FDS8449 [ONSEMI]
40V N 沟道 PowerTrench® MOSFET 7.6A，29mΩ;
| 型号： | FDS8449 |
| 厂家： | 
ONSEMI |
| 描述： | 40V N 沟道 PowerTrench® MOSFET 7.6A，29mΩ PC 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：239K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – N-Channel,
POWERTRENCH)
SOIC8
CASE 751EB
40 V, 7.6 A, 29 mW
FDS8449, FDS8449-G
D
D
D
D
5
6
7
8
G
S
S
S
4
3
2
1
General Description
These N−Channel MOSFETs are produced using onsemi’s
advanced POWERTRENCH process that has been especially tailored
to minimize on−state resistance and yet maintain superior switching
performance.
Features
MARKING DIAGRAM
• 7.6 A, 40 V
R
R
= 29 mW @ V = 10 V
GS
DS(on)
= 36 mW @ V = 4.5 V
DS(on)
GS
• High Power Handling Capability in a Widely Used Surface Mount
Package
• Pb−Free, Halide Free and RoHS Compliant
FDS8449
ALYW
$Y&Z&2&K
FDS
8449
ABSOLUTE MAXIMUM RATINGS
T = 25°C unless otherwise noted.
A
Symbol
Parameter
Ratings
40
Unit
V
FDS8449
FDS8449−G
V
DSS
GSS
Drain to Source Voltage
Gate to Source Voltage
FDS8449
= Specific Device Code
V
20
V
A
= Assembly Site
L
= Wafer Lot Number
= Assembly Start Week
= onsemi Logo
= Assembly Plant Code
= 2−Digit Code Format
= 2−Digits Lot Run Traceability Code
I
Drain Current
− Continuous (Note 1a)
− Pulsed
A
D
YW
$Y
&Z
&2
&K
7.6
50
P
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
W
D
2.5
1
T , T
Operating and Storage Junction
Temperature Range
−55 to +150
°C
J
STG
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
†
Device
Package
Shipping
FDS8449
SOIC8
2500 /
(Pb−Free/
Halide Free)
Tape & Reel
THERMAL CHARACTERISTICS
FDS8449−G
SOIC8
(Pb−Free/
Halide Free)
2500 /
Tape & Reel
Symbol
Parameter
Ratings
Unit
R
Thermal Resistance,
Junction to Ambient (Note 1a)
50
°C/W
q
JA
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
R
Thermal Resistance,
125
25
°C/W
°C/W
q
JA
Junction to Ambient (Note 1b)
R
Thermal Resistance,
Junction to Case (Note 1)
q
JC
© Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
March, 2022 − Rev. 3
FDS8449/D
FDS8449, FDS8449−G
ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted.
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
DRAIN−SOURCE AVALANCHE RATINGS (Note 3)
E
Drain to Source Avalanche Energy
Drain to Source Avalanche Current
V
DD
= 40 V, I = 7.3 A, L = 1 mH
−
−
−
27
mJ
A
AS
D
I
AS
7.3
−
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
40
−
−
−
V
DSS
D
GS
Breakdown Voltage Temperature
Coefficient
= 250 mA,
Referenced to 25°C
−
34
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
Gate–Body Leakage
V
V
= 32 V, V = 0 V
−
−
−
−
1
mA
DSS
DS
GS
I
=
20 V, V = 0 V
100
nA
GSS
GS
DS
ON CHARACTERISTICS (Note 2)
V
Gate Threshold Voltage
V
I
= V , I = 250 mA
1
1.9
3
V
GS(th)
DS
GS D
Gate Threshold Voltage
Temperature Coefficient
= 250 mA, Referenced to 25°C
−
−5
−
mV/°C
DVGS(th)
DTJ
D
R
Static Drain to Source On–Resistance
I
I
I
= 7.6 A, V = 10 V,
−
−
−
21
26
29
29
36
43
mW
DS(on)
D
D
D
GS
= 6.8 A, V = 4.5 V
GS
= 7.6 A, V = 10 V,
GS
T = 125°C
J
g
FS
Forward Transconductance
V
DS
= 10 V, I = 7.6 A
−
21
−
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 20 V, V = 0 V,
−
−
−
−
760
100
60
−
−
−
−
pF
iss
DS
GS
f = 1.0 MHz
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
f = 1.0 MHz
1.2
W
G
SWITCHING CHARACTERISTICS (Note 2)
t
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
V
= 20 V, I = 1 A,
−
−
−
−
−
−
−
9
5
18
10
17
6
ns
d(on)
DD
GS
D
= 10 V, R = 6 W
GS
t
r
t
23
3
d(off)
t
f
Q
V
DS
V
GS
= 20 V, I = 7.6 A,
7.7
2.4
2.8
11
−
nC
g
D
= 5 V
Q
gs
gd
Q
−
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Drain to Source Diode Forward Voltage
Diode Reverse Recovery Time
V
= 0 V, I = 2.1 A (Note 2)
−
−
−
0.76
17
7
1.2
−
V
SD
GS
S
t
I = 7.6 A, d /d = 100 A/ms
F
ns
nC
rr
IF
t
Q
Diode Reverse Recovery Charge
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
q
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
q
q
CA
JC
a) 50°C/W when mounted
b) 125°C/W when mounted
on a minimum pad.
