kΩ
10V
+
F
10µ
-
1µF
+
VDD
QG(TOT)
-
VGS
10V
VGS
DUT
QGD
QGS
Ig(REF
Charge, (nC)
Figure 17. Gate Charge Test Circuit
Figure 18. Gate Charge Waveform
tON
td(ON)
tOFF
td(OFF
RL
tf
VDS
tr
VDS
)
90%
90%
+
-
VGS
RGEN
10%
10%
0V
DUT
VDD
90%
50%
VGS
50%
VGS
Pulse Width ≤ 1µs
Duty Cycle ≤ 0.1%
10%
0V
Pulse Width
Figure 19. Switching Time Test
Circuit
Figure 20. Switching Time Waveforms
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7
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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