FDT86246L [ONSEMI]
N 沟道，PowerTrench® MOSFET，150V，2A，228mΩ;
| 型号： | FDT86246L |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，150V，2A，228mΩ |
| 文件： | 总8页 (文件大小：259K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – N-Channel,
POWERTRENCH)
150 V, 2 A, 228 mW
D
S
D
FDT86246L
G
SOT−223
CASE 318H
General Description
This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been optimized for r
,
DS(on)
switching performance and ruggedness.
MARKING DIAGRAM
Features
Max r
Max r
= 228 mW at V = 10 V, I = 2 A
GS D
DS(on)
DS(on)
AYW
6246LG
G
= 280 mW at V = 4.5 V, I = 1.8 A
GS
D
High Performance Trench Technology for Extremely Low r
High Power and Current Handling Capability in a widely used
Surface Mount Package
Fast Switching Speed
100% UIL Tested
DS(on)
1
A
Y
W
= Assembly Location
= Year
= Work Week
6246L = Specific Device Code
= Pb−Free Package
(Note: Microdot availability will depend per Assem-
These Devices are Pb−Free and are RoHS Compliant
G
Applications
bly site processed. Device is already Pb−free)
Load Switch
Primary Switch
Buck/Boost Switch
PIN ASSIGNMENT
D
Specifications
MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted)
A
Symbol
Parameter
Drain to Source Voltage
Ratings
150
Unit
V
V
DS
V
GS
Gate to Source Voltage
Drain Current
20
V
G
S
D
I
D
Continuous T = 25C
2
A
A
(Note 1a)
Pulsed (Note 4)
20
6
E
Single Pulse Avalanche Energy (Note 3)
Power Dissipation
T = 25C (Note 1a)
mJ
W
AS
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
P
2.2
1.0
D
A
T = 25C (Note 1b)
A
T , T
Operating and Storage Junction
Temperature Range
−55 to +150 C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
Novembere, 2022 − Rev. 3
FDT86246L/D
FDT86246L
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
12
Unit
R
R
Thermal Resistance, Junction to Case (Note 1)
Thermal Resistance, Junction to Ambient (Note 1a)
_C/W
q
JC
JA
JA
55
q
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
JC
q
q
by design while R
is determined by the user’s board design.
q
JA
2
a. 55C/W when mounted on a 1 in pad
b. 118C/W when mounted on a minimum
of 2 oz copper
pad
ORDERING INFORMATION
Device
†
Device Marking
Package Type
Shipping
FDT86246L
86246L
SOT−223 (Pb−Free)
4000 units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
FDT86246L
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
150
V
DSS
D
GS
DBV
/
Breakdown Voltage Temperature
Coefficient
= 250 mA, referenced to 25C
110
mV/C
DSS
D
DT
J
DSS
GSS
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 120 V, V = 0 V
1
mA
DS
GS
I
= 20 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V , I = 250 mA
0.8
1.6
2.5
V
DS
D
DV
/
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= 250 mA, referenced to 25C
−5
mV/C
GS(th)
J
DT
r
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 2 A
189
208
375
7.3
228
280
452
mW
DS(on)
D
= 4.5 V, I = 1.8 A
D
= 10 V, I = 2 A, T = 125C
D
J
g
FS
= 10 V, I = 2 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 75 V, V = 0 V, f = 1 MHz
238
20
2
335
30
5
pF
pF
pF
W
iss
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
0.1
0.9
2.7
g
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Rise Time
V
= 75 V, I = 2 A, V = 10 V,
GEN
4.5
1.3
11
10
10
ns
ns
d(on)
DD
D
GS
R
= 6 W
t
r
t
Turn−Off Delay Time
Fall Time
20
ns
d(off)
t
f
2
10
ns
Q
Total Gate Charge
V
GS
V
GS
V
DD
= 0 V to 10 V, V = 75 V, I = 2 A
4.5
2.3
0.7
1.0
6.3
3.3
nC
nC
nC
nC
g(TOT)
DD
D
= 0 V to 4.5 V, V = 75 V, I = 2 A
DD
D
Q
Q
Gate to Source Charge
= 75 V, I = 2 A
D
gs
Gate to Drain “Miller” Charge
gd
DRAIN−SOURCE DIODE CHARACTERISTICS
V
SD
Source to Drain Diode Forward
Voltage
V
GS
= 0 V, I = 2 A (Note 2)
0.8
1.3
V
S
t
Reverse Recovery Time
I = 2 A, di/dt = 100 A/ms
F
44
31
71
50
ns
rr
Q
Reverse Recovery Charge
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. E of 6 mJ is based on starting T = 25C; N−ch: L = 3 mH, I = 2 A, V = 150 V, V = 10 V. 100% test at L = 0.1 mH, I = 7 A.
