FDZ193P [ONSEMI]
P 沟道，1.7V PowerTrench® WL-CSP MOSFET，-20V，-1A，90mΩ;
| 型号： | FDZ193P |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，1.7V PowerTrench® WL-CSP MOSFET，-20V，-1A，90mΩ 开关 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：424K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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December 2014
FDZ193P
P-Channel 1.7V PowerTrench® WL-CSP MOSFETꢀ
-20V, -1A, 90m:
Features
General Description
Designed on Fairchild's advanced 1.7V PowerTrench® process
with state of the art "low pitch" WLCSP packaging process, the
FDZ193P minimizes both PCB space and rDS(on). This advanced
WLCSP MOSFET embodies a breakthrough in packaging
technology which enables the device to combine excellent
thermal transfer characteristics, ultra-low profile packaging, low
Max rDS(on) = 90m: at VGS = -4.5V, ID = -1A
Max rDS(on) = 130m: at VGS = -2.5V, ID = -1A
Max rDS(on) = 300m: at VGS = -1.7V, ID = -1A
Occupies only 1.5 mm2 of PCB area Less than 50% of the
area of 2 x 2 BGA
gate charge, and low rDS(on)
.
Ultra-thin package: less than 0.65 mm height when mounted
to PCB
Application
Battery management
RoHS Compliant
Load switch
Battery protection
PIN 1
S
D
S
G
S
S
D
G
D
BOTTOM
TOP
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
Parameter
Ratings
-20
12
-3
-15
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
(Note 1a)
A
Power Dissipation
Power Dissipation
(Note 1a)
(Note 1b)
1.9
0.9
PD
W
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RTJA
RTJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
65
°C/W
133
Package Marking and Ordering Information
Device Marking
Device
FDZ193P
Package
WL-CSP
Reel Size
7’’
Tape Width
Quantity
5000 units
2
8mm
1
©2009 Fairchild Semiconductor Corporation
FDZ193P Rev.C4 (W)
www.fairchildsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250PA, VGS = 0V
-20
V
'BVDSS
ꢀꢀꢀ'TJ
Breakdown Voltage Temperature
Coefficient
ID = -250PA, referenced to 25°C
-11
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = -16V, VGS = 0V
-1
100
PA
nA
VGS
=
12V, VGS = 0V
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250PA
D = -250PA, referenced to 25°C
VGS = -4.5V, ID = -1A
GS = -2.5V, ID = -1A
-0.6
-10
-0.9
3
-1.5
V
ꢀ'VGS(th)
ꢀꢀꢀ'TJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
mV/°C
66
92
195
84
90
V
130
300
123
rDS(on)
Drain to Source On Resistance
m:
VGS = -1.7V, ID = -1A
VGS = -4.5V, ID = -1A TJ = 125°C
VGS = -4.5V, VDS = -5V
VDS = -5V, ID = -1A
ID(on)
gFS
On to State Drain Current
Forward Transconductance
A
S
5.6
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
660
150
90
pF
pF
pF
:
VDS = -10V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1MHz
9.5
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
13
10
28
21
7
23
20
45
34
10
ns
ns
ns
VDD = -10V, ID = -1A
VGS = -4.5V, RGEN = 6:
ns
Qg(TOT)
Qgs
Qgd
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VGS = 0V to 10V
nC
nC
nC
VDD = -10V
D = -1A
I
1
2
Drain-Source Diode Characteristics
IS
Maximum continuous Drain-Source Diode Forward Current
-1.1
-1.2
A
V
ns
nC
VSD
trr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, IS = -1.1A (Note 2)
-0.7
19
6
IF = -1A, di/dt = 100A/Ps
Qrr
Reverse Recovery Charge
Notes:
1:
R
TJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board
side of the solder ball, RTJB is defined for reference. For RTJC the thermal reference point for the case is defined as the top surface of the copper chip carrier. RTJC and RTJB
are guaranteed by design while RTJA is determined by the user's board design.
b. 133°C/W when mounted on a
minimum pad of 2 oz copper
a. 65°C/W when mounted on
a 1 in2 pad of 2 oz copper,1.5”
X 1.5” X 0.062” thick PCB
2: Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.
