FDS8447 [ONSEMI]
N 沟道，PowerTrench® MOSFET，40V，12.8A，10.5mΩ;
| 型号： | FDS8447 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，40V，12.8A，10.5mΩ PC 脉冲 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：480K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
November 2006
FDS8447
tm
Single N-Channel PowerTrench® MOSFET
40V, 12.8A, 10.5mΩ
Features
General Description
This single N-Channel MOSFET is produced using
Fairchild Semiconductor’s advanced PowerTrench®
process that has been especially tailored to minimize the
on-state resistance and yet maintain superior switching
performance.
Max rDS(on) = 10.5mΩ at VGS = 10V, ID = 12.8A
Max rDS(on) = 12.3mΩ at VGS = 4.5V, ID = 11.4A
Low gate charge
High performance trench technology for extremely low
rDS(on)
Applications
High power and current handling capability
RoHS compliant
DC - DC conversion
D
D
D
G
S
S
S
D
D
D
D
5
6
7
8
4
3
2
1
D
G
SO-8
S
S
S
Pin 1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
40
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
V
V
±20
(Note 1a)
12.8
50
ID
A
EAS
PD
Drain-Source Avalanche Energy
(Note 3)
(Note 1a)
(Note 1b)
150
mJ
W
Power Dissipation for Single Operation
2.5
1
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to 150
°C
Thermal Characteristics
RθJA
RθJC
Thermal Resistance-Single operation, Junction to Ambient
Thermal Resistance, Junction to Case
(Note 1a)
(Note 1)
50
25
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
FDS8447
FDS8447
13’’
12mm
2500 units
©2006 Fairchild Semiconductor Corporation
FDS8447 Rev. B
1
www.fairchildsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V
40
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, referenced to 25°C
VDS = 32V, VGS = 0V
TJ = 55°C
VGS = ±20V, VDS = 0V
34
mV/°C
1
µA
µA
nA
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
10
±100
On Characteristics (Note 2)
VGS(th)
Gate to Source Threshold Voltage VGS = VDS, ID = 250µA
1
1.8
-5
3
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
ID = 250µA, referenced to 25°C
Temperature Coefficient
mV/°C
VGS = 10V, ID = 12.8A
9
10
10.5
12.3
15
rDS(on)
gFS
Drain to Source On Resistance
Forward Transconductance
VGS = 4.5V, ID = 11.4A
mΩ
VGS = 10V, ID = 12.8A,TJ = 125°C
VDS = 10V, ID = 12.8A
13
75.3
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
2000
250
150
1.3
2600
350
pF
pF
pF
Ω
VDS = 20V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
250
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
11
14
27
7
20
25
42
14
49
27
ns
ns
VDD = 20V, ID = 12.8A
VGS = 10V, RGEN = 4.5Ω
Rise Time
Turn-Off Delay Time
ns
Fall Time
ns
Qg
Total Gate Charge at VGS = 10V
Total Gate Charge at VGS = 5V
Gate to Source Gate Charge
Gate to Drain “Miller”Charge
35
19
6
nC
nC
nC
nC
Qg
VDS = 20V, ID = 12.8A,
Qgs
Qgd
7
Drain-Source Diode Characteristics and Maximum Ratings
VSD
trr
Source to Drain Diode Forward Voltage VGS = 0V, IS = 12.8A (note 2)
0.84
19
1.2
29
19
V
Reverse Recovery Time
IF = 12.8A, diF/dt = 100A/µs
Reverse Recovery Charge
ns
nC
Qrr
9.5
Notes:
1: R
is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
θJA
drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
θJA
θJC
a) 50°C/W when
mounted on a 1in
pad of 2 oz copper
b) 125°C/W when mounted on a
minimum pad .
2
Scale 1:1 on letter size paper
2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
3: Starting T = 25°C, L = 3mH, I = 10A, V = 40V, V = 10V.
J
AS
DD
GS
FDS8447 Rev.B
2
www.fairchildsemi.com
Typical Characteristics TJ = 25°C unless otherwise noted
50
40
30
20
10
0
3.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 3V
2.5
2.0
1.5
1.0
0.5
V
=10V
GS
V
= 4.5V
= 3.5V
GS
V
GS
VGS = 3.5V
VGS = 4.5V
V
= 3V
GS
VGS = 10V
40
0.0
0.4
0.8
1.2
1.6
2.0
0
10
20
30
50
V
, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT(A)
DS
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance vs Drain
Current and Gate Voltage
1.8
25
ID = 12.8A
GS = 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
I
D
= 12.8A
V
1.6
1.4
1.2
1.0
0.8
0.6
20
15
10
5
T
= 125oC
= 25oC
J
T
J
-50 -25
0
25
50
75
100 125 150
2
4
6
8
10
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance vs Junction
Temperature
Figure 4. On-Resistance vs Gate to Source
Voltage
50
100
PULSE DURATION = 80µs
V
GS
= 0V
DUTY CYCLE = 0.5%MAX
40
10
1
V
= 5V
DS
T = 150oC
J
30
20
10
0
T = 150oC
J
T
J
= 25oC
0.1
T
= 25oC
J
T
J
= -55oC
0.01
1E-3
T
= -55oC
3.5
J
1.0
1.5
2.0
2.5
3.0
4.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs Source Current
FDS8447 Rev.B
3
www.fairchildsemi.com
Typical Characteristics TJ = 25°C unless otherwise noted
10
8
104
V
DD
= 10V
C
iss
103
102
101
V
= 20V
DD
6
C
oss
V
DD
= 30V
4
C
rss
2
f = 1MHz
= 0V
V
GS
0
40
0.1
1
10
0
10
20
30
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE(nC)
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
15
12
16
13
10
7
V
= 10V
GS
TJ = 25oC
9
6
3
V
= 4.5V
GS
TJ = 125oC
4
R
θJA
= 50oC/W
50
0
25
1
0.01
75
100
125
150
0.1
1
10
100
TA, AMBIENT TEMPERATURE (oC)
tAV, TIME IN AVALANCHE(ms)
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain Current vs
Ambient Temperature
100
2000
1000
100us
VGS = 10V
10
1
1ms
100
SINGLE PULSE
R
T
= 125°C/W
= 25°C
θJA
10ms
100ms
1s
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
A
10
0.1
SINGLE PULSE
T
= MAX RATED
= 25OC
J
10s
SINGLE PULSE
T
A
DC
1
0.01
10-4
10-3
10-2
10-1
100
101
102
103
200
100
0.01
0.1
1
10
t, PULSE WIDTH (s)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
FDS8447 Rev.B
4
www.fairchildsemi.com
Typical Characteristics TJ = 25°C unless otherwise noted
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
(PK)
0.01
t
1
t
2
SINGLE PULSE
Rθ (t) = r(t)*Rθ
JA
JA
JA
o
1E-3
Rθ = 125 C/W
T -T =P*Rθ
J
A
JA
DUTY FACTOR: D = t /t
1
2
0.0002
10-4
10-3
10-2
10-1
100
101
102
103
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
FDS8447 Rev.B
5
www.fairchildsemi.com
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Rev. I22
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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
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