FDS6911 [ONSEMI]
双 N 沟道,逻辑电平,PowerTrench® MOSFET,20V,7.5A,13mΩ;型号: | FDS6911 |
厂家: | ONSEMI |
描述: | 双 N 沟道,逻辑电平,PowerTrench® MOSFET,20V,7.5A,13mΩ 开关 光电二极管 晶体管 |
文件: | 总8页 (文件大小:305K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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December 2011
FDS6911
Dual N-Channel Logic Level PowerTrench® MOSFET
20V, 7.5A, 13mΩ
General Description
Features
These N-Channel Logic Level MOSFETs are produced
r
r
DS(on) = 13 mΩ @ VGS = 10 V
DS(on) = 17 mΩ @ VGS = 4.5 V
using
Fairchild
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
Fast switching speed
Low gate charge
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
D2
S1
G1
S2
G2
8
7
6
5
D1
D1
D2
D2
1
2
3
4
D2
Q1
Q2
D1
D1
G2
SO-8
S2
G1
S1
Pin 1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
20
Units
V
V
A
VGSS
Gate-Source Voltage
± 20
7.5
ID
Drain Current – Continuous
– Pulsed
(Note 1a)
20
PD
W
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
1.6
1.0
0.9
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1)
78
40
RθJA
°C/W
°C/W
Thermal Resistance, Junction-to-Case
RθJC
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
2500 units
FDS6911
FDS6911
13’’
12mm
www.fairchildsemi.com
©2011 Fairchild Semiconductor Corporation
FDS6911 Rev C1
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
20
V
VGS = 0 V,
ID = 250 μA
Breakdown Voltage Temperature
Coefficient
28
ΔBVDSS
ΔTJ
ID = 250 μA, Referenced to 25°C
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55°C
1
10
μA
nA
IGSS
Gate–Source Leakage
VGS = ±20 V, VDS = 0 V
±100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
1
1.8
3
V
VDS = VGS
,
ID = 250 μA
Gate Threshold Voltage
Temperature Coefficient
–4.7
ΔVGS(th)
ΔTJ
ID = 250 μA, Referenced to 25°C
mV/°C
rDS(on)
Static Drain–Source
On–Resistance
VGS = 10 V, ID = 7.5 A
VGS = 4.5 V, ID = 6.5 A
VGS = 10 V, ID = 7.5 A,TJ = 125°C
10.6
13
14.5
13
17
20
mΩ
ID(on)
gFS
On–State Drain Current
VGS = 10 V, VDS = 5 V
20
A
S
Forward Transconductance
VDS = 5 V,
ID = 7.5 A
36
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
1130
300
100
2.4
pF
pF
pF
Ω
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS = 15 mV, f = 1.0 MHz
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
9
5
18
10
42
14
24
13
ns
ns
VDD = 15 V, ID = 1 A,
V
GS = 10 V, RGEN = 6 Ω
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
26
7
ns
ns
Qg(TOT)
Qg
Total Gate Charge at Vgs=10V
Total Gate Charge at Vgs=5V
Gate–Source Charge
Gate–Drain Charge
17
9
nC
nC
nC
nC
V
DD = 15 V, ID = 7.5 A,
Qgs
Qgd
3.1
2.7
FDS6911 Rev C1
www.fairchildsemi.com
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
1.3
1.2
A
V
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 1.3 A
(Note 2)
trr
Diode Reverse Recovery Time
IF = 7.5 A, diF/dt = 100 A/µs
24
13
nS
nC
Qrr
Diode Reverse Recovery Charge
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°C/W when
mounted on a
0.5 in2 pad of 2 oz
copper
b) 125°C/W when
mounted on a .02 in2
pad of 2 oz copper
c) 135°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%
FDS6911 Rev C1
www.fairchildsemi.com
Typical Characteristics
20
2.6
2.2
1.8
1.4
1
VGS = 3.0V
VGS = 10.0V
4.5V
3.5V
16
12
8
4.0V
3.0V
3.5V
4.0
4.5V
5.0
6.0V
10.0V
4
0
0.6
0
0.25
0.5
0.75
1
1.25
1.5
0
4
8
12
16
20
ID, DRAIN CURRENT (A)
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.4
1.2
1
0.04
0.03
0.02
0.01
0
ID = 7.5A
VGS = 10V
ID = 3.8A
TA = 125oC
TA = 25oC
0.8
0.6
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
20
16
12
8
VGS = 0V
VDS = 5V
10
TA = 125oC
1
0.1
TA = 125oC
25oC
25oC
-55oC
0.01
-55oC
4
0.001
0.0001
0
0
0.2
0.4
0.6
0.8
1
1.2
1.5
2
2.5
3
3.5
4
VSD, BODY DIODE FORWARD VOLTAGE (V)
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6911 Rev C1
www.fairchildsemi.com
Typical Characteristics
10
1400
1200
1000
800
600
400
200
0
f = 1MHz
GS = 0 V
ID = 7.5A
V
8
Ciss
VDS = 10V
15V
6
20V
4
Coss
2
0
Crss
0
5
10
15
20
25
30
0
4
8
12
16
20
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
100
10
SINGLE PULSE
RθJA = 135°C/W
μ
100
RDS(ON) LIMIT
s
T
A = 25°C
1ms
10ms
100ms
1s
1
10s
DC
VGS = 10V
0.1
0.01
SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
RθJA(t) = r(t) * RθJA
RθJA = 135°C/W
0.1
0.1
0.05
0.02
0.01
P(pk)
t1
t2
0.01
SINGLE PULSE
T
J - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100 1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6911 Rev C1
www.fairchildsemi.com
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application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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