www.fairchildsemi.com
2
FDZ193P Rev.C4 (W)
Typical Characteristics TJ = 25°C unless otherwise noted
16
2.0
1.8
1.6
1.4
1.2
1.0
0.8
V
= -4.5V
PULSE DURATION = 300Ps
GS
PULSE DURATION = 300Ps
14
12
10
8
DUTY CYCLE = 2.0%MAX
DUTY CYCLE = 2.0%MAX
VGS = -2V
V
V
= -3V
GS
VGS = -2.5V
V
= -2.5V
GS
= -3.5V
GS
VGS = -3V
6
VGS = -3.5V
VGS = -4.5V
4
V
= -2V
GS
2
V
= -1.7V
3.5
GS
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
4.0
0
2
4
6
8
10
12
14
16
5.0
1.2
-V , DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT(A)
DS
Figure 1. On Region Characteristics
Figure2. NormalizedOn-Resistance
vs Drain Current and Gate Voltage
1.4
240
200
160
120
80
ID = -1A
VGS = -4.5V
PULSE DURATION = 300Ps
DUTY CYCLE = 2.0%MAX
I
= -1A
D
1.3
1.2
1.1
1.0
0.9
0.8
T
= 125oC
J
T
J
= 25oC
40
-50 -25
0
25
50
75
100 125 150
1.5
2.0
2.5
3.0
3.5
4.0
4.5
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
16
10
1
V
= 0V
PULSE DURATION = 300Ps
DUTY CYCLE = 2.0%MAX
GS
14
12
10
8
V
DD
= -5V
T
J
= 125oC
0.1
T
J
= 25oC
0.01
1E-3
1E-4
T
J
= 125oC
6
T
J
= 25oC
4
T
= -55oC
J
2
T
J
= -55oC
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.2
0.4
0.6
0.8
1.0
-VGS, GATE TO SOURCE VOLTAGE (V)
V
, BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5. Transfer Characteristics
Figure6. SourcetoDrain Diode
Forward Voltage vs Source Current
www.fairchildsemi.com
3
FDZ193P Rev.C4 (W)
Typical Characteristics TJ = 25°C unless otherwise noted
5
2000
1000
I
D
= -1A
4
3
2
1
0
C
iss
V
DD
= -5V
V
= -10V
DD
C
oss
V
= -15V
DD
f = 1MHz
= 0V
100
50
C
rss
V
GS
0.1
1
10
20
0
2
4
6
8
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE(nC)
g
Figure 7. Gate Charge Characteristics
Figure8. CapacitancevsDrain
to Source Voltage
3.5
3.0
30
10
V
= -4.5V
= -2.5V
GS
100us
1ms
2.5
2.0
1.5
1.0
0.5
0.0
1
0.1
10ms
OPERATION IN THIS
AREA MAY BE
V
LIMITED BY rDS(on)
100ms
1s
10s
DC
GS
SINGLE PULSE
T
= MAX RATED
J
RTJA = 133oC/W
R
TJA
= 65oC/W
T
= 25OC
A
0.01
25
50
75
100
125
150
80
0.1
1
10
TA, CASE TEMPERATURE (oC)
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Maximum Continuous Drain
Current vs Ambient Temperature
Figure 10. Forward Bias Safe
Operating Area
50
VGS = 10V
FOR TEMPERATURES
o
ABOVE 25 C DERATE PEAK
10
CURRENT AS FOLLOWS:
150 – T
A
I = I
-----------------------
25
125
o
T
= 25 C
A
1
SINGLE PULSE
0.5
10-3
10-2
10-1
100
t, PULSE WIDTH (s)
101
102
103
Figure 11. Single Pulse Maximum Power Dissipation
www.fairchildsemi.com
4
FDZ193P Rev.C4 (W)
Typical Characteristics TJ = 25°C unless otherwise noted
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
PDM
0.05
0.02
0.1
0.01
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZTJA x RTJA + TA
SINGLE PULSE
0.01
10-3
10-2
10-1
100
101
102
103
t, RECTANGULAR PULSE DURATION (s)
Figure 12. Transient Thermal Response Curve
www.fairchildsemi.com
5
FDZ193P Rev.C4 (W)
Dimensional Outline and Pad Layout
Pin Definations:
Gate
A1
Drain
Source
C1, C2
A2, B1, B2
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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FDZ193P Rev.C4 (W)
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Build it Now
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Quiet Series
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®
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®
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The datasheet is for re
ference information only.
Rev. I73
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7
FDZ193P Rev.C4 (W)
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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相关型号：
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FAIRCHILD
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