FDS9958-F085 [ONSEMI]
双 P 沟道，Power Trench® MOSFET，-60V，-2.9A，105mΩ;
| 型号： | FDS9958-F085 |
| 厂家： | 
ONSEMI |
| 描述： | 双 P 沟道，Power Trench® MOSFET，-60V，-2.9A，105mΩ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：588K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDS9958-F085
Dual P-Channel PowerTrench® MOSFET
-60V, -2.9A, 105mΩ
General Description
Features
These P-channel logic level specified MOSFETs are produced
using
ON
Semiconductor’s
advanced
PowerTrench®
Max rDS(on) =105mΩ at VGS = -10V, ID = -2.9A
Max rDS(on) =135mΩ at VGS = -4.5V, ID = -2.5A
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for superior
switching performance.
Qualified to AEC Q101
RoHS Compliant
These devices are well suited for portable electronics
applications: load switching and power management, battery
charging and protection circuits.
Applications
Load Switch
Power Management
D2
D2
G2
S2
G1
S1
4
3
D2
D2
D1
5
6
7
8
D1
D1
Q2
Q1
G2
2
1
S2
G1
D1
S1
Pin 1
SO-8
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
-60
V
V
±20
(Note 1a)
(Note 3)
-2.9
ID
A
-12
EAS
Single Pulse Avalanche Energy
54
mJ
Power Dissipation for Dual Operation
Power Dissipation
2
1.6
PD
(Note 1a)
(Note 1b)
W
Power Dissipation
0.9
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
40
78
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
12mm
Quantity
FDS9958
SO-8
330mm
2500units
FDS9958-F085
1
©2016 Semiconductor Components Industries, LLC.
September-2017, Rev.2
Publication Order Number:
FDS9958-F085/D
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250µA, VGS = 0V
-60
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
I
D = -250µA, referenced to 25°C
DS = -48V,
VGS = 0V
-52
mV/°C
V
-1
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
µA
TJ = 125°C
-100
±100
VGS = ±20V, VDS = 0V
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250µA
-1.0
-1.6
4
-3.0
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250µA, referenced to 25°C
mV/°C
V
GS = -10V, ID = -2.9A
82
103
131
7.7
105
135
190
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
VGS = -4.5V, ID = -2.5A
mΩ
VGS = -10V, ID = -2.9A, TJ= 125°C
VDD = -5V, ID = -2.9A
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
765
90
1020
120
65
pF
pF
pF
VDS = -30V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
40
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
6
3
12
10
43
12
23
12
ns
ns
VDD = -30V, ID = -2.9A,
VGS = -10V, RGEN = 6Ω
Turn-Off Delay Time
Fall Time
27
6
ns
ns
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0V to -10V
16
8
nC
nC
nC
nC
VDD = -30V,
ID = -2.9A
Qg
VGS = 0V to -4.5V
Qgs
Qgd
2
3
Drain-Source Diode Characteristics
VSD
trr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, IS = -1.3A (Note 2)
-0.8
26
-1.2
42
V
ns
nC
IF = -2.9A, di/dt = 100A/µs
Qrr
Reverse Recovery Charge
21
35
NOTES:
2
1. R
is determined with the device mounted on a 1in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R is determined by
θCA
θJA
θJC
the user's board design.
a) 78°C/W when
mounted on a 1 in
pad of 2 oz copper
b) 135°C/W when
mounted on a
minimun pad
2
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. UIL condition: Starting T = 25°C, L = 3mH, I = 6A, V = 60V, V = 10V.
J
AS
DD
GS
www.onsemi.com
2
Typical Characteristics TJ = 25°C unless otherwise noted
12
2.5
2.0
1.5
1.0
0.5
VGS = -4V
VGS = -10V
VGS = -3.5V
10
8
VGS = -3V
VGS = -3.5V
VGS = -5V
VGS = -4V
VGS = -4.5V
6
VGS = -3V
4
VGS = -5V
VGS = -4.5V
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
VGS = -10V
2
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
0
0
2
4
6
8
10
12
0
1
2
3
4
-ID, DRAIN CURRENT(A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
240
1.8
1.6
1.4
1.2
1.0
0.8
0.6
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
ID = -2.9A
ID = -2.9A
210
180
150
120
90
VGS = -10V
TJ = 125oC
TJ = 25oC
60
2
4
6
8
10
-75 -50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
F i gu re 3 . N orma li zed On - Res is ta nc e
vs Junction Temperature
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure4. On-Resistance vs Gate to
Source Voltage
20
12
10
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
VGS = 0V
10
8
VDD = -5V
1
TJ = 150oC
TJ = 25oC
6
0.1
0.01
1E-3
4
TJ = 150oC
TJ = 25oC
TJ = -55oC
2
TJ = -55oC
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
Figure 5. Transfer Characteristics
www.onsemi.com
3
Typical Characteristics TJ = 25°C unless otherwise noted
10
2000
1000
ID = -2.9A
8
6
4
2
0
VDD = -20V
Ciss
VDD = -30V
100
Coss
VDD = -40V
Crss
f = 1MHz
= 0V
V
GS
10
0.1
1
10
60
0
5
10
Q , GATE CHARGE(nC)
15
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
g
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
Figure 7. Gate Charge Characteristics
4
3
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VGS = -4.5V
VGS = -10V
TJ = 25oC
2
TJ = 125oC
R
θJA = 78oC/W
1
0.01
0.1
1
10
100
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (oC)
tAV, TIME IN AVALANCHE(ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs Ambient Temperature
20
200
10
VGS = -10V
100
0.1ms
1ms
SINGLE PULSE
RθJA = 135oC/W
A = 25oC
T
1
10ms
10
THIS AREA IS
LIMITED BY rDS(on)
100ms
0.1
0.01
SINGLE PULSE
TJ = MAX RATED
RθJA = 135oC/W
1s
10s
DC
1
T
A = 25oC
0.5
10-3
10-2
10-1
t, PULSE WIDTH (s)
100
101
102
103
200
100
0.1
1
10
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure12. Single Pulse Maximum
Power Dissipation
Figure 11. Forward Bias Safe
Operating Area
www.onsemi.com
4
Typical Characteristics TJ = 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
P
DM
0.1
0.02
0.01
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
θJA = 135oC/W
1
2
PEAK T = P
x Z
x R
+ T
θJA A
J
DM
θJA
R
0.01
0.005
10-3
10-2
10-1
100
101
102
103
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
www.onsemi.com
5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
www.onsemi.com
❖
相关型号：
FDS9958_F085
Power Field-Effect Transistor, 2.9A I(D), 60V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT SOP-8
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明