FDT86102LZ [ONSEMI]
N 沟道，PowerTrench® MOSFET，100V，6.6A，28mΩ;
| 型号： | FDT86102LZ |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，100V，6.6A，28mΩ PC 开关 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：276K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – N-Channel,
POWERTRENCH)
D
100 V, 6.6 A, 28 mW
S
D
G
FDT86102LZ
SOT−223
CASE 318H
General Description
This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to
minimize the on−state resistance and switching loss. G−S zener has
been added to enhance ESD voltage level.
MARKING DIAGRAM
AYW
102LZG
G
Features
• Max r
• Max r
= 28 mW at V = 10 V, I = 6.6 A
GS D
DS(on)
DS(on)
= 38 mW at V = 4.5 V, I = 5.5 A
GS
D
1
• HBM ESD Protection Level > 6 kV Typical (Note 4)
• Very Low Qg and Qgd Compared to Competing Trench Technologies
• Fast Switching Speed
A
Y
W
= Assembly Location
= Year
= Work Week
102LZ = Specific Device Code
• 100% UIL Tested
G
= Pb−Free Package
• This Device is Pb−Free, Halide Free and RoHS Compliant
(Note: Microdot may be in either location)
Applications
• DC − DC Conversion
• Inverter
• Synchronous Rectifier
PIN ASSIGNMENT
D
Specifications
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Drain to Source Voltage
Ratings
100
20
Unit
V
V
DS
V
GS
Gate to Source Voltage
Drain Current
V
G
S
D
I
D
−Continuous
−Pulsed
6.6
A
40
E
Single Pulse Avalanche Energy (Note 3)
Power Dissipation
T = 25°C (Note 1a)
84
mJ
W
AS
ORDERING INFORMATION
See detailed ordering and shipping information on page 6
of this data sheet.
P
2.2
D
A
T = 25°C (Note 1b)
A
1.0
T , T
Operating and Storage Junction
Temperature Range
−55 to +150 °C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
September, 2022 − Rev. 3
FDT86102LZ/D
FDT86102LZ
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
12
Unit
R
Thermal Resistance, Junction to Case (Note 1)
Thermal Resistance, Junction to Ambient (Note 1a)
_C/W
q
JC
JA
R
55
q
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
100
V
DSS
D
GS
Breakdown Voltage Temperature
Coefficient
= 250 mA, Referenced to 25°C
70
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 80 V, V = 0 V
1
mA
mA
DSS
GSS
DS
GS
I
=
20 V, V = 0 V
10
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 250 mA
1.0
1.4
–6
3.0
V
GS(th)
GS
DS
D
Gate to Source Threshold Voltage
Temperature Coefficient
= 250 mA, Referenced to 25°C
mV/°C
DVGS(th)
DTJ
D
r
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 6.6 A
22
27
36
26
28
38
46
mW
DS(on)
D
= 4.5 V, I = 5.5 A
D
= 10 V, I = 6.6 A, T = 125°C
D
J
g
FS
= 5 V, I = 6.6 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 50 V, V = 0 V, f = 1 MHz
1118
181
7.5
1490
245
15
pF
pF
pF
W
iss
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
0.5
g
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Rise Time
V
= 50 V, I = 6.6 A, V = 10 V,
GEN
6.6
1.9
19
14
10
31
10
25
12
ns
ns
ns
ns
nC
d(on)
DD
D
GS
R
= 6 W
t
r
t
Turn−Off Delay Time
Fall Time
d(off)
t
f
2.2
17
Q
Total Gate Charge
V
GS
V
GS
V
DD
= 0 V to 10 V, V = 50 V, I = 6.6 A
DD D
g(TOT)
= 0 V to 4.5 V, V = 50 V, I = 6.6 A
8.3
2.6
2.2
DD
D
Q
Q
Gate to Source Charge
= 50 V, I = 6.6 A
nC
nC
gs
D
Gate to Drain “Miller” Charge
gd
DRAIN−SOURCE DIODE CHARACTERISTICS
V
SD
Source to Drain Diode Forward
Voltage
V
V
= 0 V, I = 6.6 A (Note 2)
0.82
0.68
1.3
1.2
V
GS
S
= 0 V, I = 1.0 A (Note 2)
GS
S
t
Reverse Recovery Time
I = 6.6 A, di/dt = 100 A/ms
F
40
36
64
58
ns
rr
Q
Reverse Recovery Charge
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2
FDT86102LZ
NOTES:
1. R
2
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material.
q
JA
R
is guaranteed by design while R
is determined by the user’s board design.
q
q
CA
JC
2
a. 55°C/W when mounted on a 1 in pad
b. 118°C/W when mounted on a minimum
pad of 2 oz copper
of 2 oz copper
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. Starting T = 25°C, L = 1 mH, I = 13 A, V = 90 V, V = 10 V.
