FDT1600N10ALZ [ONSEMI]

N 沟道，PowerTrench® MOSFET，100V，5.6A，160mΩ;


型号：	FDT1600N10ALZ
厂家：	ONSEMI
描述：	N 沟道，PowerTrench® MOSFET，100V，5.6A，160mΩ
文件：	总11页 (文件大小：560K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

www.onsemi.cn

MOSFET – N ꢀꢁ,

POWERTRENCH⁾

100 V, 5.6 A, 160 mW

FDT1600N10ALZ

SOT−223

CASE 318H

ꢂꢃ

ꢀꢁN ꢂꢀꢁMOSFET ꢁꢃꢁonsemi ꢄꢂꢅꢁPOWERTRENCHꢁꢆ

ꢇꢈꢉ，᪩ꢊꢄꢂꢆꢇꢋꢃꢌꢍꢎꢏ᫪ꢐꢑℋ，ꢒꢓꢔꢕꢖᡚ

ꢅꢗꢘꢙꢚ。

MARKING DIAGRAM

ꢄꢀ

AYW

XXXXXG

•ꢛR

= 121 mW (Typ.) @ V = 10 V, I = 2.8 A

GS D

DS(on)

= 156 mW (Typ.) @ V = 5 V, I = 1.8 A

DS(on)

•ꢛĮ᧥ᥡꢑ็ （͘५Ȝ 2.9 nC）

•ꢛĮ Crss （͘५Ȝ 2.04 pF）

•ꢛꢗꢘꢃႆᇋ

= Assembly Location

= Year

= Work Week

= Specific Device Code

= Pb−Free Package

•ꢛ100% টꢄꢅ༉Ἣꢆ

•ꢛdv/dt ꢚѻ᜙ꢂ

•ꢛ

RoHS ᧧Φ

(Note: Microdot may be in either location)

ꢁꢅ

•ꢛὨꢇꢑരꢈ૧

•ꢛLED ꢑꢉ

٬᠞Њ

ࡈ

•ꢛꢒᵅ᝔ἡ

•ꢛ⛽ꢊឍꢑ⁰

•ꢛᆎ५ଊꢋꢚꢌָ

ࡈ

PIN ASSIGNMENT

ORDERING INFORMATION

See detailed ordering and shipping information on page 3 of

this data sheet.

Publication Order Number:

September, 2022 − Rev. 3

FDT1600N10ALZCN/D

FDT1600N10ALZ

MOSFET ꢆꢂꢇꢃꢄ(T = 25°C ꢀꢁꢀꢂꢃꢄ)

ꢈꢅ

ꢆꢇ

FDT1600N10ALZ

ꢈꢉ

ꢅꢆ－⁰ꢆꢇꢁ

᧥ꢆ－⁰ꢆꢇꢁ

ꢅꢆꢇἡ

100

DSS

GSS

5.6

-᪮ঽ (T = 25°C)

-᪮ঽ (T = 100°C)

3.5

ꢅꢆꢇἡ

-௙ꢂ

(Ỉ 2)

(Ỉ 3)

(Ỉ 4)

11.2

ꢃ௙ꢂ↺༉்Ჟ

ꢄꢆ

ቂ૭ dv/dt ໐ꢅ

ꢆ૧

9.2

dv/dt

6.0

V/ns

10.42

0.083

−55 to +175

300

(T = 25°C)

-ᡕ᪗ 25°C ៖ℝ⍭

W/°C

°C

T , T

࿅ꢇꢈസꢉণꢈීꢊ

STG

✈ꢋჵ௪⋪ᖅŔᣠଇꢈႆ，᢭ҋ૶૓ 1/8"，ᓡঽ 5 Ң

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

(ꢌꢉᚡᝧ)

ୢ᥼ꢇꢁᡕ᪗ᣠଇ⍭ൺꢅጸꢍꢎꢏŔꢅීꢊ，ꢐꢑꢒ்ꢓᔿꢔ。ୢ᥼ᡕ᪗Ûĵ᪩{℠ꢅ，෦ៀẵƽᚑꢐꢑꢆ்，ꢒ்ꢓොೄꢐꢑᔿꢔ，ᅑ

ꢒ∰ሇ。

ꢉꢀꢊ

ꢈꢅ

ꢆꢇ

FDT1600N10ALZ

ꢈꢉ

ণೃ૶૓⋍ℋᣠଇꢅ

ণೃ▏੣⋍ℋᣠଇꢅ

(Ỉ 1)

