FFA60UP20DNTU [ONSEMI]
60A,200V,Ultrafast 双二极管;型号: | FFA60UP20DNTU |
厂家: | ONSEMI |
描述: | 60A,200V,Ultrafast 双二极管 超快软恢复二极管 快速软恢复二极管 局域网 |
文件: | 总5页 (文件大小:269K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.cn
ᡕꢀꢁꢂꢃꢄ
60 A, 200 V
3
1
2
FFA60UP20DN
1.Anode 2. Cathode 3. Anode
ᛄꢅ
FFA60UP20DNꢀꢁꢂꢃꢄꢅꢆꢇꢀꢈꢉꢊꢀUISꢀꢁꢋꢌꢂꢍꢃꢎ
ꢏꢄ。ꢅꢐꢑꢒꢓꢔꢕꢖꢗꢘꢙꢚꢛꢗꢘꢕꢖꢜꢝꢞꢝꢟꢆꢠ
ꢈꢡꢢꢎꢏꢄ。ꢣꢤꢇꢥꢝꢦꢕꢖꢗꢘꢧꢨꢩꢐꢈꢀUPSꢀꢪꢫꢬ
ꢜꢝ。
1
ꢆꢇ
2
3
•ꢭꢂꢍꢃꢮꢯ, T = 32 ns (@ I = 30 A)
•ꢭꢰꢱꢅꢆꢗꢇ, V = 1.15 V (@ T = 25°C)
•ꢭꢲꢆꢗꢇ:V
•ꢭꢈꢳꢁꢉꢊꢴꢵ
•ꢭꢶꢥ RoHS ꢷꢸ
rr
F
1.Anode 2.Cathode 3.Anode
F
C
TO−3P−3LD / EIAJ SC−65, ISOLATED
= 200 V
RRM
CASE 340BZ
MARKING DIAGRAM
ꢈꢉ
•ꢭꢹꢺꢕꢖꢗꢋ
•ꢭꢌꢻꢼꢠꢐ
•ꢭꢆꢠꢎꢏꢄ
•ꢭSMPS
$Y&Z&3&K
F60UP20DN
•ꢭꢨꢩꢐ
•ꢭUPS
ꢊꢋꢌꢍ⍭ꢎꢏ
(ꢀꢀꢁꢁꢂ) T = 25°C ꢃꢄꢂꢅꢆꢇ
C
ꢐꢑ
ꢃꢄꢈꢉꢊꢂꢋꢌꢁꢍꢅ
ꢎꢆꢇꢈꢉꢊꢏꢋ
ꢇꢈꢉꢊꢌꢍꢏꢋ
ꢎꢏꢐꢈꢑꢒꢏꢒ
ꢒꢓ
⍭ꢎꢏ
200
200
200
30
ꢔꢕ
V
$Y = Logo
&Z = Assembly Plant Code
&3 = Date Code
&K = Lot Run Traceability Code
F60UP20DN = Specific Device Code
V
R
V
V
RRM
RWM
F(AV)
V
V
I
A
(@ T = 100°C)
C
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
ꢄꢎꢆꢓꢔꢉꢊꢏꢒ
60 Hz ꢐꢑꢒꢐꢓꢕ
I
300
A
FSM
ꢌꢍꢖꢗꢔꢕꢖꢗꢗ
T , T
−65 ꢘ +175
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
(ꢘꢙꢚꢛ)
ꢙꢜꢏꢋꢝꢞꢟꢚꢠꢛꢊꢡꢜꢝꢞꢋꢊꢢꢟ,ꢠꢡꢢꢣꢣꢤꢤ。ꢙꢜꢝꢞÛĵ
ꢥ{ꢦꢊ,෦ꢧꢨƽꢩꢠꢡѿꢣ,ꢢꢣꢣොꢪꢠꢡꢤꢤ,ꢫ
ڭ
ꢢꢬꢭ。 ꢖꢇꢗ
ꢐꢑ
ꢒꢓ
⍭ꢎꢏ
ꢔꢕ
ꢖꢮ - ijꢋꢟꢚꢯꢰ
R
1.4
_C/W
q
JC
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
November, 2021 − Rev. 2
FFA60UP20DNCN/D
FFA60UP20DN
ꢘꢙꢆꢇ
(ꢀꢀꢁꢁꢂ) T = 25°C ꢃꢄꢂꢅꢆꢇ
C
ꢒꢓ
V (Note 1)
ꢐꢑ
ꢟꢚꢱꢲꢐꢈꢏꢋ
ꢔꢕ
ꢌꢚꢏ ꢛꢜꢏ ꢌꢍꢏ
ꢔꢕ
I = 30 A, T = 25°C
I = 30 A, T = 100°C
−
−
−
−
1.15
1.0
V
F
F
F
C
C
I
R
(Note 1)
ꢟꢚꢱꢲꢇꢈꢏꢒ
V
R
V
R
= 200 V, T = 25°C
−
−
−
−
10
100
mA
C
= 200 V, T = 100°C
C
t
I
ꢇꢈꢳꢆꢲꢴ
ꢇꢈꢳꢆꢏꢒ
ꢇꢈꢳꢆꢏꢵ
ꢟꢚꢇꢈꢳꢆꢲꢴ
ꢶ༉ꢣꢷ
I = 30 A, di /dt = 200 A/ms, V = 130 V
−
−
−
−
2
32
2.4
38.4
−
−
−
ns
A
rr
F
F
R
rr
Q
−
nC
ns
mJ
