FDV301N-F169 [ONSEMI]
N 沟道，数字 FET，25V，0.22A，4Ω;
| 型号： | FDV301N-F169 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，数字 FET，25V，0.22A，4Ω 开关 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：224K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Digital FET, N-Channel
D
FDV301N, FDV301N-F169
General Description
This N−Channel logic level enhancement mode field effect
transistor is produced using onsemi’s proprietary, high cell density,
DMOS technology. This very high density process is especially
tailored to minimize on−state resistance. This device has been
designed especially for low voltage applications as a replacement for
digital transistors. Since bias resistors are not required, this one
N−channel FET can replace several different digital transistors, with
different bias resistor values.
G
S
SOT−23
CASE 318−08
Features
• 25 V, 0.22 A Continuous, 0.5 A Peak
MARKING DIAGRAM
♦ R
♦ R
= 5 W @ V = 2.7 V
GS
DS(on)
= 4 W @ V = 4.5 V
DS(on)
GS
&E&Y
301&E&G
• Very Low Level Gate Drive Requirements Allowing Direct
Operation in 3 V Circuits. V < 1.06 V
GS(th)
• Gate−Source Zener for ESD Ruggedness. > 6 kV Human Body
Model
• Replace Multiple NPN Digital Transistors with One DMOS FET
• This Device is Pb−Free and Halide Free
&E
&Y
= Designates Space
= Binary Calendar Year
Coding Scheme
= Specific Device Code
= Date Code
301
&G
Vcc
D
ORDERING INFORMATION
OUT
†
Device
Package
Shipping
3000 /
Tape & Reel
FDV301N,
FDV301N−F169
SOT−23−3
(Pb−Free,
IN
G
S
Halide−Free)
GND
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Figure 1. Inverter Application
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
August, 2021 − Rev. 8
FDV301N/D
FDV301N, FDV301N−F169
ABSOLUTE MAXIMUM RATINGS T = 25°C unless otherwise noted.
A
Symbol
, V
Parameter
Drain−Source Voltage, Power Supply Voltage
Gate−Source Voltage, V
FDV301N
Unit
V
V
25
8
DSS
CC
V
GSS
, V
I
V
IN
I , I
Drain/Output Current − Continuous
0.22
0.5
A
D
O
P
Maximum Power Dissipation
0.35
−55 to 150
6.0
W
°C
kV
D
T , T
Operating and Storage Temperature Range
J
STG
ESD
Electrostatic Discharge Rating MIL−STD−883D Human Body Model
(100 pF/1500 W)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS T = 25°C unless otherwise noted.
A
Symbol
Parameter
Value
Unit
R
Thermal Resistance, Junction−to−Ambient
357
°C/W
θ
JA
INVERTER ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted.
A
Symbol
Parameter
Zero Input Voltage Output Current
Input Voltage
Test Conditions
= 20 V, V = 0 V
Min
−
Typ
−
Max
1
Unit
mA
V
I
V
V
V
O(off)
CC
I
V
= 5 V, I = 10 mA
−
−
0.5
−
I(off)
I(on)
CC
O
V
= 0.3 V, I = 0.005 A
1
−
O
O
R
Output to Ground Resistance
V = 2.7 V, I = 0.2 A
−
4
5
W
O(on)
I
O
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted.
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain−Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
V
I
= 0 V, I = 250 mA
25
−
−
25
−
−
−
V
DSS
GS
D
DBV
/DT
= 250 mA, Referenced to 25°C
mV/°C
mA
DSS
J
D
I
V
DS
V
DS
V
GS
= 20 V, V = 0 V
−
1
DSS
GS
= 20 V, V = 0 V, T = 55°C
−
−
10
100
GS
J
I
Gate − Body Leakage Current
= 8 V, V = 0 V
−
−
nA
GSS
DS
ON CHARACTERISTICS
DV
/DT
Gate Threshold Voltage Temp.
