FDZ661PZ [ONSEMI]

P 沟道，1.5 V 指定，PowerTrench® 薄款 WL-CSP MOSFET，-20V，-2.6A，140mΩ;


型号：	FDZ661PZ
厂家：	ONSEMI
描述：	P 沟道，1.5 V 指定，PowerTrench® 薄款 WL-CSP MOSFET，-20V，-2.6A，140mΩ
文件：	总9页 (文件大小：375K)
中文：	中文翻译
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December 2011

FDZ661PZ

P-Channel 1.5 V Specified PowerTrench^®Thin WL-CSP MOSFET

-20 V, -2.6 A, 140 mΩ

Features

General Description

Designed on Fairchild's advanced 1.5 V PowerTrench^®process

with state of the art "fine pitch" Thin WLCSP packaging process,

the FDZ661PZ minimizes both PCB space and r_DS(on). This

advanced WLCSP MOSFET embodies a breakthrough in

packaging technology which enables the device to combine

excellent thermal transfer characteristics, ultra-low profile (0.4

mm) and small (0.8x0.8 mm²) packaging, low gate charge, and

Max r_DS(on)= 140 mΩ at V_GS= -4.5 V, I_D= -2 A

Max r_DS(on)= 182 mΩ at V_GS= -2.5 V, I_D= -1.5 A

Max r_DS(on)= 231 mΩ at V_GS= -1.8 V, I_D= -1 A

Max r_DS(on)= 315 mΩ at V_GS= -1.5 V, I_D= -1 A

Occupies only 0.64 mm²of PCB area. Less than 16% of the

area of 2 x 2 BGA

low r_DS(on)

Ultra-thin package: less than 0.4 mm height when mounted

to PCB

Applications

Battery management

Load switch

HBM ESD protection level > 2 kV (Note3)

RoHS Compliant

Battery protection

Pin 1

TOP

BOTTOM

WL-CSP 0.8X0.8 Thin

MOSFET Maximum Ratings T_A= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

-20

Units

Drain to Source Voltage

Gate to Source Voltage

±8

-Continuous

-Pulsed

Power Dissipation

T_A= 25 °C

(Note 1a)

-2.6

I_D

-10

T_A= 25 °C

(Note 1a)

(Note 1b)

1.3

P_D

0.4

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJA

Thermal Resistance, Junction to Ambient

(Note 1a)

(Note 1b)

°C/W

311

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

7 ”

Tape Width

8 mm

Quantity

FDZ661PZ

WL-CSP 0.8X0.8 Thin

5000 units

FDZ661PZ Rev.C

www.fairchildsemi.com

Electrical Characteristics T_J= 25 °C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BV_DSS

Drain to Source Breakdown Voltage

I_D= -250 μA, V_GS= 0 V

-20

ΔBV_DSS

ΔT_J

Breakdown Voltage Temperature

Coefficient

_D= -250 μA, referenced to 25 °C

-13

mV/°C

I_DSS

I_GSS

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

V_DS= -16 V, V_GS= 0 V

V_GS= ±8 V, V_DS= 0 V

-1

μA

±6

On Characteristics

V_GS(th)

Gate to Source Threshold Voltage

V_GS= V_DS, I_D= -250 μA

-0.3

-0.7

2.5

-1.2

ΔV_GS(th)

ΔT_J

Gate to Source Threshold Voltage

Temperature Coefficient

_D= -250 μA, referenced to 25 °C

V_GS= -4.5 V, I_D= -2 A

_GS= -2.5 V, I_D= -1.5 A

mV/°C

108

129

159

201

143

7.8

140

182

231

315

204

r_DS(on)

Static Drain to Source On Resistance

Forward Transconductance

V_GS= -1.8 V, I_D= -1 A

mΩ

V_GS= -1.5 V, I_D= -1 A

V_GS= -4.5 V, I_D= -2 A, T_J=125°C

V_DD= -5 V, I_D= -2 A

g_FS

Dynamic Characteristics

C_iss

C_oss

C_rss

Input Capacitance

416

555

V_DS= -10 V, V_GS= 0 V,

f = 1 MHz

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Rise Time

4.9

6.3

V_DD= -10 V, I_D= -2.5 A,

_GS= -4.5 V, R_GEN= 6 Ω

Turn-Off Delay Time

Fall Time

108

Q_g

Total Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

6.3

0.6

1.7

8.8

V_GS= -4.5 V, V_DD= -10 V,

_D= -2.5 A

Q_gs

Q_gd

Drain-Source Diode Characteristics

V_SD

t_rr

Source to Drain Diode Forward Voltage

Reverse Recovery Time

V_GS= 0 V, I_S= -1.4 A

(Note 2)

-0.9

-1.2

I_F= -2.5 A, di/dt = 100 A/μs

Q_rr

Reverse Recovery Charge

Notes:

1. R

is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

is guaranteed by design while R is determined by

θCA

θJA

θJC

the user's board design.

a. 93 °C/W when mounted on

a 1 in pad of 2 oz copper.

b. 311 °C/W when mounted on a

minimum pad of 2 oz copper.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.

