FDS8842NZ [ONSEMI]
N 沟道，PowerTrench® MOSFET，40V，14.9A，7.0mΩ;
| 型号： | FDS8842NZ |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，40V，14.9A，7.0mΩ 开关 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：409K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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February 2009
FDS8842NZ
N-Channel PowerTrench® MOSFET
40 V, 14.9 A, 7.0 mΩ
Features
General Description
Max rDS(on) = 7.0 mΩ at VGS = 10 V, ID = 14.9 A
Max rDS(on) = 11.6 mΩ at VGS = 4.5 V, ID = 11.6 A
HBM ESD protection level of 4.4 kV typical(note 3)
The FDS8842NZ has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance.
High performance trench technology for extremely low rDS(on)
and fast switching
Applications
Synchronous Buck for Notebook Vcore and Server
Notebook Battery
High power and current handling capability
Termination is Lead-free and RoHS Compliant
Load Switch
D
D
D
G
D
D
D
D
S
S
G
SO-8
S
S
D
S
Pin 1
S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
40
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
V
V
±20
14.9
ID
A
93
EAS
PD
Single Pulse Avalanche Energy
Power Dissipation
(Note 4)
(Note 1a)
(Note 1b)
253
mJ
W
TA = 25 °C
TA = 25 °C
2.5
Power Dissipation
1.0
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
25
50
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
12 mm
Quantity
FDS8842NZ
FDS8842NZ
SO8
13 ’’
2500 units
1
©2009 Fairchild Semiconductor Corporation
FDS8842NZ Rev.C
www.fairchildsemi.com
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 µA, VGS = 0 V
40
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
I
D = 250 µA, referenced to 25 °C
35
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 32 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
1
µA
µA
±10
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 µA
1.0
1.9
-6
3.0
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
D = 250 µA, referenced to 25 °C
mV/°C
V
GS = 10 V, ID = 14.9 A
5.6
6.7
8.9
111
7.0
11.6
11.1
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
VGS = 4.5 V, ID = 11.6 A
mΩ
VGS = 10 V, ID = 14.9 A, TJ =125 °C
VDS = 5 V, ID = 14.9 A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
2890
340
220
0.8
3845
455
pF
pF
pF
Ω
VDS = 15 V, VGS = 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
330
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
13
7
23
14
54
10
73
38
ns
ns
VDD = 20 V, ID = 14.9 A,
V
GS = 10 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
34
5
ns
ns
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0 V to 10 V
VGS = 0 V to 5 V
52
27
8.6
9.7
nC
nC
nC
nC
VDD = 20 V,
D = 14.9 A
Qg
I
Qgs
Qgd
Drain-Source Diode Characteristics
V
GS = 0 V, IS = 14.9 A
0.8
0.7
26
1.2
1.2
42
VSD
Source to Drain Diode Forward Voltage
V
VGS = 0 V, IS = 2.1 A
trr
Reverse Recovery Time
ns
IF = 14.9 A, di/dt = 100 A/µs
Qrr
Reverse Recovery Charge
15
27
nC
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R is determined by
θCA
θJA
θJC
the user's board design.
a) 50 °C/W when mounted on a
1 in pad of 2 oz copper.
b) 125 °C/W when mounted on a
minimum pad.
2
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied.
4. Starting T = 25 °C, L = 3 mH, I = 13 A, V = 40 V, V = 10 V.
J
AS
DD
GS
www.fairchildsemi.com
©2009 Fairchild Semiconductor Corporation
FDS8842NZ Rev.C
2
Typical Characteristics TJ = 25 °C unless otherwise noted
60
5
4
3
2
1
0
VGS = 10 V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
µs
VGS = 3 V
VGS = 6 V
50
40
VGS = 4.5 V
VGS = 3.5 V
VGS = 3.5 V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
µs
30
20
10
0
VGS = 4 V
VGS = 4.5 V
VGS = 10 V
VGS = 4 V
VGS = 6 V
40
VGS = 3 V
0
0.3
VDS
0.6
0.9
1.2
1.5
0
10
20
30
50
60
,
DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
1.8
20
ID = 14.9 A
VGS = 10 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
1.6
1.4
1.2
1.0
0.8
0.6
15
10
5
ID = 14.9 A
TJ = 125 o
C
TJ = 25 oC
0
-75 -50 -25
TJ
0
25 50 75 100 125 150
2
4
6
8
10
,
JUNCTION TEMPERATURE ( )
oC
VGS, GATE TO SOURCE VOLTAGE (V)
F i gu re 3 . N orma li zed On - Res is ta nc e
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
60
50
40
30
20
10
0
60
10
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
VGS = 0 V
VDS = 5 V
TJ = 150 oC
TJ = 25 o
C
TJ = 150 o
TJ = 25 o
TJ = -55 oC
C
1
C
TJ = -55 o
C
0.1
0.2
0
1
2
3
4
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
www.fairchildsemi.com
©2009 Fairchild Semiconductor Corporation
FDS8842NZ Rev.C
3
Typical Characteristics TJ = 25 °C unless otherwise noted
5000
1000
10
ID = 14.9 A
Ciss
8
VDD = 15 V
6
VDD = 20 V
VDD = 25 V
4
Coss
2
0
f = 1 MHz
= 0 V
Crss
V
GS
100
0.1
1
10
40
0
10
20
30
40
50
60
VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
30
10-3
10-5
10-7
10-9
VGS = 0 V
10
TJ = 125 oC
TJ = 25 o
C
TJ = 125 o
C
TJ = 100 o
C
TJ = 25 o
C
1
0.001
0.01
0.1
1
10
100
1000
0
5
10
15
20
25
30
tAV, TIME IN AVALANCHE (ms)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure9. Unclamped Inductive
Switching Capability
Figure 10. Igss vs Vgs
100
10
2000
1000
VGS = 10 V
1 ms
SINGLE PULSE
RθJA = 125 oC/W
A = 25 oC
10 ms
100
10
T
100 ms
1
THIS AREA IS
LIMITED BY r
DS(on)
1 s
SINGLE PULSE
TJ = MAX RATED
0.1
RθJA = 125 oC/W
10 s
DC
A = 25 oC
1
T
0.01
0.5
10-3
10-2
10-1
t, PULSE WIDTH (sec)
1
10
0.01
0.1
1
10
100 200
100
1000
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
www.fairchildsemi.com
©2009 Fairchild Semiconductor Corporation
FDS8842NZ Rev.C
4
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
t
0.01
1
t
2
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
RθJA = 125 oC/W
1
2
PEAK T = P
J
x Z x R + T
θJA θJA A
DM
0.001
0.0005
10-3
10-2
10-1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
www.fairchildsemi.com
©2009 Fairchild Semiconductor Corporation
FDS8842NZ Rev.C
5
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
FRFET®
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
Global Power ResourceSM
Green FPS™
TinyBoost™
TinyBuck™
Green FPS™ e-Series™
GTO™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™*
™*
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
™
Saving our world, 1mW/W/kW at a time™
SmartMax™
TinyWire™
SMART START™
TriFault Detect™
TRUECURRENT™*
μSerDes™
SPM®
®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
Fairchild®
Motion-SPM™
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
OPTOLOGIC®
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
OPTOPLANAR®
®
FAST®
SyncFET™
FastvCore™
®
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
*
FlashWriter®
*
The Power Franchise®
FPS™
F-PFS™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Datasheet Identification Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Advance Information
Preliminary
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
First Production
Full Production
Not In Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
No Identification Needed
Obsolete
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I39
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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