rr
t
rr
I = 1 A, di /dt = 100 A/ms
40
−
F
F
W
AVL
L = 40 mH
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
(ꢘꢙꢚꢛ)
ꢃꢄꢂꢅꢆꢇ,“ꢏꢸꢹꢭ”ꢡꢺꢜꢝꢞꢋꢻꢼꢝꢽꢾꢿꢡ⛻ꢋ
ڡ
ꢭꢣꢘꣀ。ꢙꢜई⛽
ꢿꢡ⛻ꣁꣂ,ڡ
ꢭꢣꢢꢣ⛾“ꢏꢸꢹꢭ”ꢡꢺ ꢜꢼꢝꢭꢣꢘꣀ⛽⛰ꢪ。
1. ꣃΒꢽꢾ: ꣃΒඝꢗ = 300 ms, Հ꣄ꣅ = 2%
ꢝꢞꢘᢿꢟꢠꢡ
V
GE
Amplitude and
R
Control dI /dt
G
F
L
t and t Control I
1
2
F
t
rr
Current
Sense
DUT
dI
dt
F
I
F
R
G
t
a
t
b
+
0
V
V
GE
DD
−
IGBT
t
1
0.25 I
RM
t
2
I
RM
ࣞ
1. ꢂꢃꢄ֭ױ
ቂ૭ꢝꢞꢘᢿꢟꢠꢡ L = 40 mH
R < 0.1 W
V
DD
= 50 V
EAVL = 1/2LI2 [V
Q1 = IGBT (BV
/(V
> DUT V
− V )]
)
R(AVL)
R(AVL)
R(ALV) DD
V
AVL
CES
L
R
+
V
Current
Sense
I
L
I
L
DD
Q1
I V
V
DD
−
DUT
t
0
t
1
t
2
t
ࣞ
2. ∮٭
ꢕዿꢇრ͓ꢝꢞꢘᢿꢟꢠꢡ ᎕᧧ᚖꢟꢎǁ
ࡈ
Ö০ꢓ ᵃ∲᧧ꢢ
᎕
Shipping
30 Units / Tube
FFA60UP20DNTU
F60UP20DN
TO−3P−3LD (Pb−Free)
www.onsemi.cn
2
FFA60UP20DN
ꢛꢜꢆꢇ
10
1
100
10
T
= 100°C
= 25°C
C
T
C
= 100°C
0.1
T
C
T
C
= 25°C
1
0.01
0.1
0.0
0.001
2.0
0.5
1.0
1.5
0
50
100
150
200
V , Forward Voltage (V)
F
V , Reverse Voltage (V)
R
ࣞ
3. ꢛꢜᵃױ
ꢘիℝꢟᵃױ
ꢘἡŔ͓ߋ
ࣞ
4. ꢛꢜ֭ױ
ꢘἡꢟ֭ױ
ꢘիŔ͓ߋ
500
400
40
Typical Capacitance
at 0 V = 473.9 pF
I = 30 A
F
T
C
= 25°C
35
200
30
25
0.1
1
10
100
100
150
200
250 300 350 400450500
V , Reverse Voltage (V)
R
di /dt (A/ms)
F
ࣞ
5. ꢛꢜণꢘ ࣞ
6. ꢛꢜ֭ױ
ቂ૭៖ꢟdiF/dt Ŕ͓ߋ
35
6
5
4
I = 30 A
F
30
25
T
C
= 25°C
DC
20
15
3
2
10
5
1
0
0
100
150
200
250 300 350 400450500
60
80
100
120
140
160
di /dt (A/ms)
T , Case Temperature (5C)
F
C
ࣞ
7. ꢛꢜ֭ױ
ቂ૭ꢘἡꢟdiF/dt Ŕ͓ߋ
ࣞ
8. ᵃױ
ꢘἡℝ⍭ꢣꢤ www.onsemi.cn
3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−3P−3LD / EIAJ SC−65, ISOLATED
CASE 340BZ
ISSUE O
DATE 31 OCT 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13862G
TO−3P−3LD / EIAJ SC−65, ISOLATED
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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