www.fairchildsemi.com

FDZ661PZ Rev.C

Typical Characteristics T_J= 25 °C unless otherwise noted

= -4.5 V

= -3 V

= -2.5 V

V_GS= -1.5 V

V_GS= -1.8 V

V_GS= -2.5 V

= -1.8 V

V_GS= -3 V

V_GS= -4.5 V

= -1.5 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

-I_D, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics

Figure2. Normalized On-Resistance vs

Drain Current and Gate Voltage

1.6

1.4

1.2

1.0

0.8

0.6

600

= -2 A

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

I_D= -2 A

= -4.5 V

450

300

150

T_J= 125 ^o

T_J= 25 ^o

-75 -50 -25

25 50 75 100 125 150

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

T , JUNCTION TEMPERATURE (^oC)

-V_GS, GATE TO SOURCE VOLTAGE (V)

F i gu re 3 . N orma li zed On - Res is ta nc e

vs Junction Temperature

Figure4. On-Resistance vs Gate to

Source Voltage

V_GS= 0 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

V_DS= -5 V

T_J= 150 ^o

T_J= 25 ^o

0.1

0.01

T_J= 150 ^oC

T_J= 25 ^o

T_J= -55 ^o

0.001

0.5

1.0

1.5

2.0

2.5

0.2

0.4

0.6

0.8

1.0

1.2

-V_GS, GATE TO SOURCE VOLTAGE (V)

-V_SD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure6. Source to Drain Diode

Forward Voltage vs Source Current

www.fairchildsemi.com

FDZ661PZ Rev.C

Typical Characteristics T_J= 25 °C unless otherwise noted

4.5

2000

1000

= -2.5 A

= -8 V

C_iss

3.0

1.5

= -10 V

C_oss

100

= -12 V

C_rss

f = 1 MHz

= 0 V

0.1

Q , GATE CHARGE (nC)

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics

Figure8. C a p a c i t a n c e v s D r a i n

to Source Voltage

10^-1

10^-2

10^-3

10^-4

10^-5

10^-6

10^-7

10^-8

10^-9

10^-10

V_DS= 0 V

100 us

1 ms

0.1

T_J= 125 ^o

10 ms

THIS AREA IS

LIMITED BY r_DS(on)

100 ms

1 s

10 s

SINGLE PULSE

= MAX RATED

T_J= 25 ^o

0.01

0.001

= 311 C/W

θJA

= 25 C

0.1

100

- V_GS, GATE TO SOURCE VOLTAGE (V)

-V_DS, DRAIN to SOURCE VOLTAGE (V)

Figure9. Gate Leakage Current

v s G a t e t o S o u r c e V o l t a g e

Figure 10. Forward Bias Safe

Operating Area

1000

100

SINGLE PULSE

R_θJA= 311 ^oC/W

_A= 25^oC

0.1

10^-4

10^-3

10^-2

10^-1

t, PULSE WIDTH (sec)

100

1000

Figure 11. Single Pulse Maximum Power Dissipation

www.fairchildsemi.com

FDZ661PZ Rev.C

Typical Characteristics T_J= 25 °C unless otherwise noted

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

0.02

0.01

0.1

0.01

NOTES:

DUTY FACTOR: D = t /t

SINGLE PULSE

R_θJA= 311 ^oC/W

PEAK T = P

x Z

x R

+ T

θJA

θJA A

0.001

10^-4

10^-3

10^-2

10^-1

t, RECTANGULAR PULSE DURATION (sec)

100

1000

Figure 12. Junction-to-Ambient Transient Thermal Response Curve

www.fairchildsemi.com

FDZ661PZ Rev.C

Dimensional Outline and Pad Layout

www.fairchildsemi.com

FDZ661PZ Rev.C

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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not

intended to be an exhaustive list of all such trademarks.

2Cool™

FPS™

The Power Franchise

AccuPower™

Auto-SPM™

AX-CAP™*

F-PFS™

FRFET

Global Power Resource

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PowerTrench

PowerXS™

Programmable Active Droop™

QFET

QS™

Quiet Series™

RapidConfigure™

™

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TinyBuck™

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BitSiC

Build it Now™

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Gmax™

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IntelliMAX™

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TinyLogic

TINYOPTO™

TinyPower™

TinyPWM™

TinyWire™

Current Transfer Logic™

DEUXPEED

Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time™

TranSiC

Dual Cool™

EcoSPARK

and Better™

MegaBuck™

SignalWise™

SmartMax™

SMART START™

Solutions for Your Success™

SPM

STEALTH™

SuperFET

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

TriFault Detect™

TRUECURRENT *

EfficentMax™

ESBC™

MICROCOUPLER™

MicroFET™

μSerDes™

MicroPak™

MicroPak2™

MillerDrive™

MotionMax™

Motion-SPM™

mWSaver™

UHC

Fairchild

Ultra FRFET™

UniFET™

VCX™

VisualMax™

VoltagePlus™

XS™

Fairchild Semiconductor

FACT Quiet Series™

FACT

OptoHiT™

OPTOLOGIC

SupreMOS

FAST

SyncFET™

Sync-Lock™

®*

FastvCore™

FETBench™

FlashWriter

OPTOPLANAR

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.

Advance Information

Formative / In Design

Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without

notice to improve design.

Preliminary

First Production

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the design.

No Identification Needed

Obsolete

Full Production

Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.

Not In Production

Rev. I60

FDZ661PZ Rev.C

www.fairchildsemi.com

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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FDZ661PZ [ONSEMI]

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