FDY102PZ [ONSEMI]

P 沟道 (-1.5V) 指定 PowerTrench® MOSFET -20V，-0.83A，0.5Ω;


型号：	FDY102PZ
厂家：	ONSEMI
描述：	P 沟道 (-1.5V) 指定 PowerTrench® MOSFET -20V，-0.83A，0.5Ω 光电二极管晶体管
文件：	总9页 (文件大小：396K)
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April 2014

FDY102PZ

Single P-Channel (–1.5 V) Specified PowerTrench^®MOSFET

–20 V, –0.83 A, 0.5 Ω

Features

General Description

Max r_DS(on)= 0.5 Ω at V_GS= –4.5 V, I_D= –0.83 A

Max r_DS(on)= 0.7 Ω at V_GS= –2.5 V, I_D= –0.70 A

Max r_DS(on)= 1.2 Ω at V_GS= –1.8 V, I_D= –0.43 A

Max r_DS(on)= 1.8 Ω at V_GS= –1.5 V, I_D= –0.36 A

HBM ESD protection level = 1400 V (Note 3)

RoHS Compliant

This Single P-Channel MOSFET has been designed using

Fairchild Semiconductor’s advanced Power Trench process to

optimize the r_DS(on)@V_GS= –1.5 V.

Application

Li-Ion Battery Pack

3 D

SC89-3

MOSFET Maximum Ratings T_A= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

–20

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous

-Pulsed

±8

(Note 1a)

–0.83

–1.0

I_D

Power Dissipation

(Note 1a)

(Note 1b)

0.625

0.446

P_D

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

R_θJA

Thermal Resistance, Junction to Ambient

(Note 1a)

(Note 1b)

200

280

°C/W

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

8 mm

Quantity

FDY102PZ

SC89-3

7 ”

3000 units

FDY102PZ Rev.B3

www.fairchildsemi.com

Electrical Characteristics T_J= 25 °C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BV_DSS

Drain to Source Breakdown Voltage

I_D= –250 μA, V_GS= 0 V

–20

ΔBV_DSS

ΔT_J

Breakdown Voltage Temperature

Coefficient

_D= –250 μA, referenced to 25 °C

-11

mV/°C

I_DSS

I_GSS

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

V_DS= –16 V, V_GS= 0 V

V_GS= ±8 V, V_DS= 0 V

V_GS= ±5 V, V_DS= 0 V

–1

μA

±10

±0.5

On Characteristics (Note 2)

V_GS(th)

Gate to Source Threshold Voltage

V_GS= V_DS, I_D= –250 μA

–0.4

–0.7

–1.0

ΔV_GS(th)

ΔT_J

Gate to Source Threshold Voltage

Temperature Coefficient

_D= –250 μA, referenced to 25 °C

mV/°C

_GS= –4.5 V, I_D= –0.83 A

0.28

0.36

0.47

0.62

0.5

0.7

1.2

1.8

V_GS= –2.5 V, I_D= –0.70 A

V_GS= –1.8 V, I_D= –0.43 A

V_GS= –1.5 V, I_D= –0.36 A

r_DS(on)

Static Drain to Source On-Resistance

Forward Transconductance

V_GS= –4.5 V, I_D= –0.83 A,

T_J=125 °C

0.39

0.85

g_FS

V_DD= –5 V, I_D= –0.83 A

Dynamic Characteristics

C_iss

C_oss

C_rss

Input Capacitance

100

135

V_DS= –10 V, V_GS= 0 V,

f = 1 MHz

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics (Note 2)

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Rise Time

3.5

2.9

3.1

V_DD= –10 V, I_D= –0.83 A

_GS= –4.5 V, R_GEN= 6 Ω

Turn-Off Delay Time

Fall Time

Q_g

Total Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

2.2

0.3

0.6

V_DD= –10 V, I_D= –0.83 A

_GS= –4.5 V

Q_gs

Q_gd

Drain-Source Diode Characteristics and Maximum Rating

I_S

Maximum Continuous Drain-Source Diode Forward Current

–0.52

–1.2

V_SD

t_rr

Source to Drain Diode Forward Voltage

Reverse Recovery Time

V_GS= 0 V, I_S= –0.52 A

(Note 2)

–1.0

I_F= –0.83 A, dI_F/dt = 100 A/μs

Q_rr

Reverse Recovery Charge

3.8

Notes:

1. R

is determined with the device mounted on a 1 in oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

is guaranteed by design while R is determined by the

θJA

θJC

user's board design.

a) 200 C/W when mounted on

b) 280 C/W when mounted on a

minimum pad of 2 oz copper.

a 1 in pad of 2 oz copper.

2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0%

3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

www.fairchildsemi.com

FDY102PZ Rev.B3

Typical Characteristics T_J= 25 °C unless otherwise noted

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

1.0

V_GS= -4.5 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5%MAX

V_GS= -1.5 V

V_GS= -2.5 V

0.8

V_GS= -1.5 V

V_GS= -1.8 V

0.6

V_GS= -2.0V

V_GS= -2.0 V

V_GS= -1.8 V

0.4

V_GS= -2.5 V

0.2

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

0.0

V_GS= -4.5 V

2.0

0.5

1.0

1.5

2.0

0.0

0.5

1.0

1.5

2.5

-I_D, DRAIN CURRENT (A)

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 1. On Region Characteristics

Figure2. N o r m a l i z e d O n - R e s i s ta n c e

vs Drain Current and Gate Voltage

1.6

2.0

I_D= -0.83 A

_GS= -4.5 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

1.4

1.2

1.0

0.8

0.6

1.6

1.2

0.8

0.4

0.0

I_D= -0.415 A

T_J= 125 ^o

T_J= 25 ^o

-75 -50 -25

25 50 75 100 125 150

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

T_J, JUNCTION TEMPERATURE (^oC)