J
AS
DD
GS
4. The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
www.onsemi.com
3
FDT86102LZ
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
40
5
V
GS
V
GS
V
GS
= 10 V
= 4.5 V
= 3.5 V
V
GS
= 2.5 V
4
3
2
30
20
V
GS
= 3 V
V
GS
= 3 V
V
= 3.5 V
= 10 V
GS
V
GS
= 2.5 V
10
0
1
0
V
GS
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
V
GS
= 4.5 V
20
I , Drain Current (A)
4
, Drain to Source Voltage (V)
5
0
10
30
40
1
2
3
0
V
DS
D
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance vs.
Drain Current and Gate Voltage
150
120
90
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
I
V
= 6.6 A
= 10 V
I
D
= 6.6 A
D
GS
60
30
T = 125°C
J
T = 25°C
J
0
−75 −50 −25
0
25
50
75
100 125 150
2
4
6
8
10
V
GS
, Gate to Source Voltage (V)
T , Junction Temperature (5C)
J
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure 4. On−Resistance vs. Gate to Source
Voltage
40
10
40
30
20
10
V
GS
= 0 V
Pulse Duration = 80 ms
Duty Cycle = 0.5% Max
T = 150°C
J
V
DS
= 5 V
T = 25°C
J
1
0.1
T = 150°C
J
T = −55°C
J
T = 25°C
J
0.01
0.001
T = −55°C
J
0
2
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
3
4
V
GS
, Gate to Source Voltage (V)
V
SD
, Body Diode Forward Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
www.onsemi.com
4
FDT86102LZ
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
10
8
2000
1000
I
D
= 6.6 A
C
V
= 25 V
= 75 V
iss
DD
V
DD
= 50 V
C
C
6
100
10
0
oss
rss
V
DD
4
2
0
f = 1 MHz
GS
V
= 0 V
0
6
0.1
1
10
100
3
9
12
15
18
V
DS
, Drain to Source Voltage (V)
Q , Gate Charge (nC)
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source Voltage
15
12
9
20
10
V
GS
= 10 V
T = 25°C
J
Package Limited
V
GS
= 4.5 V
T = 100°C
J
6
T = 125°C
J
3
R
= 12°C/W
q
JC
0
1
25
50
75
100
125
150
0.001
0.01
0.1
1
10
100
t
, Time in Avalanche (ms)
AV
T , Case Temperature (5C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
−1
50
10
10
10
10
10
10
10
10
10
10
V
GS
= 0 V
100 ms
−2
−3
−4
−5
−6
−7
−8
−9
1 ms
T = 125°C
1
J
10 ms
This Area is
100 ms
Limited by r
DS(on)
T = 25°C
J
0.1
1 s
Single Pulse
T = Max Rated
J
q
10 s
DC
R
= 118°C/W
JA
0.01
0.005
T = 25°C
A
0.01
0.1
1
10
100
500
0
5
10
15
20
25
30
35
V
GS
, Gate to Source Voltage (V)
V
DS
, Drain to Source Voltage (V)
Figure 11. Gate Leakage Current vs
Gate to Source Voltage
Figure 12. Forward Bias Safe Operating Area
www.onsemi.com
5
FDT86102LZ
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
2000
1000
100
10
Single pulse
= 118°C/W
R
q
JA
T = 25°C
A
1
0.5
10
−4
−3
−2
−1
10
10
10
t, Pulse Width (s)
1
10
100
1000
Figure 13. Single Pulse Maximum Power Dissipation
2
1
Duty Cycle − Descending Order
D = 0.5
0.2
0.1
0.1
P
0.05
DM
0.02
0.01
t
1
t
2
0.01
Single pulse
= 118°C/W
Notes:
Duty Factor: D = t /t
R
q
JA
1
2
Peak T = P
x Z
x R
+ T
JA A
q
q
J
DM
JA
0.001
0.0005
−4
−3
−2
−1
10
10
10
10
1
10
100
1000
t, Rectangular Pulse Duration (s)
Figure 14. Junction−to−Ambient Transient Thermal Response Curve
ORDERING INFORMATION
Device
†
Device Marking
Package Type
Shipping
FDT86102LZ
102LZ
SOT−223 (Pb−Free)
4000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
www.onsemi.com
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−223
CASE 318H
ISSUE B
DATE 13 MAY 2020
SCALE 2:1
A
Y
W
= Assembly Location
= Year
= Work Week
GENERIC
MARKING DIAGRAM*
XXXXX = Specific Device Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
AYW
XXXXXG
G
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASH70634A
SOT−223
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
©2020 ICPDF网 联系我们和版权申明