FFSB1065A [ONSEMI]

SiC 二极管 - 650V，10A，D2PAK;


型号：	FFSB1065A
厂家：	ONSEMI
描述：	SiC 二极管 - 650V，10A，D2PAK 功效测试光电二极管
文件：	总6页 (文件大小：295K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

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Silicon Carbide (SiC)

Schottky Diode – EliteSiC,

10 A, 650 V, D1, D2PAK-2L

1.,3. Cathode

2. Anode

Schottky Diode

FFSB1065A

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new

technology that provides superior switching performance and higher

reliability compared to Silicon. No reverse recovery current,

temperature independent switching characteristics, and excellent

thermal performance sets Silicon Carbide as the next generation of

power semiconductor. System benefits include highest efficiency,

faster operating frequency, increased power density, reduced EMI, and

reduced system size and cost.

D2PAK−2L (TO−263−2L)

CASE 418BK

MARKING DIAGRAM

Features

AYWWZZ

FFSB

1065A

• Max Junction Temperature 175°C

• Avalanche Rated 64 mJ

• High Surge Current Capacity

• Positive Temperature Coefficient

• Ease of Paralleling

YWW

= Assembly Plant Code

= Data Code (Year & Week)

= Lot Code

• No Reverse Recovery/No Forward Recovery

• This Device is Pb−Free, Halogen Free/BFR Free and RoHS

Compliant

FFSB1065A = Specific Device Code

Applications

• General Purpose

• SMPS, Solar Inverter, UPS

• Power Switching Circuits

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Publication Order Number:

January, 2023 − Rev. 7

FFSB1065A/D

FFSB1065A

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

RRM

Peak Repetitive Reverse Voltage

Single Pulse Avalanche Energy (Note 1)

Continuous Rectified Forward Current @ T < 152°C

650

Continuous Rectified Forward Current @ T < 135°C

760

Non-Repetitive Peak Forward Surge Current

= 25°C, 10 ms

= 150°C, 10 ms

F, Max

740

Non-Repetitive Forward Surge Current

Repetitive Forward Surge Current

Power Dissipation

Half-Sine Pulse, t = 8.3 ms

F,SM

Half-Sine Pulse, t = 8.3 ms

F,RM

Ptot

= 25°C

106

°C

= 150°C

T , T

Operating and Storage Temperature Range

−55 to +175

STG

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. E of 64 mJ is based on starting T = 25°C, L = 0.5 mH, I = 16 A, V = 50 V.

THERMAL CHARACTERISTICS

Symbol

Parameter

Value

Unit

Thermal Resistance, Junction to Case, Max

1.4

°C/W

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Symbol

Parameter

Forward Voltage

Test Condition

I = 10 A, T = 25°C

Min

−

Typ

1.5

1.6

1.72

−

Max

1.75

2.0

2.4

200

400

600

−

Unit

I = 10 A, T = 125°C

−

I = 10 A, T = 175°C

−

Reverse Current

= 650 V, T = 25°C

−

= 650 V, T = 125°C

−

= 650 V, T = 175°C

−

Total Capacitive Charge

Total Capacitance

V = 400 V

−

575

= 1 V, f = 100 kHz

= 200 V, f = 100 kHz

= 400 V, f = 100 kHz

−

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

PACKAGE MARKING AND ORDERING INFORMATION

†

Part Number

Top Marking

Package

Reel Size

Tape Width

Shipping

FFSB1065A

D2PAK−2L

(TO−263−2L)

Pb−Free/Halogen

Free

330 mm

24 mm

800 Units /

Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

www.onsemi.com

FFSB1065A

TYPICAL CHARACTERISTICS

(T = 25°C UNLESS OTHERWISE NOTED)

10⁻⁵

10⁻⁶

10⁻⁷

= 175

= 125

T_J= 175 ^o

T_J= 125 ^o

= 75 C

10⁻⁸

10⁻⁹

T_J= 25 ^o

T_J= −55^oC

T_J= 75 ^o

= 25 C

= −55 C

0.0

0.5

1.0

1.5

2.0

200

300

400

500

600 650

V , FORWARD VOLTAGE (V)

V_R, REVERSE VOLTAGE (V)

Figure 1. Forward Characteristics

Figure 2. Reverse Characteristics

150

100

120

100

D = 0.1

D = 0.2

D = 0.3

D = 0.5

D = 0.7

D = 1

100 125 150 175

_C, CASE TEMPERATURE^o(C)

Figure 3. Current Derating

Figure 4. Power Derating

1000

100

0.1

100

650

100 200 300 400 500 600650

V_R, REVERSE VOLTAGE (V)

Figure 5. Capacitive Charge vs. Reverse Voltage

Figure 6. Capacitance vs. Reverse Voltage

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FFSB1065A

TYPICAL CHARACTERISTICS

(T = 25°C UNLESS OTHERWISE NOTED)

100 200 300 400 500 600650

V_R, REVERSE VOLTAGE (V)

Figure 7. Capacitance Stored Energy

DUTY CYCLE−DESCENDING ORDER

D=0.5

10⁻¹

10⁻²

10⁻³

10⁻⁴

P_DM

D=0.2

D=0.1

D=0.05

D=0.02

t₁

t₂

D=0.01

NOTES:

(t) = r(t) x R

qJC

= 1.4 C/W

qJC

Peak T = P

Duty Cycle, D = t / t

x Z (t) + T

qJC C

SINGLE PULSE

10⁻⁵

10⁻⁶

10⁻⁴

t, RECTANGULAR PULSE DURATION (sec)

10⁻³

10⁻²

10⁻¹

Figure 8. Junction-to-Case Transient Thermal Response Curve

TEST CIRCUIT AND WAVEFORMS

L = 0.5 mH

R < 0.1 W

= 50 V

EAVL = 1/2LI2 [V

/ (V − V )]

R(AVL) DD

R(AVL)

Q1 = IGBT (BV

> DUT V

)

CES

R(AVL)

AVL

CURRENT

SENSE

I V

DUT

−

Figure 9. Unclamped Inductive Switching Test Circuit & Waveform

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MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

D²PAK2 (TO−263−2L)

CASE 418BK

ISSUE O

DATE 02 AUG 2018

GENERIC

MARKING DIAGRAM*

XXXXXXXXG

AYWW

XXX = Specific Device Code

= Assembly Location

= Year

WW = Work Week

= Pb−Free Package

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”,

may or may not be present. Some products

may not follow the Generic Marking.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON93788G

D²PAK2 (TO−263−2L)

PAGE 1 OF 1

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