-V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On Resistance

vs Junction Temperature

Figure4. On-Resistance vs Gate to

Source Voltage

1.0

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

V_GS= 0 V

T_J= 125 ^o

0.8

0.6

0.4

0.2

0.0

V_DS= -5 V

0.1

0.01

T_J= 125 ^oC

T_J= 25 ^o

T_J= -55 ^o

0.001

0.5

1.0

1.5

2.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

-V_SD, BODY DIODE FORWARD VOLTAGE (V)

-V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure6. Source to Drain Diode

Forward Voltage vs Source Current

www.fairchildsemi.com

FDY102PZ Rev.B3

Typical Characteristics T_J= 25 °C unless otherwise noted

500

100

I_D= -0.83 A

C_iss

C_oss

V_DD= -8 V

V_DD= -10 V

C_rss

V_DD= -12 V

f = 1 MHz

= 0 V

0.0

0.1

0.5

1.0

1.5

2.0

2.5

3.0

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

Q_g, GATE CHARGE (nC)

Figure 7. Gate Charge Characteristics

Figure8. C a p a c i t a n c e v s D r a i n

to Source Voltage

10⁵

V_GS= 0 V

1 ms

10³

10¹

10^-1

10^-3

10 ms

100 ms

THIS AREA IS

T_J= 125 ^oC

LIMITED BY r

0.1

DS(on)

SINGLE PULSE

T_J= MAX RATED

1 s

10 ms

T_J= 25 ^o

_θJA= 280 ^oC/W

T_A= 25 ^oC

0.01

0.1

-V_GS, GATE TO SOURCE VOLTAGE (V)

-V_DS, DRAIN to SOURCE VOLTAGE (V)

F i g u r e 9 . G a t e L e a k a g e C u r r e n t

vs Gate to Source Voltage

Figure10. Forward Bias Safe

Operating Area

V_GS= -4.5 V

SINGLE PULSE

R_θJA= 280 ^oC/W

T_A= 25 ^o

0.2

10^-3

10^-2

10^-1

10⁰

t, PULSE WIDTH (sec)

10¹

100

1000

Figure 11. Single Pulse Maximum Power Dissipation

www.fairchildsemi.com

FDY102PZ Rev.B3

Typical Characteristics T_J= 25 °C unless otherwise noted

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

0.1

NOTES:

DUTY FACTOR: D = t /t

SINGLE PULSE

R_θJA= 280 ^oC/W

PEAK T = P

x Z

x R

+ T

θJA A

θJA

0.02

10^-3

10^-2

10^-1

t, RECTANGULAR PULSE DURATION (sec)

10⁰

10¹

100

1000

Figure 12. Junction-to-Ambient Transient Thermal Response Curve

www.fairchildsemi.com

FDY102PZ Rev.B3

Dimensional Outline and Pad Layout

1.70

1.50

0.35

0.25

0.50

1.70

1.50

0.98

0.78

1.14

1.80

(0.15)

0.50

0.66

0.50

1.00

LAND PATTERN RECOMMENDATION

0.78

0.58

0.20

0.04

SEE DETAIL A

0.43

0.28

0.54

0.34

DETAIL A

0.10

0.00

SCALE 2 : 1

NOTES: UNLESS OTHERW ISE SPECIFIED

A) THIS PACKAGE CONFORMS TO EIAJ

SC89 PACKAGING STANDARD.

B) ALL DIMENSIONS ARE IN MILLIMETERS.

C) DIMENSIONS ARE EXCLUSIVE OF BURRS,

MOLD FLASH, AND TIE BAR EXTRUSIONS.

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner

without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or

obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, spe-

cifically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_NMADA-003

www.fairchildsemi.com

FDY102PZ Rev.B3

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AccuPower™

AX-CAP *

BitSiC™

Build it Now™

CorePLUS™

CorePOWER™

CROSSVOLT™

CTL™

F-PFS™

FRFET

®*

Global Power Resource^SM

GreenBridge™

Green FPS™

PowerTrench

PowerXS™

Programmable Active Droop™

QFET

QS™

Quiet Series™

RapidConfigure™

™

TinyBoost

TinyBuck

TinyCalc™

Green FPS™ e-Series™

Gmax™

GTO™

TinyLogic

TINYOPTO™

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TinyPWM™

TinyWire™

Current Transfer Logic™

IntelliMAX™

DEUXPEED

ISOPLANAR™

Marking Small Speakers Sound Louder

and Better™

MegaBuck™

MICROCOUPLER™

MicroFET™

MicroPak™

MicroPak2™

MillerDrive™

MotionMax™

Dual Cool™

TranSiC™

EcoSPARK

Saving our world, 1mW/W/kW at a time™

SignalWise™

SmartMax™

TriFault Detect™

TRUECURRENT *

EfficentMax™

ESBC™

μSerDes™

SMART START™

Solutions for Your Success™

SPM

Fairchild

STEALTH™

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SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SupreMOS

SyncFET™

Sync-Lock™

UHC

Fairchild Semiconductor

FACT Quiet Series™

Ultra FRFET™

UniFET™

VCX™

VisualMax™

VoltagePlus™

XS™

mWSaver

OptoHiT™

OPTOLOGIC

OPTOPLANAR

FACT

FAST

FastvCore™

FETBench™

FPS™

仙童 ™

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Datasheet Identification

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Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.

Advance Information

Formative / In Design

Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without

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First Production

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No Identification Needed

Obsolete

Full Production

Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.

Not In Production

Rev. I68

FDY102PZ Rev. B3

www.fairchildsemi.com

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

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FDY102PZ [ONSEMI]

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