°C/W

(Ỉ 1a)

ꢋꢌꢄꢀ(T = 25°C ꢀꢁꢀꢂꢃꢄ)

ꢈꢅ

ꢆꢇ

ꢍꢎꢏꢊ

ꢆꢋꢄ ꢌꢍꢄ ꢆꢂꢄ

ꢈꢉ

ꢎꢏꢄꢀ

ꢅꢆ－⁰ꢆϛՏꢇꢁ

= 250 mA, V = 0 V

100

−

DSS

ϛՏꢇꢁꢈႆ

ᝐ

⇆᧥ꢆꢇꢁꢅꢆꢇἡ

᧥ꢆ－⁰ꢆꢅꢇἡ

I = 250 mA, ꢈႆꢌꢉ 25_C

−

0.1

V/_C

DBV_DSS

DT_J

= 80 V, V = 0 V

−

DSS

= 80 V, V = 0 V, T = 125°C

500

= 20 V, V = 0 V

GSS

ꢐꢐꢄꢀ

᧥ꢆ⃘ꢅꢇꢁ

= V , I = 250 mA

1.4

−

2.8

160

375

−

GS(th)

ꢅꢆೃ⁰ꢆ∩ᇡො᫪ꢇℋ

= 10 V, I = 2.8 A

121

156

26.1

DS(on)

= 5 V, I = 1.8 A

−

ᵃ

ᢸො

= 10 V, I = 5.6 A

−

ꢑꢒꢄꢀ

ᩣͅꢇ඙

= 50 V, V = 0 V,

−

169

225

−

iss

f = 1 MHz

ᩣꢏꢇ඙

oss

Āᩣꢇ඙

்⁰ǈ͓ᩣꢏꢇ඙

2.04

rss

= 50 V, V = 0 V

−

oss(er)

FDT1600N10ALZ

ꢋꢌꢄꢀ(T = 25°C ꢀꢁꢀꢂꢃꢄ)

ꢈꢅ

ꢆꢇ

10 V Ŕ᧥ꢆꢇ็ማᲟ

ꢍꢎꢏꢊ

ꢆꢋꢄ ꢌꢍꢄ ꢆꢂꢄ

ꢈꢉ

= 10 V

= 5 V

V = 50 V,

−

2.9

1.6

3.77

2.08

−

g(tot)

= 5.6 A

5 V Ŕ᧥ꢆꢇ็ማᲟ

᧥ꢆ－⁰ꢆ᧥ꢆꢇ็

᧥ꢆ－ꢅꢆ “ඦҲ”ꢇ็

᧥ꢆꢇचꢇꢁ

0.7

0.64

3.81

2.45

5.2

−

(Ỉ 5)

−

plateau

ማ᧥ꢆꢇ็

ᵅ

= 0 V, I = 2.8 A

−

sync

ᩣꢏꢇ็

= 50 V, V = 0 V

−

oss

ESR

ؙᜨꢕତꢇℋ (G−S)

f = 1 MHz

2.1

−

ꢓꢎꢄꢀ

ො᫪ზ᪯៖⃄

⛺ԧ៖⃄

= 50 V, I = 5.6 A,

−

7.4

2.5

24.8

d(on)

= 10 V, R = 4.7 W

͓ឍზ᪯៖⃄

͓ឍ⛻ℝ៖⃄

13.5

2.4

d(off)

14.8

(Ỉ 5)

ꢑꢒ－⁰ꢒꢔꢒ

ꢄꢀ

ꢅꢆ－⁰ꢆꢄꢆ

ᣠଇ᪮ঽᵃ

ꢇἡ

ꢅꢆ－⁰ꢆꢄꢆ

ᣠଇᵃ

௙ꢂꢇἡ

⁰ꢆ－ꢅꢆꢄꢆ

ᵃ

ꢇꢁ

ቂ૭៖⃄

−

5.6

11.2

1.3

−

= 0 V, I = 5.6 A

−

= 0 V, I = 5.6 A, V = 50 V

34.1

32.7

dI /dt = 100 A/ms

ቂ૭ꢇ็

−

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

(ꢌꢉᚡᝧ)

