FDT434P [ONSEMI]
P 沟道,2.5V 指定,PowerTrench™ MOSFET,-20V,-5.5A,50mΩ;型号: | FDT434P |
厂家: | ONSEMI |
描述: | P 沟道,2.5V 指定,PowerTrench™ MOSFET,-20V,-5.5A,50mΩ PC 开关 脉冲 光电二极管 晶体管 |
文件: | 总6页 (文件大小:285K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
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FDT434P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
Features
This P-Channel 2.5V specified MOSFET is produced
• –5.5 A, –20 V. RDS(ON) = 0.050 Ω @ VGS = –4.5 V
RDS(ON) = 0.070 Ω @ VGS = –2.5 V.
using
ON
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
• Low gate charge (13nC typical)
• High performance trench technology for extremely
Applications
low RDS(ON)
.
• Low Dropout Regulator
• DC/DC converter
• Load switch
• High power and current handling capability in a
widely used surface mount package.
• Motor driving
D
D
S
D
G
D
S
G
SOT-223
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–20
V
VGSS
ID
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
V
A
8
–6
–30
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
3
1.3
1.1
W
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
42
12
RθJA
RθJC
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
434
FDT434P
13’’
12mm
2500 units
©2011 Semiconductor Components Industries, LLC.
October-2017, Rev. 3
1
Publication Order Number:
FDT434P/D
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
–20
V
VGS = 0 V, ID = –250 µA
Breakdown Voltage Temperature
–28
∆BVDSS
∆TJ
ID = –250 µA,Referenced to 25°C
mV/°C
Coefficient
IDSS
Zero Gate Voltage Drain Current
VDS = –16 V, VGS = 0 V
–1
µA
IGSSF
Gate–Body Leakage Current,
VGS = 8 V,
VDS = 0 V
100
nA
Forward
IGSSR
Gate–Body Leakage Current,
Reverse
VGS = –8 V
VDS = 0 V
–100
–1
nA
On Characteristics
(Note 2)
Gate Threshold Voltage
VGS(th)
–0.4
–20
–0.6
2
V
VDS = VGS, ID = –250 µA
ID = –250 µA,Referenced to 25°C
Gate Threshold Voltage
∆VGS(th)
∆TJ
mV/°C
Temperature Coefficient
RDS(on)
Static Drain–Source
On–Resistance
V
V
GS = –4.5 V, ID = –6 A
GS = –2.5 V, ID = –4 A
0.040 0.050
0.050 0.070
0.067 0.083
Ω
VGS = –4.5 V, ID = –6 A TJ=125°C
ID(on)
gFS
On–State Drain Current
Forward Transconductance
VGS = –4.5 V,
VDS = –10 V,
VDS = –5 V
ID = –6 A
A
S
6.5
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = –10 V,
f = 1.0 MHz
V GS = 0 V,
1187
270
114
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
VDD = –5 V,
ID = –1 A,
8
15
45
30
13
1.8
3
16
25
65
50
19
ns
ns
ns
VGS = –4.5 V, RGEN = 6 Ω
ns
Qg
Qgs
Qgd
VDS = –10 V,
GS = –4.5 V
ID = –6 A,
nC
nC
nC
V
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–2.5
–0.75 –1.2
A
V
VSD
Drain–Source Diode Forward
VGS = 0 V, IS = –2.5 A (Note 2)
Voltage
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 42°C/W when
mounted on a 1in2
pad of 2 oz copper
b) 95°/W when mounted
on a .0066 in2 pad of
2 oz copper
c) 110°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
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2
Typical Characteristics
1.8
1.6
1.4
1.2
1
20
VGS = -4.5V
-3.0V
-2.5V
16
VGS = -2.5V
-3.0V
12
8
-2.0V
-3.5V
-4.0V
-4.5V
4
-1.5 V
0
0.8
0
1
2
3
4
5
0
5
10
- I , DRAIN CURRENT (A)
15
20
-VDS, DRAIN-SOURCE VOLTAGE (V)
D
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.4
1.2
1
0.15
0.12
0.09
0.06
0.03
0
ID = -6 A
ID = - 6 A
VGS = - 4.5V
T =125°C
A
25°C
0.8
0.6
-50
-25
0
T
25
50
75
100
125
150
1
2
3
4
5
, JUNCTION TEMPERATURE (°C)
- V
, GATE TO SOURCE VOLTAGE (V)
GS
J
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
15
15
VGS= 0V
VDS = -5V
T
= -55°C
J
T = 125°C
12
9
J
25°C
1
125°C
25°C
-55°C
0.1
0.01
6
3
0
0.001
0.9
1.2
1.5
1.8
2.1
2.4
2.7
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V , GATE TO SOURCE VOLTAGE (V)
-V , BODY DIODE FORWARD VOLTAGE (V)
SD
GS
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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3
Typical Characteristics
5
1800
1600
1400
1200
1000
800
I
= -6.0A
D
f = 1MHz
VGS = 0 V
V
= -5V
DS
4
3
2
-10V
-15V
CISS
600
COSS
400
CRSS
1
0
200
0
0
2
4
6
8
10
12
0
3
6
9
12
15
Q g , GATE CHARGE (nC)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
200
SINGLE PULSE
RθJA = 110oC/W
T
µ
100
s
10ms
100ms
R
LIMIT
160
120
80
40
0
DS(ON)
A = 25oC
10
1
1s
10s
DC
V
=
-4.5V
GS
SINGLE PULSE
0.1
o
R
= 110 C/W
θJA
o
T
= 25 C
A
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
-V , DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
DS
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * R
θ
JA
0.2
R
θJA = 110 °C/W
0.1
0.1
0.01
0.05
0.02
P(pk)
t1
0.01
t2
TJ - TA = P * R θJA(t)
Duty Cycle, D = t 1 / t2
Single Pulse
0.001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
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4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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