Coefficient
I
D
= 250 mA, Referenced to 25°C
−
−2.1
−
mV/°C
GS(th)
J
V
Gate Threshold Voltage
V
DS
V
GS
V
GS
V
GS
V
GS
V
DS
= V , I = 250 mA
0.70
−
0.85
3.8
6.3
3.1
−
1.06
5
V
GS(th)
GS
D
R
Static Drain−Source On−Resistance
= 2.7 V, I = 0.2 A
W
DS(on)
D
= 2.7 V, I = 0.2 A, T = 125°C
−
9
D
J
= 4.5 V, I = 0.4 A
−
4
D
I
On−State Drain Current
= 2.7 V, V = 5 V
0.2
−
−
A
S
D(on)
DS
g
FS
Forward Transconductance
= 5 V, I = 0.4 A
0.2
−
D
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2
FDV301N, FDV301N−F169
ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted. (continued)
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 10 V, V = 0 V, f = 1.0 MHz
−
−
−
9.5
6
−
−
−
pF
iss
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
1.3
rss
SWITCHING CHARACTERISTICS (Note 1)
t
Turn − On Delay Time
Turn − On Rise Time
Turn − Off Delay Time
Turn − Off Fall Time
Total Gate Charge
V
= 6 V, I = 0.5 A, V = 4.5 V,
GEN
−
−
−
−
−
−
−
3.2
6
8
15
8
ns
D(on)
DD
D
GS
R
= 50 W
t
r
t
3.5
D(off)
t
f
3.5
8
Q
V
DS
= 5 V, I = 0.2 A, V = 4.5 V
0.49
0.22
0.07
0.7
−
nC
g
D
GS
Q
Gate−Source Charge
Gate−Drain Charge
gs
gd
Q
−
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain−Source Diode Forward Current
Drain−Source Diode Forward Voltage = 0 V, I = 0.29 A (Note 1)
I
−
−
−
0.29
1.2
A
V
S
V
SD
V
GS
0.8
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
TYPICAL CHARACTERISTICS
0.5
0.4
1.4
1.2
1
V
= 4.5 V
V
= 2.0 V
3.5 V
GS
GS
4.0 V
3.0 V
2.5 V
2.7 V
3.0 V
2.7 V
2.5 V
0.3
0.2
0.1
0
3.5 V
2.0 V
1.5 V
0.8
0.6
4.0 V
4.5 V
0
0.5
1
1.5
2
2.5
3
0
0.1
0.2
0.3
0.4
0.5
V
DS
, Drain−Source Voltage (V)
I , Drain Current (A)
D
Figure 2. On−Region Characteristics
Figure 3. On−Resistance Variation with Drain
Current and Gate Voltage
www.onsemi.com
3
FDV301N, FDV301N−F169
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
1.8
1.6
15
12
I
D
= 0.2 A
I
V
= 0.2 A
D
= 2.7 V
GS
1.4
1.2
125°C
25°C
9
6
3
0
1.0
0.8
0.6
−50
−25
0
25
50
75
100 125 150
2
2.5
3
3.5
4
T , Junction Temperature (5C)
J
V
GS
, Gate to Source Voltage (V)
Figure 4. On−Resistance Variation with Temperature
Figure 5. On Resistance Variation with
Gate−To−Source Voltage
0.20
0.5
V
GS
= 0 V
V
DS
= 5.0 V
T = −55°C
J
0.2
0.1
25°C
T = 125°C
J
0.15
0.10
0.05
125°C
25°C
0.01
0.001
−55°C
0
0.5
0.0001
1
1.5
2
2.5
0.2
0.4
0.6
0.8
1
1.2
V
GS
, Gate to Source Voltage (V)
V
SD
, Body Diode Forward Voltage (V)
Figure 6. Transfer Characteristics
Figure 7. Body Diode Forward Voltage Variation
with Source Current and Temperature
5
4
3
2
1
30
I
D
= 0.2 A
V
= 5 V
20
DS
10 V
15 V
C
C
iss
10
oss
5
3
2
f = 1 MHz
= 0 V
V
C
GS
rss
0
1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.1
0.5
, Drain to Source Voltage (V)
DS
1
2
5
10
25
Q , Gate Charge (nC)
g
V
Figure 8. Gate Charge Characteristics
Figure 9. Capacitance Characteristics
www.onsemi.com
4
FDV301N, FDV301N−F169
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
1
5
Single Pulse
= 357°C/W
T = 25°C
A
1 ms
R
0.5
q
JA
R
Limit
DC
DS(on)
4
3
2
1
1 s
100 ms
10 s
0.2
0.1
0.05
V
= 2.7 V
GS
Single Pulse
R
T = 25°C
= 357°C/W
0.02
0.01
q
JA
A
0
0.5
1
2
5
10 15
25 35
0.001
0.01
0.1
1
10
100 300
V
DS
, Drain−Source Voltage (V)
Single Pulse Time (s)
Figure 10. Maximum Safe Operating Area
Figure 11. Single Pulse Maximum Power Dissipation
1
D = 0.5
0.2
0.5
0.2
R
R
(t) = r(t) * R
= 357°C/W
0.1
q
q
q
JA
JA
JA
0.1
0.05
0.05
0.02
P(pk)
0.02
0.01
t
1
0.01
t
2
0.005
T − T = P * R (t)
q
JA
J
A
Single Pulse
Duty Cycle, D = t /t
1
2
0.002
0.001
0.0001
0.001
0.01
0.1
t , Time (s)
1
10
100
300
1
Figure 12. Transient Thermal Response Curve
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318
ISSUE AT
DATE 01 MAR 2023
SCALE 4:1
GENERIC
MARKING DIAGRAM*
XXXMG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLES ON PAGE 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
PAGE 1 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318
ISSUE AT
DATE 01 MAR 2023
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1. EMITTER
2. BASE
STYLE 8:
PIN 1. BASE
PIN 1. ANODE
2. EMITTER
3. COLLECTOR
2. NO CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. ANODE
STYLE 10:
STYLE 11:
PIN 1. ANODE
2. CATHODE
STYLE 12:
STYLE 13:
PIN 1. SOURCE
2. DRAIN
STYLE 14:
PIN 1. CATHODE
2. GATE
PIN 1. DRAIN
2. SOURCE
3. GATE
PIN 1. CATHODE
2. CATHODE
3. ANODE
3. CATHODE
3. CATHODE−ANODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. CATHODE
2. ANODE
PIN 1. GATE
2. CATHODE
3. ANODE
PIN 1. ANODE
2. CATHODE
3. CATHODE
PIN 1. NO CONNECTION PIN 1. CATHODE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE−ANODE
3. CATHODE
3. GATE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1. ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1. GATE
2. SOURCE
3. DRAIN
PIN 1. RETURN
2. OUTPUT
3. INPUT
PIN 1. GATE
2. DRAIN
PIN 1. ANODE
2. CATHODE
3. GATE
PIN 1. CATHODE
2. ANODE
3. SOURCE
3. NO CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
PIN 1. ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
PAGE 2 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
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For additional information, please contact your local Sales Representative at
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