FDS6898AZ-F085 [ONSEMI]
20 V、9.4 A、10 mΩ、SO-8，逻辑电平双通道 N 沟道 PowerTrench®;
| 型号： | FDS6898AZ-F085 |
| 厂家： | 
ONSEMI |
| 描述： | 20 V、9.4 A、10 mΩ、SO-8，逻辑电平双通道 N 沟道 PowerTrench® 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：408K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDS6898AZ-F085
Dual N-Channel Logic Level PWM Optimized PowerTrenchÒ
MOSFET
General Description
Features
These N-Channel Logic Level MOSFETs are produced
·
9.4 A, 20 V
RDS(ON) = 14 mW @ VGS = 4.5 V
RDS(ON) = 18 mW @ VGS = 2.5 V
using
ON
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
·
·
·
Low gate charge (16 nC typical)
ESD protection diode (note 3)
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
High performance trench technology for extremely
low RDS(ON)
·
High power and current handling capability
· Qualified to AEC Q101
· RoHS Compliant
D1
5
4
3
2
D1
D2
Q1
D2
6
7
G1
SO-8
S1
Q2
G2
8
1
S2
Pin 1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
20
V
V
A
VGSS
Gate-Source Voltage
± 12
ID
Drain Current – Continuous
– Pulsed
(Note 1a)
9.4
38
PD
W
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
2
(Note 1a)
(Note 1b)
(Note 1c)
1.6
1
0.9
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
RqJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1)
78
40
°C/W
°C/W
RqJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
2500 units
FDS6898AZ
FDS6898AZ-F085
13’’
12mm
©2010 Semiconductor Components Industries, LLC.
September-2017, Rev. 1
1
Publication Order Number:
FDS6898AZ-F085/D
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V,
ID = 250 mA
20
V
Breakdown Voltage Temperature
Coefficient
21
DBVDSS
DTJ
ID = 250 mA, Referenced to 25°C
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 16 V, VGS = 0 V
1
mA
mA
mA
IGSSF
IGSSR
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VGS = 12 V, VDS = 0 V
VGS = –12 V, VDS = 0 V
10
–10
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS
,
ID = 250 mA
0.5
19
1
1.5
V
Gate Threshold Voltage
Temperature Coefficient
–3.5
DVGS(th)
DTJ
RDS(on)
ID = 250 mA, Referenced to 25°C
mV/°C
Static Drain–Source
On–Resistance
VGS = 4.5 V, ID = 9.4 A
VGS = 2.5 V, ID = 8.3 A
VGS = 4.5 V, ID = 9.4 A,TJ = 125°C
10
13
14
14
18
21
mW
ID(on)
gFS
On–State Drain Current
VGS = 4.5V,
VDS = 5 V,
VDS = 5 V
ID = 9.4 A
A
S
Forward Transconductance
47
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
1821
440
pF
pF
pF
VDS = 10 V, V GS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
208
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
10
15
34
16
16
3
20
27
55
29
23
ns
ns
VDD = 10 V,
ID = 1 A,
VGS = 4.5 V, RGEN = 6 W
ns
ns
Qg
Qgs
Qgd
nC
nC
nC
VDS = 10 V, ID = 9.4 A,
VGS = 4.5 V
4
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
1.3
1.2
A
V
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 1.3 A
(Note 2)
0.7
Notes:
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RqJC is guaranteed by design while RqCA is determined by the user's board design.
a) 78°C/W when
mounted on a 0.5in2
pad of 2 oz copper
b) 125°C/W when
mounted on a 0.02
in2 pad of 2 oz
copper
c) 135°C/W when mounted on a
minimum mounting pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied
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2
Typical Characteristics
2.2
2
40
VGS = 4.5V
3.0V
2.5V
VGS = 2.0V
30
20
10
0
1.8
1.6
1.4
1.2
1
2.0V
2.5V
3.0V
4.0V
4.5V
0.8
0
10
20
ID, DRAIN CURRENT (A)
30
40
0
0.5
1
1.5
2
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
0.038
ID = 9.4A
VGS = 4.5V
ID = 4.7A
1.4
1.2
1
0.03
0.022
0.014
0.006
TA = 125oC
0.8
0.6
TA = 25oC
-50
-25
0
25
50
75
100
125
150
1
2
3
4
5
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
40
30
20
10
0
25oC
125oC
TA = -55oC
VGS = 0V
VDS = 5V
10
1
TA = 125oC
25oC
0.1
-55oC
0.01
0.001
0.0001
0.5
1
1.5
2
2.5
0
0.2
0.4
0.6
0.8
1
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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3
Typical Characteristics
2500
2000
1500
1000
500
10
VDS = 5V
f = 1MHz
VGS = 0 V
ID = 9.4A
10V
CISS
8
6
4
2
0
15V
COSS
CRSS
0
0
5
10
15
20
25
30
35
0
5
10
15
20
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
40
30
20
10
0
100
10
SINGLE PULSE
R
qJA =135°C/W
TA = 25°C
100µs
RDS(ON) LIMIT
1ms
10ms
100ms
1s
10s
DC
1
VGS = 10V
SINGLE PULSE
R
qJA = 135oC/W
TA = 25oC
0.1
0.01
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
qJA(t) = r(t) * RqJA
0.2
RqJA = 135 °C/W
0.1
0.1
0.05
P(pk)
0.02
t1
0.01
t2
0.01
TJ - TA = P * RqJA(t)
SINGLE PULSE
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
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4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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❖
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