FDT457N [ONSEMI]

N 沟道增强型场效应晶体管 30V，5A，60mΩ;


型号：	FDT457N
厂家：	ONSEMI
描述：	N 沟道增强型场效应晶体管 30V，5A，60mΩ PC 开关脉冲光电二极管晶体管场效应晶体管
文件：	总6页 (文件大小：198K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

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Transistor, N-Channel, Field

Effect, Enhancement Mode

MAX

I MAX

DSS

DS(ON)

30 V

ꢂ

ꢃ

ꢂ

ꢄ

ꢀ

5 A

FDT457N

0.090 ꢀ @ 4.5 V

General Description

These N−Channel enhancement mode power field effect transistors

are produced using onsemi’s proprietary, high cell density,

DMOS technology. This very high density process is especially

tailored to minimize on−state resistance, provide superior switching

performance. These products are well suited to low voltage, low

current applications such as notebook computer power management,

battery powered circuits, and DC motor control.

SOT−223

CASE 318H

Features

• 5 A, 30 V

MARKING DIAGRAM

= 0.06 ꢀ @ V = 10 V

DS(on)

= 0.090 ꢀ @ V = 4.5 V

DS(on)

• High Density Cell Design for Extremely Low R

DS(ON)

AYW

457G

• High Power and Current Handling Capability in a Widely Used

Surface Mount Package

• This Device is Pb−Free

= Specific Device Code

= Date Code

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Symbol

Parameter

Drain−Source Voltage

Gate−Source Voltage − Continuous

Ratings

Unit

= Work Week

457 = Specific Device Code

DSS

GSS

= Pb−Free Package

(Note: Microdot may be in either location)

Maximum

− Continuous (Note 1a)

− Pulsed

Drain Current

Maximum

Power

Dissipation

(Note 1a)

(Note 1b)

(Note 1c)

1.3

PINOUT

1.1

T , T

Operating and Storage

Temperature Range

−65 to +150

°C

stg

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Symbol

Parameter

Ratings

Unit

ꢁ JA

ꢁ JC

Thermal Resistance, Junction−to−Ambient

°C/W

ORDERING INFORMATION

(Note 1a)

Thermal Resistance, Junction−to−Case

(Note 1)

°C/W

†

Device

FDT457N

Shipping

Package

4000 / Tape & Reel

SOT−223

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

September, 2022 − Rev. 4

FDT457N/D

FDT457N

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted)

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

= 0 V, I = 250 ꢅ A

−

DSS

Breakdown Voltage Temperature

Coefficient

= 250 ꢅ A,Referenced to 25°C

−

mV/°C

ꢆ BV_DSS

ꢆ T_J

Zero Gate Voltage Drain Current

= 24 V, V = 0 V

−

ꢅ A

DSS

= 24 V, V = 0 V, T = 55°C

Gate–Body Leakage Current, Forward

Gate–Body Leakage Current, Reverse

= 20 V, V = 0 V

100

–100

GSSF

= −20 V, V = 0 V

GSSR

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

= V , I = 250 ꢅ A

1.6

GS(th)

Gate Threshold Voltage

Temperature Coefficient

= 250 ꢅ A, Referenced to 25°C

−

–4.2

−

mV/°C

ꢆ V_GS(th)

ꢆ T_J

Static Drain–Source On–Resistance

= 10 V, I = 5 A

−

0.043

0.065

0.071

0.06

0.1

0.09

ꢀ

DS(on)

= 10 V, I = 5 A, T = 125°C

= 4.5 V, I = 3.8 A

On−State Drain Current

= 10 V, V = 5 V

−

D(on)

Forward Transconductance

= 10 V, I = 5 A

−

DYNAMIC CHARACTERISTICS

Input Capacitance

= 15 V, V = 0 V, f = 1.0 MHz

−

235

145

−

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

SWITCHING CHARACTERISTICS (Note 2)

Turn–On Delay Time

Turn–On Rise Time

Turn–Off Delay Time

Turn–Off Fall Time

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

= 10 V, I = 1 A, V = 10 V,

GEN

−

d(on)

= 6 ꢀ

d(off)

= 10 V, I = 5 A, V = 5 V

4.2

1.3

1.7

5.9

−

DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATIINGS

Maximum Continuous Drain−Source Diode Forward Current

Drain–Source Diode Forward Voltage = 0 V, I = 2.5 A (Note 2)

−

2.5

1.2

0.85

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

NOTES:

1. R

is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder

ꢁ

mounting surface of the drain pins. R

is guaranteed by design while R

is determined by the user’s board design.

