FFB20UP20STM [ONSEMI]
20 A、200 V 超快速二极管;
| 型号： | FFB20UP20STM |
| 厂家： | 
ONSEMI |
| 描述： | 20 A、200 V 超快速二极管 超快软恢复二极管 快速软恢复二极管 超快速软恢复能力电源 |
| 文件： | 总4页 (文件大小：134K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Ultrafast Diode
200 V, 20 A
2
1
3
FFB20UP20S
2
D PAK
3−LEAD
CASE 418AJ
Description
The FFB20UP20S is an ultrafast diode with low forward voltage
drop and rugged UIS capability. This device is intended for use as
freewheeling and clamping diodes in a variety of switching power
supplies and other power switching applications. It is specially suited
for use in switching power supplies and industrial applications as
welder application.
1. Anode
2. Cathode
3. Anode
Features
• Ultrafast Recovery, t = 45 ns (@ I = 20 A)
rr
F
MARKING DIAGRAM
• Max Forward Voltage, V = 1.15 V (@ T = 25°C)
F
C
• Reverse Voltage, V
= 200 V
RRM
• Avalanche Energy Rated
• RoHS Compliant
F20UP20SG
AYWW
Applications
• Output Rectifiers
• SMPS, Welder, UPS
F20UP20S = Specific Device Code
• Free−Wheeling Diode for Motor Application
• Power Switching Circuits
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
ABSOLUTE MAXIMUM RATINGS
T
C
= 25°C unless otherwise noted
Symbol
Parameter
Rating
200
Unit
V
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RRM
RWM
V
200
V
V
R
200
V
I
Average Rectified Forward Current
20
A
F(AV)
@ T = 115°C
C
I
Non−repetitive Peak Surge Current
60 Hz Single Half−Sine Wave
200
A
FSM
T , T
STG
Operating Junction and Storage
Temperature Range
−65 to
+175
°C
J
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
FFB20UP20S/D
February, 2022 − Rev. 3
FFB20UP20S
THERMAL CHARACTERISTICS T = 25°C unless otherwise noted
C
Symbol
Parameter
Maximum Thermal Resistance, Junction−to−Case
Max
Unit
R
2.0
°C/W
θ
JC
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Packing Method
Reel Size
13″ Dia
Tape Width
Quantity
800
2
FFB20UP20STM
F20UP20S
D PAK
Reel
N/A
ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
C
Parameter
Conditions
Min
Typ
Max
Unit
V
Forward Voltage
V
F
(Note 1)
I = 20 A
T
C
T
C
= 25°C
= 100°C
−
−
−
−
1.15
1.0
F
I = 20 A
F
I
Reverse Current
mA
R
(Note 1)
V
R
V
R
= 200 V
= 200 V
T
C
T
C
= 25°C
= 100°C
−
−
−
−
100
500
t
I = 1 A, di /dt = 100 A/ms, V = 30 V
T
= 25°C
= 25°C
−
−
−
−
35
45
ns
rr
F
F
R
C
I = 20 A, di /dt = 200 A/ms, V = 130 V
F
F
R
t
t
Q
I = 20 A, di /dt = 200 A/ms, V = 130 V
T
C
−
−
−
11
13
21
−
−
−
ns
ns
nC
a
b
rr
F
F
R
W
AVL
Avalanche Energy (L = 40 mH)
20
−
−
mJ
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%
Test Circuit and Waveforms
Figure 1. Diode Reverse Recovery Test Circuit & Waveform
Figure 2. Unclamped Inductive Switching Test Circuit & Waveform
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2
FFB20UP20S
TYPICAL CHARACTERISTICS
100
10
1
10
1
TC = 125oC
TC = 75oC
TC = 125o C
TC = 100oC
0.1
TC = 25oC
TC = 75o
C
TC = 25 o
C
0.01
0.1
0.4
1E−3
0.6
0.8
1.0
1.
2
1.4
1.6
0
50
100
150
200
FORWARD VOLTAGE, V
VOLTAGE, V
[V]
R
F [V]
REVERSE
Figure 3. Typical Forward Voltage Drop
Figure 4. Typical Reverse Current
400
350
300
250
200
150
100
50
52
48
44
40
36
32
28
24
20
= 20A
IF
f = 1MHz
TC = 125oC
TC = 75o
C
TC = 25o
C
0
0.1
1
10
100
100
200
300
400
500
VOLTAGE, V
REVERSE
R [V]
diF/dt [A /μs]
Figure 5. Typical Junction Capacitance
Figure 6. Typical Reverse Recovery Time
30
12
10
8
IF = 20A
25
20
15
10
5
TC = 125oC
DC
6
TC = 75o
C
4
TC = 25o
C
2
0
100
0
100
110
120
130
140
150
200
diF
300
400
500
[o C]
CASE TEMPERATURE, T
/dt [A/μs]
C
Figure 7. Typical Reverse Recovery Current
Figure 8. Forward Current Derating Curve
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3
FFB20UP20S
PACKAGE DIMENSIONS
D2PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
ISSUE F
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