AS
J
AS
DD
GS
AS
4. Pulsed Id please refer to Figure 11 SOA graph for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal &
electro−mechanical application board design.
www.onsemi.com
3
FDT86246L
TYPICAL CHARACTERISTICS (T = 25C unless otherwise noted)
J
6
5
4
3
2
1
0
5
VGS = 10 V
VGS = 4.5 V
VGS = 3.5 V
VGS = 2.5 V
4
VGS = 3 V
V
GS = 3 V
3
2
1
0
VGS = 3.5 V
VGS = 2.5 V
VGS = 10 V
VGS = 4.5 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
0
2
4
6
0
1
2
3
4
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance vs.
Drain Current and Gate Voltage
2.5
800
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
ID = 2 A
VGS = 10 V
ID = 2 A
2.0
1.5
1.0
0.5
600
400
TJ = 125 o
C
200
0
TJ = 25 o
C
−75 −50 −25
0
25 50 75 100 125 150
0
1
2
3
4
5
6
7
8
9
10
T , JUNCTION TEMPERATURE (C)
J
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure 4. On−Resistance vs. Gate to Source
Voltage
6
6
PULSE DURATION = 80ms
VGS = 0 V
DUTY CYCLE = 0.5% MAX
5
1
VDS = 5 V
4
TJ = 150 o
C
TJ = 150 o
C
0.1
0.01
3
2
1
0
T
J = 25 o
C
TJ = 25 o
C
T
J = −55oC
TJ = −55oC
0.001
1
2
3
4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
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4
FDT86246L
TYPICAL CHARACTERISTICS (T = 25C unless otherwise noted) (continued)
J
10
8
1000
ID = 2 A
Ciss
VDD = 50 V
100
Coss
6
VDD = 75 V
4
V
DD = 100 V
Crss
10
1
2
f = 1 MHz
VGS = 0 V
0
0
1
2
3
4
5
0.1
1
10
, DRAIN TO SOURCE VOLTAGE (V)
DS
100
Q , GATE CHARGE (nC)
V
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source Voltage
30
10
9
10
8
10 ms
7
6
5
TJ = 25 o
C
1
100 ms
4
3
TJ = 100 o
C
1 ms
10 ms
100 ms
1 s
THIS AREA IS
LIMITED BY r
0.1
0.01
DS(on)
SINGLE PULSE
2
T = MAX RATED
J
10 s
TJ = 125 o
C
R
qJA = 118oC/W
DC
CURVE BENT TO
MEASURED DATA
T
A = 25 oC
0.001
1
0.1
1
10
100
600
0.001
0.01
0.1
1
t , TIME IN AVALANCHE (ms)
AV
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Forward Bias Safe Operating Area
10000
1000
100
10
SINGLE PULSE
R
qJA = 118 oC/W
TA = 25 o
C
1
0.1
10−5
10−4
10−3
10−2
t, PULSE WIDTH (s)
10−1
100
101
100
1000
Figure 11. Single Pulse Maximum Power Dissipation
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5
FDT86246L
TYPICAL CHARACTERISTICS (T = 25C unless otherwise noted) (continued)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.01
P
DM
0.1
0.05
0.02
0.01
t
1
t
2
NOTES:
SINGLE PULSE
Z
R
(t) = r(t) x R
o
0.001
0.001
qJA
qJA
= 118 C/W
qJA
Peak T = P
Duty Cycle, D = t / t
x Z
(t) + T
qJA A
J
DM
1
2
10−5
10−4
10−3
10−2
t, RECTANGULAR PULSE DURATION (s)
10−1
100
101
100
1000
Figure 12. Junction−to−Ambient Transient Thermal Response Curve
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−223
CASE 318H
ISSUE B
DATE 13 MAY 2020
SCALE 2:1
A
Y
W
= Assembly Location
= Year
= Work Week
GENERIC
MARKING DIAGRAM*
XXXXX = Specific Device Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
AYW
XXXXXG
G
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASH70634A
SOT−223
PAGE 1 OF 1
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