FDS8858CZ [ONSEMI]
双 N 和 P 沟道，PowerTrench® MOSFET，30V;
| 型号： | FDS8858CZ |
| 厂家： | 
ONSEMI |
| 描述： | 双 N 和 P 沟道，PowerTrench® MOSFET，30V PC 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总11页 (文件大小：538K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Is Now
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDS8858CZ
Dual N & P-Channel PowerTrench® MOSFET
N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ
General Description
Features
These dual N and P-Channel enhancement
mode power
MOSFETs are produced using ON Semiconductor’s
advanced PowerTrench process that has been especially
Q1: N-Channel
Max rDS(on) = 17mΩ at VGS = 10V, ID = 8.6A
Max rDS(on) = 20mΩ at VGS = 4.5V, ID = 7.3A
tailored to minimize on-state
superior switching performance.
resistance and yet maintain
Q2: P-Channel
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and fast
switching are required.
Max rDS(on) = 20.5mΩ at VGS = -10V, ID = -7.3A
Max rDS(on) = 34.5mΩ at VGS = -4.5V, ID = -5.6A
High power and handing capability in a widely used surface
mount package
Applications
Inverter
Fast switching speed
Synchronous Buck
D2
D2
Q2
4
3
2
1
D2
D2
D1
D1
5
6
7
8
G2
S2
G1
S1
D1
D1
SO-8
Q1
G2
S2
G1
S1
Pin 1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Q1
30
Q2
-30
±25
-7.3
-20
11
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
±20
8.6
20
Drain Current
- Continuous
- Pulsed
Single Pulse Avalanche Energy
TA = 25°C
ID
A
EAS
(Note 3)
50
mJ
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
2.0
1.6
0.9
PD
TA = 25°C
TA = 25°C
(Note 1a)
(Note 1c)
W
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
40
78
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13”
Tape Width
12mm
Quantity
FDS8858CZ
FDS8858CZ
SO-8
2500 units
©2011 Semiconductor Components Industries, LLC.
October-2017,Rev.3
Publication Order Number:
FDS8858CZ/D
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Off Characteristics
ID = 250μA, VGS = 0V
ID = -250μA, VGS = 0V
Q1
Q2
30
-30
BVDSS
Drain to Source Breakdown Voltage
V
mV/°C
μA
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250μA, referenced to 25°C
Q1
Q2
22
-22
I
D = -250μA, referenced to 25°C
V
DS = 24V, VGS = 0V
Q1
Q2
1
-1
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = -24V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS = ±25V, VDS = 0V
Q1
Q2
±10
±10
μA
On Characteristics
V
GS = VDS, ID = 250μA
Q1
Q2
1
-1
1.6
-2.1
3
-3
VGS(th)
Gate to Source Threshold Voltage
V
VGS = VDS, ID = -250μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250μA, referenced to 25°C
ID = -250μA, referenced to 25°C
Q1
Q2
-5.4
6.0
mV/°C
V
V
GS = 10V, ID = 8.6A
GS = 4.5V, ID = 7.3A
12.4
15.2
17.7
17.0
20.0
24.3
Q1
Q2
VGS = 10V, ID = 8.6A, TJ = 125°C
rDS(on)
Static Drain to Source On Resistance
mΩ
VGS = -10V, ID = -7.3A
VGS = -4.5V, ID = -5.6A
VGS = -10V, ID = -7.3A, TJ = 125°C
17.1
26.5
24.0
20.5
34.5
28.8
VDS = 5V, ID = 8.6A
Q1
Q2
27
21
gFS
Forward Transconductance
S
V
DS = -5V, ID = -7.3A
Dynamic Characteristics
Q1
Q2
905
1675
1205
2230
Q1
Ciss
Coss
Crss
Rg
Input Capacitance
pF
pF
pF
Ω
VDS = 15V, VGS = 0V, f = 1MHZ
Q1
Q2
180
290
240
390
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Q2
VDS = -15V, VGS = 0V, f = 1MHZ
Q1
Q2
110
260
165
390
Q1
Q2
1.3
4.4
f = 1MHz
Switching Characteristics
Q1
Q2
7
9
14
18
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
ns
ns
Q1
DD = 15V, ID = 8.6A,
VGS = 10V, RGEN = 6Ω
V
Q1
Q2
3
10
10
20
Q1
Q2
19
33
35
53
Q2
Turn-Off Delay Time
Fall Time
ns
VDD = -15V, ID = -7.3A,
VGS = -10V, RGEN = 6Ω
Q1
Q2
3
16
10
29
ns
Q1
Q2
17
33
24
46
Qg(TOT)
Qgs
Qgd
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
nC
nC
nC
Q1
VGS = 10V, VDD = 15V, ID = 8.6A
Q1
Q2
2.7
6.1
Q2
Q1
Q2
3.4
8.5
V
GS = -10V, VDD = -15V, ID = -7.3A
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Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Drain-Source Diode Characteristics
VGS = 0V, IS = 8.6A
VGS = 0V, IS = -7.3A
(Note 2) Q1
(Note 2) Q2
0.8
0.9
1.2
-1.2
VSD
trr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
Q1
Q2
25
28
38
42
Q1
ns
nC
IF = 8.6A, di/dt = 100A/s
Q2
IF = -7.3A, di/dt = 100A/s
Q1
Q2
19
22
29
33
Qrr
Reverse Recovery Charge
Notes:
1. R
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
θJA
θJC
is guaranteed by design while R
is determined by the user’s board design.
