FFPF08S60STTU [ONSEMI]
80A，600V，STEALTH™ II 二极管;
| 型号： | FFPF08S60STTU |
| 厂家： | 
ONSEMI |
| 描述： | 80A，600V，STEALTH™ II 二极管 软恢复二极管 超快速软恢复二极管 局域网 |
| 文件： | 总5页 (文件大小：247K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
8 A, 600 V, STEALTHꢀII
Diode
1
2
FFPF08S60ST
1. Cathode
2. Anode
Description
The FFPF08S60S is STEALTHt II diode with soft recovery
characteristics. It is silicon nitride passivated ion−implanted epitaxial
planar construction.
This device is intended for use as freewheeling of boost diode in
switching power supplies and other power swithching applications.
Their low stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reducing power
loss in the switching transistors.
1
2
TO−220F−2L
CASE 221AS
Features
• Stealth Recovery t = 30 ns (@ I = 8 A)
rr
F
MARKING DIAGRAM
♦ Max Forward Voltage, V = 3.4 V (@ T = 25°C)
F
C
• 600 V Reverse Voltage and High Reliability
• This Device is Pb−Free and are RoHS Compliant
Applications
• General Purpose
$Y&Z&3&K
F08S60ST
• SMPS
• Boost Diode in Continuous Mode Power Factor Corrections
• Power Switching Circuits
ABSOLUTE MAXIMUM RATINGS T = 25°C unless otherwise noted
C
$Y
&Z&3
&K
= onsemi Logo
= Date Code (Year & Week)
= Lot
Symbol
Parameter
Value
Unit
V
RRM
V
RWM
V
R
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
600
600
600
V
V
V
F08S60ST
= Specific Device Code
ORDERING INFORMATION
Average Rectified Forward Current
I
8
A
F(AV)
@ T = 95_C
Device
Package
Shipping
50 / Tube
C
FFPF08S60STTU TO−220F−2L
I
80
A
FSM
Non−repetitive Peak Surge Current
60Hz Single Half−Sine Wave
_C
T , T
STG
Operating Junction and Storage
Temperature
− 65 to +175
J
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
August, 2022 − Rev. 4
FFPF08S60ST/D
FFPF08S60ST
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
R
Maximum Thermal Resistance, Junction−to−Case
3.4
_C/W
q
JC
ELECTRICAL CHARACTERISTICS
Parameter
Conditions
Min.
Typ.
Max
Unit
V
F1
−
−
2.1
1.6
2.6
−
T = 25 _C T = 125 _C
I = 8 A I = 8 A
C
C
V V
F
F
I
R1
mA
mA
−
−
−
−
100
500
T = 25 _C T = 125 _C
V = 600 V V = 600 V
C
C
R
R
I =1 A, di /dt = 100 A/ms, V = 30 V
T = 25 _C
C
t
rr
−
−
25
ns
F
F
R
I =8 A, di /dt = 200 A/ms, V = 390 V
T = 25 _C
C
−
−
−
−
19
2.2
0.6
21
30
−
−
F
F
R
T
ns
A
rr
I
rr
S factor
Q
−
nC
rr
I =8 A, di /dt = 200 A/ms, V = 390 V
T = 125 _C
C
−
−
−
−
58
4.3
1.3
125
−
−
−
−
F
F
R
t
ns
A
rr
I
rr
S factor
nC
mJ
W
AVL
Avalanche Energy (L = 40 mH)
20
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse: Test Pulse width = 300 ms, Duty Cycle = 2%
Test Circuit and Waveforms
Figure 1. Diode Reverse Recovery Test Circuit & Waveform
Figure 2. Unclamped Inductive Switching Test Circuit & Waveform
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2
FFPF08S60ST
TYPICAL PERFORMANCE CHARACTERISTICS
T
C
= 25°C unless otherwise noted
100
10
1
1E−4
1E−5
1E−6
1E−7
1E−8
TC=125oC
TC = 125oC
TC = 75oC
TC = 25oC
TC=25oC
TC=75oC
1E−9
0.1
0.0
0
100
200
300
400
500
600
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
REVERSE VOLTAGE, V[V]
FORWARD VOLTAGE, VF [V]
R
Figure 3. Typical Forward Voltage Drop
Figure 4. Typical Reverse Current
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
IF = 8A
f = 1MHz
TC = 125o C
TC = 75oC
TC = 25oC
1
10
100
1000
100
200
300
400
500
REVERSE VOLTAGE, V [V]
m
diF/dt [A/ s]
R
Figure 6. Typical Reverse Recovery Time
Figure 5. Typical Junction Capacitance
10
9
8
7
6
5
4
3
2
1
0
40
IF=8A
30
TC = 75oC
TC = 125oC
20
10
0
TC = 25oC
100
200
300
400
500
25
50
75
100
125
150
175
o
C]
di /dt [A/ s]
m
F
[
CASE TEMPERATURE, T
C
Figure 8. Forward Current Deration Curve
Figure 7. Typical Reverse Recovery Current
STEALTH is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
www.onsemi.com
3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220 Fullpack, 2−Lead / TO−220F−2FS
CASE 221AS
ISSUE O
DATE 29 FEB 2012
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON67438E
TO−220 FULLPACK, 2−LEAD / TO−220F−2FS
PAGE 1 OF 1
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