FDS86540 [ONSEMI]

N 沟道，PowerTrench® MOSFET，60V，18A，4.5mΩ;


型号：	FDS86540
厂家：	ONSEMI
描述：	N 沟道，PowerTrench® MOSFET，60V，18A，4.5mΩ
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May 2012

FDS86540

N-Channel PowerTrench^®MOSFET

60 V, 18 A, 4.5 mΩ

Features

General Description

Max r_DS(on)= 4.5 mΩ at V_GS= 10 V, I_D= 18 A

Max r_DS(on)= 5.4 mΩ at V_GS= 8 V, I_D= 16.5 A

High performance trench technologh for extremely low r_DS(on)

This N-Channel MOSFET has been designed specifically to

improve the overall efficiency and to minimize switch node

ringing of DC/DC converters using either synchronous or

conventional switching PWM controllers.It has been optimized

for low gate charge, low r_DS(on), fast switching speed and body

diode reverse recovery performance.

High power and current handing capability in a widely used

surface mount package

100% UIL Tested

RoHS Compliant

Applications

Primary Switch in isolated DC-DC

Synchronous Rectifier

Load Switch

SO-8

Pin 1

MOSFET Maximum Ratings T_A= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous

-Pulsed

±20

I_D

120

194

5.0

E_AS

P_D

Single Pulse Avalanche Energy

Power Dissipation

(Note 3)

T_C= 25 °C

T_A= 25 °C

(Note 1)

Power Dissipation

(Note 1a)

2.5

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

(Note 1)

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

12 mm

Quantity

FDS86540

SO-8

13’’

2500 units

FDS86540 Rev. C

www.fairchildsemi.com

Electrical Characteristics T_J= 25 °C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BV_DSS

Drain to Source Breakdown Voltage

I_D= 250 μA, V_GS= 0 V

ΔBV_DSS

ΔT_J

Breakdown Voltage Temperature

Coefficient

_D= 250 μA, referenced to 25 °C

mV/°C

I_DSS

I_GSS

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

V_DS= 48 V, V_GS= 0 V

V_GS= ±20 V, V_DS= 0 V

μA

±100

On Characteristics

V_GS(th)

Gate to Source Threshold Voltage

V_GS= V_DS, I_D= 250 μA

3.1

-11

ΔV_GS(th)

ΔT_J

Gate to Source Threshold Voltage

Temperature Coefficient

_D= 250 μA, referenced to 25 °C

mV/°C

_GS= 10 V, I_D= 18 A

3.7

4.2

5.9

4.5

5.4

r_DS(on)

g_FS

Static Drain to Source On Resistance

Forward Transconductance

V_GS= 8 V, I_D= 16.5 A

mΩ

V_GS= 10 V, I_D= 18 A, T_J= 125 °C

V_DS= 10 V, I_D= 18 A

Dynamic Characteristics

C_iss

C_oss

C_rss

R_g

Input Capacitance

4820

1610

6410

2145

130

V_DS= 30 V, V_GS= 0 V,

f = 1 MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

0.6

Switching Characteristics

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Rise Time

7.1

V_DD= 30 V, I_D= 18 A,

_GS= 10 V, R_GEN= 6 Ω

Turn-Off Delay Time

Fall Time

Q_g

Total Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

V_GS= 0 V to 10 V

V_GS= 0 V to 8 V

Q_g

V_DD= 30 V,

_D= 18 A

Q_gs

Q_gd

Drain-Source Diode Characteristics

_GS= 0 V, I_S= 18 A

(Note 2)

0.8

0.7

1.3

1.2

V_SD

Source-Drain Diode Forward Voltage

V_GS= 0 V, I_S= 2 A

t_rr

Reverse Recovery Time

I_F= 18 A, di/dt = 100 A/μs

Q_rr

Reverse Recovery Charge

NOTES:

1. R

is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

is guaranteed by design while R is determined by

θCA

θJA

θJC

the user's board design.

a) 50 °C/W when mounted on a

1 in pad of 2 oz copper.

b) 125 °C/W when mounted on a

minimum pad.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. Starting T = 25 °C, L = 0.3 mH, I = 36 A, V = 54 V, V = 10 V.

