FFB2227A [ONSEMI]
NPN 和 PNP 通用放大器;型号: | FFB2227A |
厂家: | ONSEMI |
描述: | NPN 和 PNP 通用放大器 放大器 PC 开关 光电二极管 晶体管 |
文件: | 总7页 (文件大小:358K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FFB2227A / FMB2227A
NPN & PNP General-Purpose Amplifier
Description
This complementary device is a medium-power amplifier
and switch, requiring collector currents up to 500 mA.
Sourced from Process 19 and 63. See FFB2222A (NPN)
and FFB2907A (PNP) for characteristics.
Ordering Information
Part Number
FFB2227A
Top Mark
AA
Package
SC70 6L
SSOT 6L
Packing Method
Tape and Reel
FMB2227A
001
Tape and Reel
Block Diagram
C2
E2
E1
B2
C1
C1
SuperSOTTM-6
B2
SC70-6
C2
Mark: .001
B1
E2
Dot denotes pin#1
Mark: .AA
Dot denotes pin#1
E1
Pin#1
pin#1
B1
FFB2227A Device Package
FMB2227A Device Package
C1
B2
E2
C1
E1
C2
TRANSISTOR TYPE
C1 B1 E1
C2 B2 E2
NPN
PNP
E1
B1
C2
B1
E2
B2
FMB2227A Internal Connection
FFB2227A Internal Connection
Figure 1. Block Diagram
© 1998 Semiconductor Components Industries, LLC.
Publication Order Number:
FFB2227A/D
November-2017, Rev. 2
1
Absolute Maximum Ratings(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCEO
VCBO
VEBO
Parameter
Value
Units
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
30
60
V
5
V
IC
Collector Current - Continuous
500
mA
°C
TJ, TSTG
Operating and Storage Junction Temperature Range
- 55 to +150
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low-
duty cycle operations.
3. All voltages (V) and currents (A) are negative polarity for PNP transistors.
4. These Ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics(2)
Values are at TA = 25°C unless otherwise noted.
Maximum
Symbol
Parameter
Units
FFB2227A FMB2227A
300
2.4
700
5.6
mV
Total Device Dissipation
PD
mV/°C
°C/W
Derate Above 25°C
RθJA
Thermal Resistance, Junction to Ambient
415
180
Note:
2. PCB board size: FR-4 76 x 114 x 0.6T mm3(3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
www.onsemi.com
2
Electrical Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown
Parameter
Test Conditions
Min.
Typ.
Max. Units
V(BR)CEO
IC = 10 mA, IB = 0
30
V
Voltage(4)
Collector-Base Breakdown
Voltage
V(BR)CBO
IC = 10 μA, IE = 0
60
5
V
V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0
ICBO
IEBO
Collector Cut-Off Current
Emitter Cut-Off Current
VCB = 50 V, IE = 0
VEB = 3.0 V, IC = 0
30
30
nA
nA
ON CHARACTERISTICS
IC = 1.0 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 10 V(4)
IC = 300 mA, VCE = 10 V(4)
IC = 150 mA, IB = 15 mA
IC = 300 mA, IB = 30 mA
50
75
hFE
DC Current Gain
100
30
0.4
1.4
V
V
Collector-Emitter Saturation
Voltage(4)
VCE(sat)
VBE(sat)
Base-Emitter Saturation
Voltage(4)
IC = 150 mA, IB = 15 mA
1.3
V
SMALL SIGNAL CHARACTERISTICS
IC = 50 mA, VCE = 20 V,
f = 100 MHz
fT
Current Gain - Bandwidth Product
250
MHz
Cobo
Cibo
Output Capacitance
Input Capacitance
VCB = 10 V, IE = 0, f = 100 kHz
VEB = 2.0 V, IC = 0, f = 100 kHz
4.0
12
pF
pF
IC = 100 μA, VCE = 10 V,
RS = 1.0 kΩ, f = 1.0 kHz
NF
Noise Figure
2.0
dB
SWITCHING CHARACTERISTICS
ton
td
Turn-on Time
Delay Time
Rise Time
30
8.0
20
80
60
20
ns
ns
ns
ns
ns
ns
VCC = 30 V, IC = 150 mA,
IB1 = 15 mA
tr
toff
ts
Turn-off Time
Storage Time
Fall Time
VCC = 6.0 V, IC = 150 mA,
IB1 = IB2 = 15 mA
tf
Notes:
3. All voltages (V) and currents (A) are negative polarity for PNP transistors.
4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
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3
Physical Dimensions
SC70 6L
SYMM
C
L
0.20
A
2.00
0.65
0.50 MIN
6
4
3
B
PIN ONE
0.10
1.25
1.90
1
0.30
0.15
(0.25)
0.40 MIN
0.10
A B
1.30
0.65
1.30
LAND PATTERN RECOMMENDATION
SEE DETAIL A
1.00
0.80
1.10
0.80
0.10 C
0.10
0.00
C
2.10 0.30
SEATING
PLANE
NOTES: UNLESS OTHERWISE SPECIFIED
GAGE
A) THIS PACKAGE CONFORMS TO EIAJ
SC-88, 1996.
PLANE
(R0.10)
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH.
0.25
0.10
D) DRAWING FILENAME: MKT-MAA06AREV6
0.20
30°
0°
0.46
0.26
SCALE: 60X
Figure 2. 6-LEAD, SC70, EIAJ SC-88, 1.25 MM WIDE (ACTIVE)
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and
conditions, specifically the warranty therein, which covers ON Semiconductor products.
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4
Physical Dimensions (Continued)
SSOT 6L
Figure 3. 6-LEAD, SUPER SOT-6, JEDEC MO-193, 1.6 MM WIDE (ACTIVE)
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and
conditions, specifically the warranty therein, which covers ON Semiconductor products.
www.onsemi.com
5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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