FDS9431A [ONSEMI]

P 沟道，2.5V 指定，MOSFET，-20V，-3.5A，130mΩ;


型号：	FDS9431A
厂家：	ONSEMI
描述：	P 沟道，2.5V 指定，MOSFET，-20V，-3.5A，130mΩ PC 开关光电二极管晶体管
文件：	总6页 (文件大小：236K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or

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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application

by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized

for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for

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Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.

September 1999

FDS9431A

P-Channel 2.5V Specified MOSFET

Features

General Description

•

-3.5 A, -20 V. R_DS(ON)= 0.130 Ω @ V_GS= -4.5 V

This P-Channel 2.5V specified MOSFET is produced

using ON Semiconductor's proprietary, high cell

density, DMOS technology. This very high density

process has been especially tailored to minimize on-

state resistance and yet maintain superior switching

performance.

R_DS(ON)= 0.180 Ω @ V_GS= -2.5 V.

• Fast switching speed.

• High density cell design for extremely low R_DS(ON)

• High power and current handling capability.

Applications

• DC/DC converter

• Power management

• Load switch

• Battery protection

SO-8

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

-20

V_GSS

I_D

Gate-Source Voltage

(Note 1a)

Drain Current - Continuous

- Pulsed

-3.5

-18

(Note 1a)

(Note 1b)

P_D

Power Dissipation for Single Operation

2.5

1.2

(Note 1c)

1.0

T_J, T_stg

Operating and Storage Junction Temperature Range

-55 to +150

Thermal Characteristics

(Note 1a)

(Note 1)

Thermal Resistance, Junction-to-Ambient

R_q

C/W

Thermal Resistance, Junction-to-Case

R_q

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS9431A

13’’

12mm

2500 units

Publication Order Number:

FDS9431A/D

1999 Semiconductor Components Industries, LLC.

October-2017, Rev. 1

Electrical Characteristics

T_A= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BV_DSS

Drain-Source Breakdown Voltage

-20

V_GS= 0 V, I_D= -250

Breakdown Voltage Temperature

Coefficient

-28

DSS

mV/ C

_D= -250 A,Referenced to 25 C

T_J

I_DSS

I_GSSF

Zero Gate Voltage Drain Current

V_DS= -16 V, V_GS= 0 V

V_GS= 8 V, V_DS= 0 V

-1

Gate-Body Leakage Current,

Forward

100

I_GSSR

Gate-Body Leakage Current,

Reverse

V_GS= -8 V, V_DS= 0 V

-100

-1

On Characteristics (Note 2)

V_GS(th)

Gate Threshold Voltage

-0.4

-10

-0.6

V_DS= V_GS, I_D= -250

Gate Threshold Voltage

Temperature Coefficient

GS(th)

_D= -250 A,Referenced to 25 C

mV/ C

T_J

R_DS(on)

Static Drain-Source

On-Resistance

V_GS= -4.5 V, I_D= -3.5 A

0.110 0.130

0.140 0.180

0.155 0.220

_GS= -2.5 V, I_D= -3.0 A

_GS= -4.5 V, I_D= -3.5 A

T_J=125 C

I_D(on)

g_FS

On-State Drain Current

V_GS= -4.5 V, V_DS=-5 V

Forward Transconductance

V_DS= -5 V, I_D= -3.5 A

6.5

Dynamic Characteristics

C_iss

C_oss

C_rss

Input Capacitance

V_DS= -10 V, V_GS= 0 V,

f = 1.0 MHz

405

170

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics (Note 2)

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

V_DD= -5 V, I_D= -1 A,

V_GS= -4.5 V, R_GEN= 6

6.5

8.5

Q_g

V_DS= -5 V, I_D= -3.5 A,

_GS= -4.5 V

Q_gs

Q_gd

0.8

1.3

Drain-Source Diode Characteristics and Maximum Ratings

I_S

Maximum Continuous Drain-Source Diode Forward Current

-2.1

-1.2

(Note 2)

V_SD

Drain-Source Diode Forward

Voltage

V_GS= 0 V, I_S= -2.1 A

-0.7

Notes:

1: R_θJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the

drain pins. R_θJCis guaranteed by design while R_θCAis determined by the user's board design.

c) 125° C/W on a minimum

mounting pad.

a) 50° C/W when

mounted on a 1 in²

pad of 2 oz. copper.

b) 105° C/W when

mounted on a 0.04 in²

pad of 2 oz. copper.

Scale 1 : 1 on letter size paper

2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

www.onsemi.com

Typical Characteristics

1.8

1.6

1.4

1.2

V_GS= -4.5V

-3.5V

-2.5V

V_GS= -2.0V

-2.5

-2.0V

-1.5V

-3.0

-3.5

-4.0

-4.5

0.8

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

-I , DRAIN CURRENT (A)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6

0.5

I_D= -1.6A

I_D= -0.8A

V_GS= -4.5V

1.4

0.4

0.3

1.2

T_J= 125°C

0.2

25°C

0.1

0.8

0.6

-50

-25

100

125

150

-V ,GATE TO SOURCE VOLTAGE (V)

, JUNCTION TEMPERATURE (°C)

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

Figure 3. On-Resistance Variation

withTemperature.

= -5V

= -55°C

= 0V

25°C

125°C

0.1

T = 125°C

25°C

-55°C

0.01

0.001

0.0001

0.2

0.4

0.6

0.8

1.2

1.4

-V , GATE TO SOURCE VOLTAGE (V)

-V , BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage

Variation with Source Current

and Temperature.

www.onsemi.com

Typical Characteristics (continued)

2000

1000

500

I_D

= -1.6A

V_DS

= -5V

-15V

iss

200

100

oss

= 1 MHz

V_{G S}= 0 V

rss

0.1

0.2

-V

0.5

Qg, GATE CHARGE (nC)

, D RA IN T O S OUR CE V OLTA GE (V)

Figure 8. Capacitance Characteristics.

Figure 7. Gate Charge Characteristics.

100

SINGLE PULSE

R_θJA= 125^oC/W

T_A= 25^oC

)

(

0 .5

V_V_GS= -4.5V

_{G S}= -4.5V

SINGLE PULSE

SING L E PUL SE

R_R_θJA=₌1₁2₃₅5_°°_CC_//_WW

0. 05

0. 01

J A

= 25°C

= 2 5°C

0.001

0.01

0.1

100

1000

0 .1

0 .3

SINGLE PULSE TIME (SEC)

D S

, DR A IN -SO UR C E V OLTA GE (V)

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

D = 0.5

0.5

(t) = r(t) * R

J A

0.2

= 125°C/W

J A

0. 1

0.1

0.05

0. 0 5

P(pk)

0.02

0. 0 2

t₁

0. 0 1

t₂

0. 0 1

S i

g le P ul se

- T = P

( t)

0.005

D u t

y Cy c l e, D= t ₁/t2

0.002

0.001

0.0001

0.001

0.01

0.1

, TIME (se c)

100

300

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient themal response will change depending on the circuit board design.

www.onsemi.com

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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❖

FDS9431A [ONSEMI]

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