ꢁ

a. 42°C/W when

mounted on a 1 in

pad of 2oz Cu.

b. 95°C/W when

mounted on a 0.066 in

pad of 2oz Cu.

c. 110°C/W when

mounted on a 0.00123

in pad of 2oz Cu.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width v300 ꢅ s, Duty cycle v2.0 %.

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FDT457N

TYPICAL CHARACTERISTICS

2.5

10 V

6.0 V

= 5.0 V

= 3.5 V

4.5 V

4.0 V

1.5

4.0 V

3.5 V

4.5 V

5.0 V

6.0 V

3.0 V

7.0 V

10 V

0.5

1.5

2.5

I , Drain Current (A)

, Drain−Source Voltage (V)

Figure 2. On−Resistance Variation

with Drain Current and Gate Voltage

Figure 1. On−Region Characteristics

1.6

1.4

1.2

0.25

0.2

0.15

0.1

0.05

= 5 A

= 2 A

= 10 V

T = 125°C

0.8

T = 25°C

0.6

−50 −25

100 125 150

T , Junction Temperature (5C)

, Gate to Source Voltage (V)

Figure 3. On−Resistance Variation

Figure 4. On−Resistance Variation

with Gate−to−Source Voltage

with Temperature

= 0 V

T = −55°C

= 10 V

25°C

0.1

T = 125°C

125°C

25°C

0.01

−55°C

0.001

0.0001

0.2

0.6

0.8

1.2

0.4

, Gate to Source Voltage (V)

, Body Diode Forward Voltage (V)

Figure 5. Transfer Characteristics

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature

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FDT457N

TYPICAL ELECTRICAL CHARACTERISTICS (continued)

1000

= 4 A

= 5 V

400

200

100

iss

10 V

oss

15 V

rss

f = 1 MHz

= 0 V

0.1

0.3

Q , Gate Charge (nC)

, Drain to Source Voltage (V)

Figure 7. Gate Charge Characteristics

Figure 8. Capacitance Characteristics

200

160

120

SINGLE PULSE

= 110°C/W

T = 25°C

DS(ON)

LIMIT

100 ꢅs

ꢁ

1 ms

10 ms

100 ms

1 s

10 s

0.5

= 10 V

0.1

0.05

SINGLE PULSE

= 110°C/W

ꢁ

T = 25°C

0.01

0.1 0.2

0.5

10 20

0.001

0.01

0.1

100 300

, Drain−Source Voltage (V)

Single Pulse Time (s)

Figure 9. Maximum Safe Operating Area

Figure 10. Single Pulse Maximum Power

Dissipation

D = 0.5

0.5

0.2

0.1

(t) = r(t) x R

= 110°C/W

ꢁ

0.1

0.05

0.02

0.01

0.02

0.01

0.005

Single Pulse

T − T = P x R (t)

ꢁ

Duty Cycle, D = t / t

0.002

0.001

0.0001

0.001

0.01

0.1

t , Time (s)

100

300

Figure 11. Transient Thermal Response Curve

(Note: Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.)

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MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

SOT−223

CASE 318H

ISSUE B

DATE 13 MAY 2020

SCALE 2:1

= Assembly Location

= Year

= Work Week

GENERIC

MARKING DIAGRAM*

XXXXX = Specific Device Code

= Pb−Free Package

(Note: Microdot may be in either location)

AYW

XXXXXG

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may

or may not be present. Some products may

not follow the Generic Marking.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98ASH70634A

SOT−223

PAGE 1 OF 1

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

FDT457N [ONSEMI]

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