FDY100PZ [ONSEMI]

P 沟道，(-2.5 V) 指定，PowerTrench® MOSFET，-20V，-0.35A，1.2Ω;


型号：	FDY100PZ
厂家：	ONSEMI
描述：	P 沟道，(-2.5 V) 指定，PowerTrench® MOSFET，-20V，-0.35A，1.2Ω 开关光电二极管晶体管
文件：	总7页 (文件大小：280K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or

subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi

product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without

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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,

regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/

or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application

by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized

for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for

implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,

subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative

Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.

FDY100PZ

Single P-Channel (– 2.5V) Specified PowerTrench^MOSFET

General Description

Features

This Single P-Channel MOSFET has been

designed using ON Semiconductor’s advanced

• – 350 mA, – 20 V R_DS(ON)= 1.2 Ω @ V_GS= – 4.5 V

_DS(ON)= 1.6 Ω @ V_GS= – 2.5 V

Power Trench process to optimize the R_DS(ON)@ V_GS

– 2.5v.

Applications

• ESD protection diode (note 3)

• RoHS Compliant

• Li-Ion Battery Pack

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

Parameter

Ratings

Unit

V_DSS

V_GSS

I_D

Drain-Source Voltage

– 20

± 8

– 350

– 1000

625

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

(Note 1a) 1

P_D

Power Dissipation (Steady State)

(Note 1a) 1

(Note 1b) 1

446

T_J, T_STG

Operating and Storage Junction Temperature

Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient (Note 1a) 1

200

280

R_θJA

°C/W

Thermal Resistance, Junction-to-Ambient ^{(Note 1b) 1}

R_θJA

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDY100PZ

7’’

8mm

3000 units

Publication Order Number:

FDY100PZ/D

2006 Semiconductor Components Industries, LLC.

October-2017, Rev 1

Electrical Characteristics

T_A= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BV_DSS

Drain–Source Breakdown

– 20

V_GS= 0 V,

I_D= – 250 µA

Voltage

Breakdown Voltage Temperature

Coefficient

∆BVDSS

∆T_J

I_D= – 250 µA, Referenced to 25°C

mV/°C

I_DSS

Zero Gate Voltage Drain Current V_DS= – 16 V, V_GS= 0 V

Gate–Body Leakage,

– 3

µA

I_GSS

V_GS= ± 8 V,

V_DS= 0 V

± 10

On Characteristics

(Note 2)

V_GS(th)

Gate Threshold Voltage

– 0.65 –1.0 – 1.5

–3

_DS= V_GS

I_D= – 250 µA

Gate Threshold Voltage

Temperature Coefficient

∆V_GS(th)

∆T_J

R_DS(on)

I_D= 250 µA, Referenced to 25°C

mV/°C

Static Drain–Source

On–Resistance

V_GS= – 4.5 V, I_D= – 350 mA

V_GS= – 2.5 V, I_D= – 300 mA

V_GS= – 1.8 V, I_D= – 150 mA

V_GS= – 4.5 V, I_D= – 350 mA,

T_J=125°C

0.5

0.8

1.3

0.7

1.2

1.6

2.7

1.6

Ω

g_FS

Forward Transconductance

V_DS= – 5 V,

I_D= – 350 mA

Dynamic Characteristics

C_iss

C_oss

C_rss

Input Capacitance

100

V_DS= – 10 V, V_GS= 0 V,

f = 1.0 MHz

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics (Note 2)

t_d(on)

t_r

t_d(off)

t_f

Turn–On Delay Time

Turn–On Rise Time

Turn–Off Delay Time

Turn–Off Fall Time

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

_DD= – 10 V, I_D= – 0.5 A,

V_GS= – 4.5 V, R_GEN= 6 Ω

Q_g

Q_gs

Q_gd

1.0

0.2

0.3

1.4

V_DS= – 10 V, I_D= – 350 mA,

V_GS= – 4.5 V

Drain–Source Diode Characteristics and Maximum Ratings

V_SD

Drain–Source Diode Forward

Voltage

V_GS= 0 V, I_S= – 150 m A(Note 2)

–0.8 – 1.2

t_rr

Diode Reverse Recovery Time

Diode Reverse Recovery Charge

I_F= – 350 mA,

dI_F/dt = 100 A/µs

Q_rr

Notes:

1. R_θJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. R_θJCis guaranteed by design while R_θCAis determined by the user's board design.