ꢀꢁꢀꢂꢃꢄ，“ꢇᷴ⑙ሇ”ጸ᨜ꢍꢎꢏŔ᠏ᐠꢎἫᚥ᥁ꢑ⛻Ŕ

ሇ்ꢌᝐ。ୢ᥼ई⛽

᥁ꢑ⛻᪠ጜ，

ሇ்ꢒ்⛾“ꢇᷴ⑙ሇ”ጸ᨜

ꢍᐠꢎሇ்ꢌᝐ⛽⛰ೄ。

1. R

ؙꢋণೃ૓ĳꢈ૓ĳೃ▏੣⋍ℋ+ꢈ，͖ꢍ，૓ĳ⋍ꢌꢉൺ)ꢖꢅꢆჵ௪Ŕ⋪᝹൩᎕ጸ∲。

ꢊ✈ᐗŔᥟᚎᙱ̾ൺ。

ꢊᚎᙱƽᚑ，૜ R

b. 118 ൩᎕ई 2 oz Ŕᣠ෯ᾬ⋪ƨ⛺៖Ŕ

°C/W。

a. 60 ൩᎕ई2 oz Ŕᣠ෯ 1 in

ᾬ⋪ƨ⛺៖Ŕ °C/W。

2. Ო૭⍭ൺꢅ：௙ꢂꢋႆַ℠ꢋᣠଇণꢈ。

3. ؏҈T = 25°C, L = 3 mH, I = 2.47 A。

4. I ≤ 5.6 A, di/dt ≤ 200 A/ms, V ≤ BV

, ؏҈T = 25°C

DSS

5. ꢌꢍ⛺ꢎꢏꢋ࿅ꢇꢈႆŔ͘५⑙ሇ。

ꢕ᎕᧧ᚖꢖꢃ៽ꢗꢘ

†

ꢙꢊ০ꢅ

⍆᧧

ꢕ᎕ꢚꢛ

SOT−223

ꢜƨꢝෘ

ᩍဆඝ

ꢇᲟ / ӥ᎕យẵ

FDT1600N10ALZ

16010ALZ

13”

12 mm

4000 ꢐ/՗

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

FDT1600N10ALZ

ꢌꢍꢀꢊꢄᅡ

150°C

25°C

= 15.0 V

10.0 V

8.0 V

6.0 V

5.0 V

4.5 V

4.0 V

−55°C

*Notes :

1. 250 ms Pulse Test

*Notes:

1. V = 10 V

2. 250 ms Pulse Test

2. T = 25°C

3.5 V

0.1

0.3

, GATE−TO−SOURCE VOLTAGE (V)

, DRAIN−SOURCE VOLTAGE (V)

ࣞ

1. ꢐꢐԚিꢄꢀ

ࣞ

2. Āᩣꢄꢀ

400

300

200

= 5 V

= 10 V

25°C

150°C

*Notes :

100

1. V = 0 V

2. 250 ms Pulse Test

*Note : T = 25°C

0.1

0.3

0.6

0.9

1.2

1.5

, BODY DIODE FORWARD VOLTAGE (V)

I , DRAIN CURRENT (A)

ࣞ

4. ĳꢔꢒ

ᵃ

ꢋիָӶꢖ⁰ꢋἡ

ꢓႆ

ࣞ

3. ꢐꢐꢋℋָӶꢖꢑꢒꢋἡ

᧥ꢒꢋի

300

100

iss

= 20 V

= 50 V

= 80 V

oss

*Note:

1.V = 0 V

2. f = 1 MHz

= C + C (C = Shorted)

gs gd ds

iss

= C + C

oss

rss

*Note : I = 2.8 A

= C

rss

3.0

0.1

100

0.5

1.0

1.5

2.0

2.5

Q , TOTAL GATE CHARGE (nC)

, DRAIN−SOURCE VOLTAGE (V)

ࣞ

5. ꢋ඙ꢄꢀ

ࣞ

6. ᧥ꢒꢋ็

FDT1600N10ALZ

ꢌꢍꢀꢊꢄᅡ（ᖅ⛺⍅）

1.10

1.05

1.00

2.1

1.8

1.5

1.2

0.9

0.95

0.90

* Notes:

