FDY302NZ [ONSEMI]
N 沟道 2.5V 额定 PowerTrench® MOSFET 20V，0.6A，0.3Ω;
| 型号： | FDY302NZ |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 2.5V 额定 PowerTrench® MOSFET 20V，0.6A，0.3Ω |
| 文件： | 总8页 (文件大小：379K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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JANUARY 2014
FDY302NZ
Single N-Channel 2.5V Specified PowerTrench® MOSFET
General Description
Features
This Single N-Channel MOSFET has been designed
using Fairchild Semiconductor’s advanced Power
Trench process to optimize the RDS(ON) @ VGS = 2.5V.
• 600 mA, 20 V RDS(ON) = 300 mΩ @ VGS = 4.5 V
DS(ON) = 500 mΩ @ VGS = 2.5 V
R
Applications
• ESD protection diode (note 3)
• RoHS Compliant
• Li-Ion Battery Pack
S
G
S
1
2
G
3
D
D
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
Ratings
Unit
s
VDS
VGS
ID
Drain-Source Voltage
20
12
600
1000
V
V
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
mA
PD
Power Dissipation (Steady State)
(Note 1a)
(Note 1b)
625
446
mW
TJ, TSTG
Operating and Storage Junction Temperature
Range
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient (Note 1a)
Thermal Resistance, Junction-to-Ambient (Note 1b)
200
280
RθJA
°C/W
RθJA
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
F
FDY302NZ
7 ’’
8 mm
3000 units
www.fairchildsemi.com
©2006 Fairchild Semiconductor Corporation
FDY302NZ Rev B
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown
20
V
VGS = 0 V,
ID = 250 µA
Voltage
Breakdown Voltage Temperature
15
∆BVDSS
∆TJ
ID = 250 µA, Referenced to 25°C
mV/°C
Coefficient
IDSS
Zero Gate Voltage Drain Current VDS = 16 V,
Gate–Body Leakage,
VGS = 0 V
12 V, VDS = 0 V
4.5 V, VDS = 0 V
1
10
1
µA
µA
µA
IGSS
VGS
VGS
=
=
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
0.6
1.0
3
1.5
V
VDS = VGS
ID = 250 µA, Referenced to 25°C
,
ID = 250 µA
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
∆VGS(th)
∆TJ
RDS(on)
mV/°C
VGS = 4.5 V,
ID = 600 mA
ID = 500 mA
ID = 150 mA
0.24
0.36
0.70
0.35
0.30
0.50
1.20
1.00
Ω
V
V
V
GS = 2.5 V,
GS = 1.8 V,
GS = 4.5 V, ID=600mA, TJ = 125°C
gFS
Forward Transconductance
VDS = 5 V,
ID = 600 mA
1.8
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
60
20
10
pF
pF
pF
V
DS = 10 V,
VGS = 0 V,
Output Capacitance
f = 1.0 MHz
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
6
8
12
16
ns
ns
VDD = 10 V,
ID = 1 A,
RGEN = 6 Ω
VGS = 4.5 V,
8
16
ns
2.4
0.8
0.16
0.26
4.8
1.1
ns
Qg
Qgs
Qgd
nC
nC
nC
VDS = 10 V,
VGS = 4.5 V
ID = 600 mA,
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain to Source Diode Forward Current
600
mA
ISM
Maximum Continuous Drain to Source Diode Forward Current - Pusled
1000
mA
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 150 mA (Note 2)
0.7
1.2
V
trr
Qrr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
IF = 600 mA,
dIF/dt = 100 A/µs
8
1
nS
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
200°C/W when
b) 280°C/W when mounted on a
minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper
mounted on a 1in2 pad
of 2 oz copper
2. Pulse Test: Pulse Width < 300µs,
Duty Cycle < 2.0%
3. The diode connected between the gate
and source serves only as protection
againts ESD. No gate overvoltage
rating is implied.
FDY302NZ Rev B
www.fairchildsemi.com
Typical Characteristics
1
2.6
2.4
2.2
2
VGS = 4.5V
3.5V
3.0V
2.5V
VGS = 2.0V
0.8
0.6
0.4
0.2
0
2.0V
1.8
1.6
1.4
1.2
1
2.5V
3.0V
3.5V
4.5V
0.8
0
0.2
0.4
0.6
0.8
1
0
0.25
0.5
0.75
1
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.9
1.6
1.4
1.2
1
ID = 600mA
ID = 300mA
V
GS = 4.5V
0.8
0.7
0.6
0.5
0.4
0.3
0.2
TA = 125oC
0.8
0.6
TA = 25oC
-50
-25
0
25
50
75
100
125
150
1
2
3
4
5
TJ, JUNCTION TEMPERATURE (oC)
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
1
1.5
25oC
VGS = 0V
VDS = 5V
TA = -55oC
1.2
0.9
0.6
0.3
0
0.1
125oC
TA = 125oC
0.01
25oC
-55oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
0.5
1
1.5
2
2.5
3
V
SD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDY302NZ Rev B
www.fairchildsemi.com
Typical Characteristics
5
100
90
80
70
60
50
40
30
20
10
0
f = 1MHz
VGS = 0 V
ID = 600mA
4
Ciss
VDS = 5V
10V
3
2
1
0
15V
Coss
Crss
0
0.2
0.4
0.6
0.8
1
0
4
8
12
16
20
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
30
25
20
15
10
5
10
SINGLE PULSE
RθJA = 280°C/W
T
A = 25°C
1ms
RDS(ON) LIMIT
1
0.1
10ms
100ms
10s
1s
DC
VGS = 4.5V
SINGLE PULSE
RθJA = 280oC/W
TA = 25oC
0
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
t1, TIME (sec)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA =280 °C/W
0.2
P(pk)
0.1
0.1
0.05
t1
t2
0.02
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDY302NZ Rev B
www.fairchildsemi.com
Dimensional Outline and Pad Layout
1.70
1.50
0.35
0.25
0.50
0.50
3
1.70
1.50
0.98
0.78
1.14
1.80
1
2
(0.15)
0.50
0.66
0.50
1.00
LAND PATTERN RECOMMENDATION
0.78
0.20
0.58
SEE DETAIL A
0.04
0.43
0.54
0.34
0.28
DETAIL A
0.10
0.00
SCALE 2 : 1
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS PACKAGE CONFORMS TO EIAJ
SC89 PACKAGING STANDARD.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSIONS.
FDY302NZ Rev B
www.fairchildsemi.com
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
AX-CAP *
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
F-PFS™
FRFET
Sync-Lock™
®*
®
®
®
tm
®
Global Power ResourceSM
GreenBridge™
Green FPS™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyBoost
TinyBuck
®
®
Green FPS™ e-Series™
Gmax™
GTO™
TinyCalc™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
Current Transfer Logic™
IntelliMAX™
®
DEUXPEED
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Dual Cool™
®
EcoSPARK
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
EfficentMax™
ESBC™
®
TRUECURRENT *
μSerDes™
SMART START™
®
Solutions for Your Success™
®
®
SPM
Fairchild
®
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
Fairchild Semiconductor
FACT Quiet Series™
®
®
UHC
®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
®
mWSaver
OptoHiT™
OPTOLOGIC
OPTOPLANAR
FACT
FAST
®
®
FastvCore™
FETBench™
FPS™
®
®
SupreMOS
SyncFET™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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As used here in:
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Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
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First Production
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make changes at any time without notice to improve the design.
No Identification Needed
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Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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