θCA
c) 135°C/W when
mounted on a
minimun pad
b) 125°C/W when
mounted on a 0.02 in
pad of 2 oz copper
a) 78°C/W when
mounted on a 0.5 in
pad of 2 oz copper
2
2
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
3. Starting T = 25°C, N-ch: L = 1mH, I = 10A, V = 27V, V = 10V; P-ch: L = 1mH, I = -4.7A, V = -27V, V = -10V.
J
AS
DD
GS
AS
DD
GS
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3
Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted
3.0
2.5
2.0
1.5
1.0
0.5
20
16
12
8
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
VGS = 3.0V
VGS = 10V
VGS = 4.5V
VGS = 3.5V
VGS = 3.0V
VGS = 3.5V
VGS = 4.5V
4
VGS = 10V
0
0
0
4
8
12
16
20
1
2
3
4
ID, DRAIN CURRENT(A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On- Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
1.6
35
I
= 8.6A
PULSE DURATION = 80μs
ID = 8.6A
D
DUTY CYCLE = 0.5%MAX
V
= 10V
GS
1.4
1.2
1.0
0.8
0.6
30
25
20
15
10
TJ = 125oC
TJ = 25oC
-75 -50 -25
0
25 50 75 100 125 150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
F i gu re 3 . N orma li zed On - Res is ta nc e
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
20
20
10
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
16
VGS = 0V
VDS = 5V
1
12
TJ = 150oC
TJ = 25oC
TJ = 25oC
0.1
8
TJ = 150oC
0.01
4
TJ = -55oC
TJ = -55oC
0.001
0
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1
2
3
4
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
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4
Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted
10
8
3000
ID = 8.6A
C
iss
1000
VDD = 15V
VDD = 10V
6
C
oss
VDD = 20V
4
C
rss
2
f = 1MHz
= 0V
100
50
V
GS
0
30
0.1
1
10
0
4
8
12
16
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE(nC)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
10-3
10-4
10-5
10-6
10-7
20
10
VDS = 0V
TJ = 125oC
TJ = 25oC
T = 25oC
J
T = 125oC
J
1
0.01
0.1
1
10
100
0
5
10
15
20
25
30
tAV, TIME IN AVALANCHE(ms)
VGS, GATE TO SOURCE VOLTAGE(V)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure 10. Gate Leakage Current vs Gate to
SourceVoltage
8
6
4
2
50
10
VGS = 10V
1ms
1
0.1
10ms
THIS AREA IS
LIMITED BY rDS(on)
100ms
1s
VGS = 4.5V
SINGLE PULSE
J = MAX RATED
T
10s
DC
R
θJA = 135oC/W
TA = 25oC
R
θJA = 78oC/W
0
25
0.01
50
75
100
125
150
0.1
1
10
80
TA, AMBIENT TEMPERATURE (oC)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Maximum Continuous Drain
Current vs Ambient Temperature
Figure12. Forward Bias Safe
Operating Area
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Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted
300
VGS = 10V
FOR TEMPERATURES
o
ABOVE 25 C DERATE PEAK
100
CURRENT AS FOLLOWS:
150 – T
A
I = I
------------------------
25
125
TA = 25oC
10
SINGLE PULSE
RθJA = 135oC/W
1
0.5
10-3
10-2
10-1
100
101
102
103
t, PULSE WIDTH (s)
Figure 13. Single Pulse Maximum Power Dissipation
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
SINGLE PULSE
RθJA = 135oC/W
0.01
0.0003
10-3
10-2
10-1
100
101
102
103
t, RECTANGULAR PULSE DURATION (s)
Figure 14. Transient Thermal Response Curve
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6
