FFSB20120A [ONSEMI]

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D1, D2PAK-2L;


型号：	FFSB20120A
厂家：	ONSEMI
描述：	Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D1, D2PAK-2L
文件：	总7页 (文件大小：328K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

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Silicon Carbide (SiC)

Schottky Diode – EliteSiC,

20 A, 1200 V, D1, D2PAK-2L

1., 3. Cathode

2. Anode

Schottky Diode

FFSB20120A

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new

technology that provides superior switching performance and higher

reliability compared to Silicon. No reverse recovery current,

temperature independent switching characteristics, and excellent

thermal performance sets Silicon Carbide as the next generation of

power semiconductor. System benefits include highest efficiency,

faster operating frequency, increased power density, reduced EMI, and

reduced system size & cost.

D PAK2 (TO−263−2L)

CASE 418BK

MARKING DIAGRAM

Features

FFSB

20120A

AYWWZZ

• Max Junction Temperature 175°C

• Avalanche Rated 200 mJ

• High Surge Current Capacity

• Positive Temperature Coefficient

• Ease of Paralleling

• No Reverse Recovery / No Forward Recovery

FFSB20120A

YWW

= Specific Device Code

= Assembly Site

= Date Code (Year & Week)

= Lot Code

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• General Purpose

• SMPS, Solar Inverter, UPS

• Power Switching Circuits

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Publication Order Number:

January, 2023 − Rev. 2

FFSB20120A/D

FFSB20120A

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Symbol

Parameter

Value

1200

200

Unit

RRM

Peak Repetitive Reverse Voltage

Single Pulse Avalanche Energy (Note 1)

Continuous Rectified Forward Current @ T < 157°C

Continuous Rectified Forward Current @ T < 135°C

Non-Repetitive Peak Forward Surge Current

1190

990

= 25°C, 10 ms

= 150°C, 10 ms

F, Max

Non-Repetitive Forward Surge Current

Repetitive Forward Surge Current

Power Dissipation

Half-Sine Pulse, t = 8.3 ms

135

F,SM

Half-Sine Pulse, t = 8.3 ms

F,RM

Ptot

= 25°C

333

°C

= 150°C

T , T

Operating and Storage Temperature Range

−55 to +175

STG

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. E of 200 mJ is based on starting T = 25°C, L = 0.5 mH, I = 29 A, V = 50 V.

THERMAL CHARACTERISTICS

Symbol

Parameter

Value

Unit

Thermal Resistance, Junction to Case, Max

0.45

°C/W

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Symbol

Parameter

Forward Voltage

Test Condition

I = 20 A, T = 25°C

Min

−

Typ

1.45

1.7

2.0

−

Max

1.75

2.0

2.4

200

300

400

−

Unit

I = 20 A, T = 125°C

−

I = 20 A, T = 175°C

−

Reverse Current

= 1200 V, T = 25°C

−

= 1200 V, T = 125°C

−

= 1200 V, T = 175°C

−

Total Capacitive Charge

Total Capacitance

V = 800 V

−

120

1220

111

= 1 V, f = 100 kHz

= 400 V, f = 100 kHz

= 800 V, f = 100 kHz

−

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

ORDERING INFORMATION

Part Number

Top Marking

Package

Shipping

FFSB20120A

D PAK2 (TO−263−2L)

800 / Tape & Reel

(Pb-Free / Halogen Free)

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FFSB20120A

TYPICAL CHARACTERISTICS

(T = 25°C UNLESS OTHERWISE NOTED)

10¹

10⁰

T_J= −55^oC

T_J= 25 ^o

T_J= 75 ^o

T_J= 125 ^o

T_J= 175 ^o

= 175

= 125

10⁻¹

10⁻²

10⁻³

= 75 C

= 25 C

= −55 C

0.0

0.5

1.0

1.5

2.0

2.5

3.0

200

400

600

800

1000 1200

V , FORWARD VOLTAGE (V)

V_R, REVERSE VOLTAGE (V)

Figure 1. Forward Characteristics

Figure 2. Reverse Characteristics

350

300

250

200

150

100

250

200

150

100

D = 0.1

D = 0.2

D = 0.3

D = 0.5

D = 0.7

D = 1

100

125

150

175

100

125

150

175

T_C, CASE TEMPERATURE (C)

Figure 3. Current Derating

Figure 4. Power Derating

150

125

100

5000

1000

100

200

400

600

800 1000

0.1

V_R, REVERSE VOLTAGE (V)

Figure 6. Capacitance vs. Reverse Voltage

100

1000

V_R, REVERSE VOLTAGE (V)

Figure 5. Capacitive Charge vs. Reverse

Voltage

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FFSB20120A

TYPICAL CHARACTERISTICS

(T = 25°C UNLESS OTHERWISE NOTED)

200

400

600

800 1000

V_R, REVERSE VOLTAGE (V)

Figure 7. Capacitance Stored Energy

DUTY CYCLE−DESCENDING ORDER

0.1

P_DM

0.5

0.2

0.1

t₁

0.01

0.05

t₂

0.02

0.01

NOTES:

(t) = r(t) x R

qJC

0.001

= 0.45 C/W

qJC

Peak T = P

Duty Cycle, D = t / t

x Z (t) + T

SINGLE PULSE

qJC C

0.0001

10⁻⁶

10⁻⁵

10⁻⁴

t, RECTANGULAR PULSE DURATION (sec)

10⁻³

10⁻²

10⁻¹

Figure 8. Junction-to-Case Transient Thermal Response Curve

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FFSB20120A

TEST CIRCUIT AND WAVEFORMS

L = 0.5 mH

R < 0.1 W

= 50 V

EAVL = 1/2LI2 [V

/ (V − V )]

R(AVL) DD

R(AVL)

Q1 = IGBT (BV

> DUT V

)

CES

R(AVL)

AVL

CURRENT

SENSE

I V

DUT

−

Figure 9. Unclamped Inductive Switching Test Circuit & Waveform

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MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

D²PAK2 (TO−263−2L)

CASE 418BK

ISSUE O

DATE 02 AUG 2018

GENERIC

MARKING DIAGRAM*

XXXXXXXXG

AYWW

XXX = Specific Device Code

= Assembly Location

= Year

WW = Work Week

= Pb−Free Package

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”,

may or may not be present. Some products

may not follow the Generic Marking.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON93788G

D²PAK2 (TO−263−2L)

PAGE 1 OF 1

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