FFSB2065B [ONSEMI]
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D2, D2PAK-2L;型号: | FFSB2065B |
厂家: | ONSEMI |
描述: | Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D2, D2PAK-2L 功效 测试 光电二极管 |
文件: | 总6页 (文件大小:323K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
Schottky Diode – EliteSiC,
20 A, 650 V, D2, D2PAK-2L
1., 3. Cathode
2. Anode
Schottky Diode
FFSB2065B
Description
3
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size & cost.
1
2
2
D PAK2 (TO−263−2L)
CASE 418BK
MARKING DIAGRAM
Features
• Max Junction Temperature 175°C
• Avalanche Rated 94 mJ
FFSB
2065B
AYWWZZ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery/No Forward Recovery
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
FFSB2065B
A
= Specific Device Code
= Assembly Site
Compliant
YWW
ZZ
= Date Code (Year & Week)
= Lot Code
Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
January, 2023 − Rev. 2
FFSB2065B/D
FFSB2065B
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Value
650
94
Unit
V
V
RRM
Peak Repetitive Reverse Voltage
E
AS
Single Pulse Avalanche Energy (Note 1)
Continuous Rectified Forward Current
mJ
A
I
F
20
@ T < 142°C
C
Continuous Rectified Forward Current
22.8
@ T < 135°C
C
I
Non−Repetitive Peak
882
798
84
A
T
T
= 25°C, 10 ms
= 150°C, 10 ms
F, Max
C
Forward Surge Current
C
I
Non−Repetitive Forward Surge Current T
25°C
=
Half−Sine Pulse, t = 8.3 ms
A
F, SM
C
p
P
tot
Power Dissipation
T
T
= 25°C
153
25.5
W
C
= 150°C
C
T , T
Operating Junction and Storage Temperature Range
−55 to +175
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. E of 94 mJ is based on starting T = 25°C, L = 0.5 mH, I = 19.4 A, V = 50 V.
AS
J
AS
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
Unit
°C/W
R
0.98
Thermal Resistance, Junction to Case, Max
q
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Forward Voltage
Test Conditions
I = 20 A, T = 25°C
Min.
−
Typ.
Max.
1.7
2.0
2.4
40
80
160
−
Unit
V
F
1.38
1.6
1.72
0.5
1
V
F
C
I = 20 A, T = 125°C
−
F
C
I = 20 A, T = 175°C
−
F
C
I
R
Reverse Current
V
R
V
R
V
R
= 650 V, T = 25°C
−
mA
C
= 650 V, T = 125°C
−
C
= 650 V, T = 175°C
−
2
C
Q
Total Capacitive Charge
Total Capacitance
V = 400 V
−
51
nC
pF
C
C
V
R
V
R
V
R
= 1 V, f = 100 kHz
= 300 V, f = 100 kHz
= 600 V, f = 100 kHz
−
866
80
−
tot
−
−
−
70
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
†
Part Number
Top Marking
Package
D PAK2 (TO−263−2L)
Shipping
2
FFSB2065B
FFSB2065B
800 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
FFSB2065B
TYPICAL CHARACTERISTICS (T = 25°C UNLESS OTHERWISE NOTED)
J
−5
40
30
10
T = −55°C
J
T
= 25°C
J
−6
−7
−8
10
10
10
T
= 175°C
J
T
= 75°C
J
T
J
= 125°C
T
J
= 175°C
20
10
0
T
J
= 125°C
T
J
= 75°C
T
J
= 25°C
T = −55°C
J
−9
10
0
0.5
1
1.5
2
2.5
3
100
200
300
400
500
600 650
V , REVERSE VOLTAGE (V)
R
V , FORWARD VOLTAGE (V)
F
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
200
150
100
180
120
D = 0.1
D = 0.2
D = 0.3
D = 0.5
60
0
50
0
D = 1
D = 0.7
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T , CASE TEMPERATURE (5C)
Figure 4. Power Derating
T , CASE TEMPERATURE (5C)
C
C
Figure 3. Current Derating
90
60
30
0
5000
1000
100
50
0
100
200
300
400
500
600 650
0.1
1
10
100
650
V , REVERSE VOLTAGE (V)
R
V , REVERSE VOLTAGE (V)
R
Figure 5. Capacitive Charge vs. Reverse Voltage
Figure 6. Capacitance vs. Reverse Voltage
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3
FFSB2065B
TYPICAL CHARACTERISTICS (T = 25°C UNLESS OTHERWISE NOTED)
J
(CONTINUED)
20
15
10
5
0
300
400
500
600 650
0
100
200
V , REVERSE VOLTAGE (V)
R
Figure 7. Capacitance Stored Energy
2
1
DUTY CYCLE − DESCENDING ORDER
D = 0.5
P
DM
0.1
D = 0.2
D = 0.1
t
1
t
2
D = 0.05
D = 0.02
D = 0.01
0.01
NOTES:
(t) = r(t) × R
Z
qJC
qJC
R
q
= 0.98°C/W
JC
Peak T = P
Duty cycle, D = t /t
× Z
(t) + T
JC C
q
J
DM
SINGLE PULSE
1
2
0.001
−6
−5
−4
−3
−2
−1
10
10
10
10
10
10
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 8. Junction−to−Case Transient Thermal Response Curve
L = 0.5 mH
R < 0.1 W
V
DD
= 50 V
EAVL = 1/2LI2 [V
/ (V − V )]
R(AVL) DD
R(AVL)
Q1 = IGBT (BV
> DUT V
)
CES
R(AVL)
V
AVL
L
R
+
V
CURRENT
SENSE
DD
I
L
I
L
Q1
I V
V
DD
DUT
−
t
0
t
1
t
2
t
Figure 9. Unclamped Inductive Switching Test Circuit & Waveform
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK2 (TO−263−2L)
CASE 418BK
ISSUE O
DATE 02 AUG 2018
GENERIC
MARKING DIAGRAM*
XXXXXXXXG
AYWW
XXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON93788G
D2PAK2 (TO−263−2L)
PAGE 1 OF 1
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