Typical Characteristics (Q2 P-Channel)TJ = 25°C unless otherwise noted
20
16
12
8
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
VGS = -10V
VGS = -3.5V
VGS = -5V
VGS = -4.5V
VGS = -4V
VGS = -3.5V
VGS = -4V
VGS = -4.5V
VGS = -5V
4
VGS = -3V
VGS = -10V
0
0
1
2
3
4
0
4
8
12
16
20
-ID, DRAIN CURRENT(A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 15. On- Region Characteristics
Figure 16. Normalized on-Resistance vs Drain
Current and Gate Voltage
1.6
60
ID = -7.3A
PULSE DURATION = 80μs
ID = -7.3A
VGS = -10V
DUTY CYCLE = 0.5%MAX
1.4
1.2
1.0
0.8
0.6
50
40
30
20
10
TJ = 125oC
TJ = 25oC
-75 -50 -25
0
25 50 75 100 125 150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 18. On-Resistance vs Gate to
Source Voltage
Figure 17. Normalized On- Resistance
vs Junction Temperature
30
10
20
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
16
VGS = 0V
1
0.1
VDS = -5V
12
TJ = 25oC
TJ = 150oC
8
0.01
TJ = 25oC
TJ =-55oC
TJ = -55oC
4
0.001
0.0001
TJ = 125oC
0
0
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 19. Transfer Characteristics
Figure 20. Source to Drain Diode
Forward Voltage vs Source Current
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Typical Characteristics(Q2 P-Channel)TJ = 25oC unless otherwise noted
10
4000
ID = -7.3A
Ciss
VDD = -10V
8
VDD = -15V
1000
6
VDD = -20V
Coss
4
Crss
2
f = 1MHz
= 0V
V
GS
0
100
0
7
14
21
28
35
0.1
1
10
30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-Q , GATE CHARGE(nC)
g
Figure 22. Capacitance vs Drain
to Source Voltage
Figure 21. Gate Charge Characteristics
10-3
10-4
10-5
10-6
10-7
10-8
20
VDS = 0V
10
TJ = 25oC
TJ = 125oC
TJ = 125oC
TJ = 25oC
1
0.01
0
5
10
15
20
25
30
0.1
1
10
30
-VGS, GATE TO SOURCE VOLTAGE(V)
tAV, TIME IN AVALANCHE(ms)
Figure 23. Unclamped Inductive
Switching Capability
Figure 24. Gate Leakage Current vs Gate to
Source Voltage
8
6
4
2
0
60
10
VGS = -10V
1ms
10ms
1
0.1
VGS = -4.5V
THIS AREA IS
LIMITED BY rDS(on)
100ms
SINGLE PULSE
J = MAX RATED
1s
T
10s
DC
θJA = 135oC/W
TA = 25oC
RθJA = 78oC/W
R
25
50
75
100
125
150
0.01
TA, AMBIENT TEMPERATURE (oC)
0.1
1
10
80
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure25. Maxi mu m Co nti nu ou s Dr ain
Current vs Ambient Temperature
Figure 26. Forward Bias Safe
Operating Area
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Typical Characteristics(Q2 P-Channel) TJ = 25oC unless otherwise noted
300
VGS = 10V
FOR TEMPERATURES
o
ABOVE 25 C DERATE PEAK
100
CURRENT AS FOLLOWS:
150 – T
A
I = I
------------------------
25
125
TA = 25oC
10
SINGLE PULSE
R
θJA = 135oC/W
1
0.5
10-3
10-2
10-1
100
101
102
103
t, PULSE WIDTH (s)
Figure 27. Single Pulse Maximum Power Dissipation
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
P
DM
t
1
t
2
SINGLE PULSE
RθJA = 135oC/W
NOTES:
DUTY FACTOR: D = t /t
0.01
1
2
PEAK T = P
x Z
x R
+ T
J
DM
θJC
θJA A
0.0003
10-3
10-2
10-1
100
101
102
103
t, RECTANGULAR PULSE DURATION (s)
Figure 28. Transient Thermal Response Curve
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ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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