200°C/W when

b) 280°C/W when mounted on a

minimum pad of 2 oz copper

Scale 1 : 1 on letter size paper

mounted on a 1in²pad

of 2 oz copper

2. Pulse Test: Pulse Width < 300µs,

Duty Cycle < 2.0%

3. The diode connected between the gate

and source serves only as protection

againts ESD. No gate overvoltage

rating is implied.

www.onsemi.com

Typical Characteristics

2.6

2.2

1.8

1.4

V_GS=-1.8V

-2.0V

V_GS= -4.5V

-4.0V

-2.5V

0.8

0.6

0.4

0.2

-3.0V

-2.0V

-2.5V

-1.8V

-3.0V

-3.5V

-4.0V

-4.5V

0.6

0.2

0.4

0.6

0.8

0.5

1.5

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

-I_D, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6

1.4

1.2

I_D= -0.35A

V_GS= -4.5V

I_D= -0.175A

1.75

1.5

1.25

T_A= 125^oC

0.75

0.5

0.8

0.6

T_A= 25^oC

0.25

-50

-25

100

125

150

T_J, JUNCTION TEMPERATURE (^oC)

-V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

0.8

0.6

0.4

0.2

V_GS= 0V

V_DS= -5V

0.1

0.01

0.001

T_A= 125^oC

25^oC

-55^oC

25^oC

0.0001

0.5

1.5

2.5

0.2

0.4

0.6

0.8

1.2

1.4

-V_GS, GATE TO SOURCE VOLTAGE (V)

-V_SD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

www.onsemi.com

Typical Characteristics

150

125

100

f = 1 MHz

_GS= 0 V

I_D= -0.35A

V_DS= -5V

-15V

C_iss

-10V

C_oss

C_rss

0.5

1.5

2.5

Q_g, GATE CHARGE (nC)

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

SINGLE PULSE

R_θJA= 280°C/W

_A= 25°C

100µs

R_DS(ON)LIMIT

1ms

10ms

100ms

10s

0.1

0.01

V_GS= -4.5V

SINGLE PULSE

R_θJA= 280^oC/W

T_A= 25^oC

0.01

0.1

100

0.0001

0.001

0.01

0.1

100

-V_DS, DRAIN-SOURCE VOLTAGE (V)

t₁, TIME (sec)

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

D = 0.5

R_θJA(t) = r(t) * R_θJA

R_θJA=280 °C/W

0.2

P(pk)

0.1

0.05

t₁

t₂

0.02

0.01

T_J- T_A= P * R_θJA(t)

Duty Cycle, D = t₁/ t₂

SINGLE PULSE

0.01

0.0001

0.001

0.01

0.1

100

1000

t₁, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.

www.onsemi.com

Dimensional Outline and Pad Layout

1.70

1.50

0.35

0.25

0.50

1.70

1.50

0.98

0.78

1.14

1.80

(0.15)

0.50

0.66

0.50

1.00

LAND PATTERN RECOMMENDATION

0.78

0.58

0.20

0.04

SEE DETAIL A

0.43

0.28

0.54

0.34

DETAIL A

0.10

0.00

SCALE 2 : 1

NOTES: UNLESS OTHERWISE SPECIFIED

A) THIS PACKAGE CONFORMS TO EIAJ

SC89 PACKAGING STANDARD.

B) ALL DIMENSIONS ARE IN MILLIMETERS.

C) DIMENSIONS ARE EXCLUSIVE OF BURRS,

MOLD FLASH, AND TIE BAR EXTRUSIONS.

www.onsemi.com

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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❖

FDY100PZ [ONSEMI]

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