0.6

0.3

1.V = 10 V

2. I = 2.8 A

2. I = 250 μA

−80

120

160

−40

120

160

T , JUNCTION TEMPERATURE (°C)

ࣞ

7. ϛꢔꢋիָӶꢖꢓႆ

ࣞ

8. ꢐꢐꢋℋָӶꢖꢓႆ

100 ms

= 10 V

1 ms

0.1

= 5 V

10 ms

Operation in this Area

is Limited by R

DS(on)

100 ms

*Notes:

1. T = 25°C

2. T = 150°C

3. Single Pulse

= 12°C/W

0.01

150

100

125

0.1

100

, DRAIN−SOURCE VOLTAGE (V)

ࣞ

9. ꢆꢂ൩͈࿅ļԚ

T , CASE TEMPERATURE (°C)

ࣞ

10. ꢆꢂꢑꢒꢋἡꢖꢞĳꢓႆ

0.25

0.20

0.15

T = 25°C

T = 125°C

0.10

0.05

0.1

t , TIME IN AVALANCHE (ms)

100

0.01

0.001

, DRAIN−TO−SOURCE VOLTAGE (V)

ࣞ

11. Eoss ꢖꢑꢒꢕ⁰ꢒꢋի

ࣞ

12. ꢖꢗꢉꢟꢀꢓꢎꢊꢠ

FDT1600N10ALZ

ꢌꢍꢀꢊꢄᅡ（ᖅ⛺⍅）

0.5

0.2

0.1

0.05

0.02

0.01

0.1

*Notes:

1.Z (t) = 118°C/W Max.

Single Pulse

2. Duty Factor, D = t /t

3. T − T = P

x Z (t)

0.01

0.1

100

1000

t , ꢑꢒ௙ꢂᓡঽ៖⃄ (Ң)

ࣞ

13. ꢘꢒꢉꢡꢁꢙꢚ

FDT1600N10ALZ

= const.

ࣞ

14. ᧥ꢒꢋ็ꢍꢎꢋꢛꢖꢜꢚ

R_L

V_DS

90%

V_DS

V_DD

V_GS

R_G

10%

V_GS

10V

DUT

t_d(on)

t_r

t_d(off)

t_f

t _on

t _off

ࣞ

15. ℋꢀꢓꢎꢍꢎꢋꢛꢖꢜꢚ

ࣞ

16. ꢖꢗꢉꢟꢀꢓꢎꢍꢎꢋꢛꢖꢜꢚ

FDT1600N10ALZ

DUT

Driver

Same Type

as DUT

· dv/dt Controlled by R

· I Controlled by Pulse Period

Gate Pulse Width

D =

10 V

(Driver)

Gate Pulse Period

, Body Diode Forward Current

di/dt

(DUT)

Body Diode Reverse Current

Body Diode Recoverydv/dt

(DUT)

Body Diode

Forward Votage Drop

ࣞ

17. ꢔꢒ

ꢢꢣ dv/dt ꢤꢄꢍꢎꢋꢛꢖꢜꢚ

FDT1600N10ALZ

V_CC

Driver

(Driver)

10 V

V_DD

(DUT)

DUT

R_G

@∫ V_RG(t)dt

sync

(eq. 1)

ࣞ

18. ꢥ᧥ꢒꢋ็ Qsync. ꢍꢎꢋꢛ

ꢜꢚ

POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United

States and/or other countries.

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SOT−223

CASE 318H

ISSUE B

DATE 13 MAY 2020

SCALE 2:1

= Assembly Location

= Year

= Work Week

GENERIC

MARKING DIAGRAM*

XXXXX = Specific Device Code

= Pb−Free Package

(Note: Microdot may be in either location)

AYW

XXXXXG

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may

or may not be present. Some products may

not follow the Generic Marking.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98ASH70634A

SOT−223

PAGE 1 OF 1

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the

rights of others.

www.onsemi.com

onsemi,

, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates

and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.

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TECHNICAL PUBLICATIONS:

Technical Library: www.onsemi.com/design/resources/technical−documentation

onsemi Website: www.onsemi.com

ONLINE SUPPORT: www.onsemi.com/support

For additional information, please contact your local Sales Representative at

www.onsemi.com/support/sales



FDT1600N10ALZ [ONSEMI]

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