FDS86540 Rev. C

www.fairchildsemi.com

Typical Characteristics T_J= 25 °C unless otherwise noted

120

= 10 V

= 8 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

= 6 V

V_GS= 5 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

V_GS= 5.5 V

V_GS= 6 V

= 5.5 V

V_GS= 8 V

= 5 V

V_GS= 10 V

120

I_D, DRAIN CURRENT (A)

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics

Figure2. N o r m a l i z e d O n - R e s i s ta n c e

vs Drain Current and Gate Voltage

1.7

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

I_D= 18 A

1.6

1.5

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

I_D= 18 A

V_GS= 10 V

T_J= 125 ^o

T_J= 25 ^o

-75 -50 -25

25 50 75 100 125 150

T_J, JUNCTION TEMPERATURE (^oC)

V_GS, GATE TO SOURCE VOLTAGE (V)

F i gu re 3 . N orma li zed On - Res is ta nc e

vs Junction Temperature

Figure4. On-Resistance vs Gate to

Source Voltage

120

200

100

V_GS= 0 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

V_DS= 5 V

T_J= 150 ^o

T_J= 25 ^oC

T_J= 150 ^o

0.1

T_J= 25 ^o

T_J= -55 ^o

0.01

T_J= -55 ^o

0.001

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V_GS, GATE TO SOURCE VOLTAGE (V)

V_SD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure6. Source to Drain Diode

Forward Voltage vs Source Current

FDS86540 Rev. C

www.fairchildsemi.com

Typical Characteristics T_J= 25 °C unless otherwise noted

10000

1000

100

C_iss

V_DD= 20 V

I_D= 18 A

V_DD= 30 V

C_oss

V_DD= 40 V

C_rss

f = 1 MHz

_GS= 0 V

0.1

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Q_g, GATE CHARGE (nC)

Figure 7. Gate Charge Characteristics

Figure8. C a p a c i t a n c e v s D r a i n

to Source Voltage

R_θJA= 50 ^oC/W

T_J= 25 ^oC

T_J= 100 ^oC

V_GS= 10 V

V_GS= 8 V

T_J= 125 ^o

0.01

100

125

150

0.1

100 300

T_A, AMBIENT TEMPERATURE (^oC)

t_AV, TIME IN AVALANCHE (ms)

Figure9. U n c l a m p e d I n d u c t i v e

Switching Capability

Figure10. Maximum Continuous Drain

Current vs Ambient Temperature

200

100

2000

SINGLE PULSE

R_θJA= 125 ^oC/W

1000

100

_A= 25 ^oC

100 μs

1 ms

THIS AREA IS

LIMITED BY r

DS(on)

10 ms

100 ms

SINGLE PULSE

T_J= MAX RATED

0.1

0.01

1 s

_θJA= 125 ^oC/W

10 s

_A= 25 ^oC

0.5

10^-4

10^-3

10^-2

t, PULSE WIDTH (sec)

10^-1

100 1000

0.01

0.1

100 300

V_DS, DRAIN to SOURCE VOLTAGE (V)

Figure 11. Forward Bias Safe

Operating Area

Figure 12. Single Pulse Maximum

Power Dissipation

FDS86540 Rev. C

www.fairchildsemi.com

Typical Characteristics T_J= 25 °C unless otherwise noted

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

NOTES:

DUTY FACTOR: D = t /t

SINGLE PULSE

R_θJA= 125 ^oC/W

PEAK T = P

x Z

x R

+ T

θJA

θJA A

0.001

0.0005

10^-4

10^-3

10^-2

10^-1

t, RECTANGULAR PULSE DURATION (sec)

100

1000

Figure 13. Junction-to-Ambient Transient Thermal Response Curve

FDS86540 Rev. C

www.fairchildsemi.com

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not

intended to be an exhaustive list of all such trademarks.

2Cool™

F-PFS™

FRFET

Global Power Resource

Green Bridge™

PowerTrench

PowerXS™

The Power Franchise

AccuPower™

AX-CAP™*

Programmable Active Droop™

BitSiC

QFET

TinyBoost™

TinyBuck™

TinyCalc™

Build it Now™

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CTL™

Green FPS™

Green FPS™ e-Series™

Gmax™

GTO™

IntelliMAX™

ISOPLANAR™

QS™

Quiet Series™

RapidConfigure™

™

TinyLogic

TINYOPTO™

TinyPower™

TinyPWM™

TinyWire™

Current Transfer Logic™

Saving our world, 1mW/W/kW at a time™

DEUXPEED

Marking Small Speakers Sound Louder SignalWise™

Dual Cool™

EcoSPARK

EfficentMax™

ESBC™

and Better™

MegaBuck™

MICROCOUPLER™

MicroFET™

SmartMax™

TranSiC

SMART START™

Solutions for Your Success™

TriFault Detect™

TRUECURRENT *

SPM

μSerDes™

MicroPak™

STEALTH™

MicroPak2™

MillerDrive™

MotionMax™

Motion-SPM™

mWSaver™

OptoHiT™

SuperFET

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

Fairchild

UHC

Fairchild Semiconductor

FACT Quiet Series™

Ultra FRFET™

UniFET™

VCX™

VisualMax™

VoltagePlus™

XS™

SupreMOS

FACT

SyncFET™

Sync-Lock™

®*

FAST

OPTOLOGIC

OPTOPLANAR

FastvCore™

FETBench™

FlashWriter

FPS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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Rev. I61

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FDS86540 Rev. C

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

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FDS86540 [ONSEMI]

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