FDT459N [ONSEMI]
N 沟道增强型场效应晶体管，30V，6.5A，35mΩ;
| 型号： | FDT459N |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道增强型场效应晶体管，30V，6.5A，35mΩ 开关 脉冲 光电二极管 晶体管 场效应晶体管 |
| 文件： | 总7页 (文件大小：212K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
March 1998
FDT459N
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance,
provide superior switching performance. These products are
well suited to low voltage, low current applications such as
notebook computer power management, battery powered
circuits, and DC motor control.
6.5 A, 30 V. RDS(ON) = 0.035W @ VGS = 10 V
RDS(ON) = 0.055 W @ VGS = 4.5 V.
High density cell design for extremely low RDS(ON)
.
High power and current handling capability in a widely used
surface mount package.
SuperSOTTM-3
SuperSOTTM-8
SuperSOTTM-6
SO-8
SOT-223
SOIC-16
D
D
S
G
D
S
G
Absolute Maximum Ratings TA = 25oC unless otherwise noted
Symbol Parameter
FDT459N
Units
Drain-Source Voltage
30
V
VDSS
VGSS
ID
Gate-Source Voltage - Continuous
±20
V
A
Maximum Drain Current - Continuous
- Pulsed
(Note 1a)
6.5
20
3
PD
Maximum Power Dissipation
(Note 1a)
(Note 1b)
W
1.3
1.1
(Note 1c)
Operating and Storage Temperature Range
-55 to 150
°C
TJ,TSTG
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient (Note 1a)
Thermal Resistance, Junction-to-Case
42
12
°C/W
°C/W
RqJA
RqJC
(Note 1)
* Order option J23Z for cropped center drain lead.
FDT459NRev.C
© 1998 Fairchild Semiconductor Corporation
O
Electrical Characteristics (TA = 25 C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
30
V
ID = 250 µA, Referenced to 25 o C
mV/oC
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
33
DBVDSS/DTJ
1
µA
µA
nA
nA
IDSS
VDS = 24 V, VGS = 0 V
TJ =55°C
10
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
100
-100
IGSSF
IGSSR
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
1
1.6
2
V
VGS(th)
VDS = VGS, ID = 250 µA
Gate Threshold Voltage Temp.Coefficient
Static Drain-Source On-Resistance
ID = 250 µA, Referenced to 25 oC
-4.2
mV/oC
DVGS(th)/DTJ
RDS(ON)
VGS = 10 V, ID = 6.5 A
0.031 0.035
0.044 0.06
W
TJ =125°C
VGS = 4.5 V, ID = 5.5 A
VGS = 10 V, VDS = 5 V
VDS = 10 V, ID = 6.5 A
0.046 0.055
On-State Drain Current
20
A
S
ID(ON)
gFS
Forward Transconductance
16
DYNAMIC CHARACTERISTICS
Input Capacitance
365
210
70
pF
pF
pF
Ciss
Coss
Crss
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
5.2
8.2
6
11
16
12
26
17
ns
ns
tD(on)
tr
tD(off)
tf
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6 W
ns
16
12
2.2
3
ns
nC
nC
nC
Qg
Qgs
Qgd
VDS = 10 V, ID = 6.5 A,
VGS = 10 V
Gate-Source Charge
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
2.5
1.2
A
V
0.8
VSD
VGS = 0 V, IS = 2.5 A (Note 2)
Notes:
1. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by
design while RqCA is determined by the user's board design.
Typical RqJA using the board layouts shown below on FR-4 PCB in a still air environment:
c. 110oC/W when mounted on a 0.00123
in2 pad of 2oz Cu.
a. 42oC/W when mounted on a 1 in2 pad of
2oz Cu.
b. 95oC/W when mounted on a
pad of 2oz Cu.
0.066 in2
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDT459NRev.C
Typical Electrical Characteristics
30
3.5
3
V
= 10V
6.0
GS
5.0
25
20
15
10
5
V
= 3.5V
GS
4.5
2.5
2
4.0
4.0
4.5
5.0
1.5
1
3.5
3
6.0
10
3.0
0
0.5
0
1
2
4
5
0
5
10
15
20
25
30
V
, DRAIN-SOURCE VOLTAGE (V)
I
, DRAIN CURRENT (A)
DS
D
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 1. On-Region Characteristics.
0.14
0.12
0.1
1.6
1.4
1.2
1
ID= 6.5A
I
= 6.5A
D
V
= 10V
GS
0.08
0.06
0.04
0.02
TJ = 125°C
0.8
0.6
25°C
2
4
6
8
10
-50
-25
0
25
50
75
100
125
150
V
, GATE TO SOURCE VOLTAGE (V)
T
, JUNCTION TEMPERATURE (°C)
GS
J
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
Figure 3. On-Resistance Variation
with Temperature.
25
20
15
10
5
20
V
DS
= 10V
V
= 0V
T = -55°C
J
GS
25°C
T = 125°C
125°C
1
0.1
J
25°C
-55°C
0.01
0.001
0.0001
0
1
2
3
4
5
6
0
0.2
V
0.4
0.6
0.8
1
1.2
1.4
, BODY DIODE FORWARD VOLTAGE (V)
V
, GATE TO SOURCE VOLTAGE (V)
SD
GS
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDT459NRev.C
Typical Electrical Characteristics
1000
10
VDS= 5V
ID = 6.5A
10V
8
6
4
2
0
15V
400
200
100
C
iss
C
oss
C
rss
f = 1 MHz
50
30
V
= 0 V
GS
0.1
0.3
V
1
3
10
30
0
2
4
6
8
10
12
14
, DRAIN TO SOURCE VOLTAGE (V)
DS
Q
, GATE CHARGE (nC)
g
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
40
200
160
120
80
20
10
5
SINGLE PULSE
RqJA= see note 1c
T = 25°C
A
2
1
0.5
VGS =10V
0.1
SINGLE PULSE
RqJA= See Note 1c
40
0.05
TA = 25°C
0
0.01
0.001
0.01
0.1
1
10
100 300
0.1
0.2
0.5
1
2
5
10
20 30 50
SINGLE PULSE TIME (SEC)
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10. Single Pulse Maximum Power
Dissipation.
Figure 9. Maximum Safe Operating Area.
1
D = 0.5
0.5
0.2
0.1
0.2
0.1
R
(t) = r(t) * R
JA
q
JA
q
R
= See Note 1c
JA
q
0.05
0.05
0.02
0.01
P(pk)
0.02
0.01
t
1
t
Single Pulse
0.001
2
0.005
T
- T = P * R
(t)
JA
J
A
q
0.002
0.001
Duty Cycle, D = t / t
1
2
0.0001
0.01
0.1
, TIME (sec)
1
10
100
300
t
1
Figure 11. Transient Thermal Response Curve.
Note: Thermal characterization performed using the conditions described in note 1c.
Transient thermal response will change depending on the circuit board design.
FDT459NRev.C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
â
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STAR*POWER™
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FAST
ACEx™
Bottomless™
CoolFET™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
FASTr™
FRFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
CROSSVOLT™
DenseTrench™
DOME™
POP™
Power247™
PowerTrenchâ
QFET™
EcoSPARK™
E2CMOSTM
TinyLogic™
QS™
EnSignaTM
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
SILENTSWITCHERâ
FACT™
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UltraFETâ
STAR*POWER is used under license
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DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT
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the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
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