FFH30S60STU [ONSEMI]
整流器，30A，600V，2.6V，TO-247（2 引线）STEALTH II;
| 型号： | FFH30S60STU |
| 厂家： | 
ONSEMI |
| 描述： | 整流器，30A，600V，2.6V，TO-247（2 引线）STEALTH II 软恢复二极管 超快速软恢复二极管 局域网 PC |
| 文件： | 总5页 (文件大小：370K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Stealth II Rectifier
30 A, 600 V
FFH30S60S
Description
The FFH30S60S is stealth2 rectifier with soft recovery
characteristics. It is silicon nitride passivated ion−implanted epitaxial
planar construction.
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This device is intended for use as freewheeling of boost diode in
switching power supplies and other power switching applications.
Their low stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reducing power
loss in the switching transistors.
Features
• High Speed Switching, t < 35 ns @ I = 30 A
rr
F
TO−247
2 LEAD
CASE 340CL
• High Reverse Voltage and High Reliability
• This Device is Pb−Free and is RoHS Compliant
Applications
MARKING DIAGRAM
• General Purpose
• Switching Mode Power Supply
• Boost Diode in Continuous Mode Power Factor Corrections
• Power Switching Circuits
$Y&Z&3&K
F30S60S
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Rating
Symbol
Value
600
600
600
30
Unit
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
RWM
V
V
V
R
V
Average Rectified Forward Current
I
A
F(AV)
$Y
= ON Semiconductor Logo
@ T = 102°C
C
&Z
&3
&K
= Assembly Plant Code
= Numeric Date Code
= Lot Code
Non−Repetitive Peak Surge Current
60 Hz Single Half−Sine Wave
I
300
A
FSM
F30S60S
= Specific Device Code
Operating and Storage Temperature
Range
T , T
−65 to
+175
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Cathode
2. Anode
THERMAL CHARACTERISTICS
Parameter
Symbol
Value
Unit
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Maximum Thermal Resistance, Junction
to Case
R
1.1
°C/W
q
JC
© Semiconductor Components Industries, LLC, 2007
1
Publication Order Number:
February, 2020 − Rev. 5
FFH30S60S/D
FFH30S60S
PACKAGE MARKING AND ORDERING INFORMATION
Device
Device Marking
Package
Reel Size
Tape Width
Quantity
FFH30S60STU
F30S60S
TO−247−2L
N/A
N/A
50 Units
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
FM
(Note 1) I = 30 A
T
C
T
C
= 25°C
= 125°C
−
−
2.1
1.6
2.6
−
V
F
I = 30 A
F
I
(Note 1)
V
R
V
R
= 600 V
= 600 V
T
C
T
C
= 25°C
= 125°C
−
−
−
−
100
500
mA
RM
t
I = 1 A, di/dt = 100 A/ms, V = 30 V
T
C
T
C
= 25°C
= 25°C
−
25.2
30
ns
rr
F
R
t
rr
I
rr
I = 30 A, di/dt = 200 A/ms, V = 390 V
−
−
−
−
26
2.4
0.9
43
−
−
−
−
ns
A
F
R
S factor
Q
nC
rr
t
I
I = 30 A, di/dt = 200 A/ms, V = 390 V
T
C
= 125°C
−
−
−
−
75.1
6.3
−
−
−
−
ns
A
rr
rr
F
R
S factor
0.9
Q
238
nC
mJ
rr
W
AVL
Avalanche Energy (L = 40 mH)
7.2
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%
TEST CIRCUIT AND WAVEFORMS
Figure 1. trr Test Circuit
Figure 2. trr Waveforms and Definitions
Figure 3. Avalanche Energy Test Circuit
Figure 4. Avalanche Current and Voltage Definitions
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2
FFH30S60S
TYPICAL PERFORMANCE CHARACTERISTICS
1000
100
200
100
TC = 125oC
TC = 125oC
TC = 75oC
75oC
10
25oC
10
1
0.1
T
C = 25oC
0.01
1
10
100
200
300
400
500
600
0
1
2
3
4
5
Forward Voltage, VF [V]
Reverse Voltage, VR [V]
Figure 5. Typical Forward Voltage Drop vs. Forward
Current
Figure 6. Typical Reverse Current vs. Reverse Voltage
350
100
Typical Capacitance
at 0V = 271 pF
280
TC = 125oC
80
210
140
70
TC = 75oC
60
TC = 25oC
40
0
20
0.1
1
10
100
100
150
200
di/dt [A/ms]
250
300
Reverse Voltage, VR [V]
Figure 7. Typical Junction Capacitance
Figure 8. Typical Reverse Recovery Time vs. di/dt
10
50
40
30
20
10
0
8
TC = 125oC
6
T
C = 75oC
4
2
0
TC = 25oC
100
150
200
di/dt [A/ms]
250
300
25
50
75 100 125 150 175 200
Case temperature, TC [oC]
Figure 9. Typical Reverse Recovery Current vs. di/dt
Figure 10. Forward Current Derating Curve
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−2LD
CASE 340CL
ISSUE A
DATE 03 DEC 2019
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ
= Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13850G
TO−247−2LD
PAGE 1 OF 1
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