2
on a 1 in pad of 2 oz. copper.
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
3. BV(avalanche) Single−Pulse rating is guaranteed if device is operated within the UIS SOA boundary of the device.
www.onsemi.com
2
FDS8449, FDS8449−G
TYPICAL CHARACTERISTICS
20
16
12
3
2.6
2.2
V
= 10 V
V
GS
= 3.0 V
GS
4.0 V
3.5 V
6.0 V
4.5 V
1.8
8
3.5 V
1.4
4.0 V
3.0 V
4.5 V
6.0 V
4
0
10 V
1
0.6
4
0
0.5
1
1.5
2
2.5
0
8
12
16
20
V
DS
, Drain to Source Voltage (V)
I , Drain Current (A)
D
Figure 1. On Region Characteristics
Figure 2. On−Resistance Variation with Drain
Current and Gate Voltage
1.6
1.4
1.2
1
0.07
I
D
= 3.5 A
I
V
= 7.6 A
D
= −10 V
GS
0.06
0.05
0.04
0.03
T = 125°C
A
T = 25°C
A
0.8
0.6
0.02
0.01
10
−50 −25
0
25
50
75
100 125 150
2
4
6
8
T , Junction Temperature (°C)
J
V
GS
, Gate to Source Voltage (V)
Figure 3. On−Resistance Variation with Temperature
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
100
10
1
20
V
GS
= 0 V
V
DS
= 10 V
15
10
T = 125°C
A
0.1
25°C
T = 125°C
A
0.01
−55°C
5
0
−55°C
0.001
25°C
0.0001
1
1.5
V
2
2.5
3
3.5
0
0.2
V
0.4
0.6
0.8
1.0
1.2
, Body Diode Forward Voltage (V)
, Gate to Source Voltage (V)
SD
GS
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
www.onsemi.com
3
FDS8449, FDS8449−G
TYPICAL CHARACTERISTICS (continued)
1000
10
8
I
D
= 7.6 A
f = 1 MHz
= 0 V
V
GS
V
= 10 V
30 V
DS
800
600
400
200
0
C
iss
6
4
2
0
20 V
C
oss
C
rss
0
4
8
12
16
0
5
10
15
20
25
30
35
40
Q , Gate Charge (nC)
g
V
DS
, Drain to Source Voltage (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
100
10
1
50
40
30
20
Single Pulse
R
DS(ON) LIMIT
100 ms
1 ms
10 ms
R
= 125°C/W
q
JA
T = 25°C
A
100 ms
1 s
10 s
DC
V
= 10 V
GS
0.1
Single Pulse
= 125°C/W
10
0
R
q
JA
T = 25°C
A
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain−Source Voltage (V)
t , Time (s)
1
Figure 10. Single Pulse Maximum Power
Dissipation
Figure 9. Maximum Safe Operating Area
50
100
Single Pulse
R
= 125°C/W
q
JA
T = 25°C
A
40
30
20
10
T = 25°C
J
10
1
0.01
0
10
0.001
0.01
0.1
1
10
100
1000
0.1
t , Time in Avalanche (ms)
AV
1
t , Time (s)
1
Figure 12. Unclamped Inductive Switching
Capability
Figure 11. Single Pulse Maximum Peak Current
www.onsemi.com
4
FDS8449, FDS8449−G
TYPICAL CHARACTERISTICS (continued)
1
D = 0.5
0.2
0.1
R
R
(t) = r(t) × R
= 125°C/W
q
q
q
JA
JA
JA
0.1
0.05
P
DM
0.02
0.01
t
1
0.01
t
2
T − T = P × R (t)
q
JA
J
A
Single Pulse
Duty Factor D = t / t
1
2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Time (s)
1
Figure 13. Transient Thermal Response Curve
NOTE: Transient thermal response will change depending on the circuit board design.
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC8
CASE 751EB
ISSUE A
DATE 24 AUG 2017
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13735G
SOIC8
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
SI9130DB
5- and 3.3-V Step-Down Synchronous ConvertersWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1-E3
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135_11
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
©2020 ICPDF网 联系我们和版权申明