FDS6984AS [ONSEMI]
30V双通道笔记本电源N沟道PowerTrench® SyncFET™;
| 型号： | FDS6984AS |
| 厂家： | 
ONSEMI |
| 描述： | 30V双通道笔记本电源N沟道PowerTrench® SyncFET™ 开关 光电二极管 晶体管 |
| 文件： | 总11页 (文件大小：511K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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May 2008
FDS6984AS
Dual Notebook Power Supply N-Channel PowerTrench® SyncFET™
General Description
Features
The FDS6984AS is designed to replace two single
SO-8 MOSFETs and Schottky diode in synchronous
DC:DC power supplies that provide various peripheral
voltages for notebook computers and other battery
powered electronic devices. FDS6984AS contains two
unique 30V, N-channel, logic level, PowerTrench
MOSFETs designed to maximize power conversion
efficiency.
•
Q2:
Optimized to minimize conduction losses
Includes SyncFET Schottky diode
8.5A, 30V RDS(on) max= 20 mΩ @ VGS = 10V
RDS(on) max= 28 mΩ @ VGS = 4.5V
•
Q1:
Optimized for low switching losses
Low gate charge (8nC typical)
5.5A, 30V
RDS(on) max= 31 mΩ @ VGS = 10V
The high-side switch (Q1) is designed with specific
emphasis on reducing switching losses while the low-
side switch (Q2) is optimized to reduce conduction
losses. Q2 also includes a patented combination of a
RDS(on) max= 40 mΩ @ VGS = 4.5V
MOSFET monolithically integrated with
diode.
a
Schottky
•
RoHS Compliant
D1
D1
5
6
7
4
D2
Q1
3
2
1
D2
Q2
G1
8
S1
SO-8
G2
S2
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Q2
Q1
Units
VDSS
VGSS
ID
Drain-Source Voltage
30
±20
8.5
30
30
±20
5.5
20
V
V
A
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
PD
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
2
W
(Note 1a)
(Note 1b)
1.6
1
0.9
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
RθJA
°C/W
°C/W
RθJC
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6984AS
FDS6984AS
13”
12mm
2500 units
FDS6984AS Rev A1(X)
©2008 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Off Characteristics
BVDSS
IDSS
Drain-Source Breakdown
VGS = 0 V, ID = 1 mA
VGS = 0 V, ID = 250 µA
Q2
Q1
30
30
V
Voltage
Zero Gate Voltage Drain
Current
VDS = 24 V, VGS = 0 V
Q2
Q1
500
1
µA
Q2
Q1
All
2.3
79
mA
nA
nA
VDS = 24 V, VGS = 0 V, TJ = 125°C
IGSS
Gate-Body Leakage
V
GS = ±20 V, VDS = 0 V
±100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 1 mA
DS = VGS, ID = 250 µA
ID = 1 mA, Referenced to 25°C
ID = 250 uA, Referenced to 25°C
VGS = 10 V, ID = 8.5 A
Q2
Q1
Q2
Q1
1
1
1.7
1.8
–3
3
3
V
V
Gate Threshold Voltage
Temperature Coefficient
∆VGS(th)
∆TJ
mV/°C
mΩ
–4
RDS(on)
Static Drain-Source
On-Resistance
Q2
17
24
21
20
32
28
V
V
GS = 10 V, ID = 8.5 A, TJ = 125°C
GS = 4.5 V, ID = 7 A
VGS = 10 V, ID = 5.5 A
Q1
26
34
32
31
43
40
VGS = 10 V, ID = 5.5 A, TJ = 125°C
V
GS = 4.5 V, ID = 4.6 A
ID(on)
gFS
On-State Drain Current
VGS = 10 V, VDS = 5 V
Q2
Q1
Q2
Q1
30
20
A
S
Forward Transconductance
VDS = 5 V, ID = 8.5 A
VDS = 5 V, ID = 5.5 A
25
18
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
530
420
170
120
60
50
3.1
2.2
pF
pF
pF
Ω
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS = 15mV, f = 1.0 MHz
FDS6984AS Rev A1 (X)
Electrical Characteristics (continued)
Symbol Parameter Test Conditions
Switching Characteristics (Note 2)
TA = 25°C unless otherwise noted
Type Min Typ Max Units
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Qg(TOT)
Qg
Turn-On Delay Time
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
8
9
5
16
18
10
12
37
35
8
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
nC
Turn-On Rise Time
V
DD = 15 V, ID = 1 A,
6
Turn-Off Delay Time
Turn-Off Fall Time
23
22
4
2
9
10
7
11
13
13
4
3
10
8
5
4
1.5
1.3
1.9
1.5
VGS = 10V, RGEN = 6 Ω
4
Turn-On Delay Time
Turn-On Rise Time
18
19
14
20
24
24
8
VDD = 15 V, ID = 1 A,
Turn-Off Delay Time
Turn-Off Fall Time
V
GS = 4.5V, RGEN = 6 Ω
6
Total Gate Charge, Vgs = 10V
Total Gate Charge, Vgs = 5V
Gate-Source Charge
Gate-Drain Charge
14
11
8
Q2:
V
DS = 15 V, ID = 8.5 A
6
Qgs
Qgd
Q1:
V
DS = 15 V, ID = 5.5 A
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Q2
Q1
Q2
3.0
1.3
A
ns
trr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
IF = 10A,
dIF/dt = 300 A/µs
13
6
(Note 3)
Qrr
trr
nC
ns
Q1
IF = 5.5A,
dIF/dt = 100 A/µs
17
6
(Note 3)
Qrr
VSD
nC
V
Drain-Source Diode Forward VGS = 0 V, IS = 2.3 A
Voltage VGS = 0 V, IS = 1.3 A
(Note 2)
(Note 2)
Q2
Q1
0.6
0.8
0.7
1.2
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
78°C/W when
mounted on a
0.5in2 pad of 2
oz copper
b)
125°C/W when
mounted on a
0.02 in2 pad of
2 oz copper
c)
135°C/W when
mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. See “SyncFET Schottky body diode characteristics” below.
3. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS6984AS Rev A 1(X)
Typical Characteristics: Q2
2
1.8
1.6
1.4
1.2
1
30
VGS = 3.0V
VGS = 10V
6.0V
3.5V
25
20
15
10
5
4.0V
4.5V
3.0V
3.5V
4.0V
4.5V
5.0V
6.0V
10V
2.5V
0
0.8
0
0.5
1
1.5
2
2.5
3
150
4
0
5
10
15
20
25
30
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.06
0.05
0.04
0.03
0.02
0.01
1.6
ID = 8.5A
GS = 10V
ID = 4.25A
V
1.45
1.3
1.15
1
TA = 125oC
TA = 25oC
0.85
0.7
-50
-25
0
25
50
75
100
125
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
30
25
20
15
10
5
VGS = 0V
VDS = 5V
10
1
0.1
TA = 125oC
25oC
TA = 125oC
-55oC
-55oC
25oC
0.01
0.001
0
1
1.5
2
2.5
3
3.5
0
0.2
0.4
0.6
0.8
1
V
GS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6984AS Rev A1 (X)
Typical Characteristics: Q2
10
800
600
400
200
0
f = 1MHz
VGS = 0 V
ID =8.5A
8
VDS = 10V
Ciss
20V
6
15V
4
Coss
2
0
Crss
0
2
4
6
8
10
12
0
5
10
15
20
25
30
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
50
40
30
20
10
0
RDS(ON) LIMIT
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
100 s
µ
1ms
10
10ms
100ms
1s
10s
1
DC
VGS = 10V
0.1
0.01
SINGLE PULSE
RθJA = 135oC/W
T
A = 25oC
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
V
DS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
FDS6984AS Rev A1 (X)
Typical Characteristics Q1
2.4
2.2
2
20
VGS = 10V
6.0V
4.0V
VGS = 3.0V
4.5V
3.5V
16
12
8
1.8
1.6
1.4
1.2
1
3.5V
4.0V
3.0V
4.5V
5.0V
6.0V
4
10V
2.5V
0.8
0
0
5
10
ID, DRAIN CURRENT (A)
15
20
0
0.5
1
1.5
2
2.5
3
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. On-Region Characteristics.
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
0.1
1.6
ID = 5.5A
VGS = 10V
ID = 2.75A
1.4
1.2
1
0.08
0.06
0.04
0.02
TA = 125oC
0.8
0.6
TA = 25oC
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 13. On-Resistance Variation with
Temperature.
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
100
20
16
12
8
VGS = 0V
VDS = 5V
10
1
TA = 125oC
0.1
25oC
-55oC
0.01
TA = 125oC
-55oC
4
0.001
25oC
0.0001
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.5
1.5
2.5
3.5
4.5
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 15. Transfer Characteristics.
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6984AS Rev A1 (X)
Typical Characteristics Q1
600
500
400
300
200
100
0
10
f = 1MHz
VGS = 0 V
ID = 5.5A
8
VDS = 10V
20V
Ciss
6
15V
4
Coss
2
0
Crss
0
5
10
15
20
0
2
4
6
8
10
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 17. Gate Charge Characteristics.
Figure 18. Capacitance Characteristics.
100
50
40
30
20
10
0
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
RDS(ON) LIMIT
100
1ms
µ
s
10
1
10ms
100ms
1s
10s
DC
VGS = 10V
0.1
0.01
SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 19. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * Rθ
JA
0.2
RθJA = 135°C/W
0.1
0.1
0.05
0.02
P(pk)
t1
0.01
t2
0.01
SINGLE PULSE
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6984AS Rev A1 (X)
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 22
shows the reverse recovery characteristic of the
FDS6984AS.
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
0.01
125oC
0.001
100oC
0.0001
0.00001
25oC
0.000001
0
10
20
30
VDS, REVERSE VOLTAGE (V)
Figure 24. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
10nS/DIV
Figure 22. FDS6984AS SyncFET body
diode reverse recovery characteristic.
For comparison purposes, Figure 23 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6984A).
0V
10nS/DIV
Figure 23. Non-SyncFET (FDS6984A) body
diode reverse recovery characteristic.
FDS6984AS Rev A1 (X)
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global
subsidianries, and is not intended to be an exhaustive list of all such trademarks.
ACEx®
FPS™
PDP-SPM™
The Power Franchise®
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
F-PFS™
Power-SPM™
PowerTrench®
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
GTO™
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
Saving our world 1mW at a time™ TinyPWM™
EZSWITCH™ *
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SuperMOS™
®
TinyWire™
µSerDes™
™
®
MicroPak™
Fairchild®
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
UHC®
Ultra FRFET™
UniFET™
VCX™
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
OPTOPLANAR®
VisualMax™
®
FastvCore™
tm
FlashWriter®
*
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
in the labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Advance Information
Formative or In Design
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
Preliminary
First Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
This datasheet contains specifications on a product that is discontinued by
Fairchild Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I34
FDS6984AS Rev.A1(X)
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specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
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FDS6984SD84Z
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