FFSD10120A [ONSEMI]
碳化硅肖特基二极管;
| 型号： | FFSD10120A |
| 厂家： | 
ONSEMI |
| 描述： | 碳化硅肖特基二极管 局域网 功效 光电二极管 肖特基二极管 |
| 文件： | 总6页 (文件大小：395K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Silicon Carbide (SiC)
Schottky Diode – EliteSiC,
10 A, 1200 V, D1, DPAK
1, 3 Cathode
2 Anode
Schottky Diode
FFSD10120A
Description
3
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
1
2
DPAK
CASE 369AS
Features
MARKING DIAGRAM
• Max Junction Temperature 175°C
• Avalanche Rated 100 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
FFS
D10120A
AYWWZZ
• No Reverse Recovery/No Forward Recovery
• This Device is Pb−Free, Halogen Free/BFR Free and RoHS
Compliant
Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits
FFSD10120A
A
Y
WW
ZZ
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Assembly Lot Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
February, 2023 − Rev. 4
FFSD10120A/D
FFSD10120A
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Symbol
V
Parameter
Value
1200
100
Unit
V
Peak Repetitive Reverse Voltage
Single Pulse Avalanche Energy (Note 1)
Continuous Rectified Forward Current @ T < 164°C
RRM
E
AS
mJ
A
I
F
10
C
Continuous Rectified Forward Current @ T < 135°C
22
A
C
I
Non-Repetitive Peak Forward Surge Current
850
A
T
C
T
C
= 25°C, 10 ms
= 150°C, 10 ms
F,Max
800
A
I
Non-Repetitive Forward Surge Current
Repetitive Forward Surge Current
Power Dissipation
Half−Sine Pulse, t = 8.3 ms
90
A
F,SM
p
I
Half−Sine Pulse, t = 8.3 ms
35
A
F,RM
p
P
T
= 25°C
283
W
W
°C
TOT
C
C
T
= 150°C
47
T , T
J
Operating and Storage Temperature Range
−55 to +175
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. E of 100 mJ is based on starting T = 25°C, L = 0.5 mH, I = 20 A, V = 150 V.
AS
J
AS
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
R
Thermal Resistance, Junction to Case, Max
0.53
°C/W
q
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Forward Voltage
Test Condition
I = 10 A, T = 25°C
Min
−
Typ
1.45
1.7
2.0
−
Max
1.75
2.0
2.4
200
300
400
−
Unit
V
F
V
F
C
I = 10 A, T = 125°C
−
F
C
I = 10 A, T = 175°C
−
F
C
I
R
Reverse Current
V
R
V
R
V
R
= 1200 V, T = 25°C
−
mA
C
= 1200 V, T = 125°C
−
−
C
= 1200 V, T = 175°C
−
−
C
Q
Total Capacitive Charge
Total Capacitance
V = 800 V
−
62
612
58
47
nC
pF
C
C
V
R
V
R
V
R
= 1 V, f = 100 kHz
= 400 V, f = 100 kHz
= 800 V, f = 100 kHz
−
−
−
−
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
Quantity
†
FFSD10120A
FFSD10120A
DPAK
Tape & Reel
13″
N/A
2500 Units
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
FFSD10120A
TYPICAL CHARACTERISTICS
(T = 25°C UNLESS OTHERWISE NOTED)
J
1
20
15
10
T = −55°C
T = 25°C
J
J
0
10
T = 75°C
J
T = 175°C
J
T = 125°C
J
−1
10
5
10
T = 125°C
J
T = 175°C
J
−2
10
10
T = 25°C
J
T = 75°C
J
T = −55°C
J
−3
0
0
1
2
3
4
200
400
600
800
1000
1200
V , Forward Voltage (V)
F
V , Reverse Voltage (V)
R
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
1.0
0.8
0.6
0.4
0.2
0.0
250
200
150
100
50
T = −55°C
T = 25°C
J
J
D = 0.1
T = 75°C
J
D = 0.2
D = 0.3
D = 0.5
T = 125°C
J
T = 175°C
J
D = 0.7
D = 1
0
1000
1100
1200
1300
1400
1500
25
50
75
100
125
150
175
V , Reverse Voltage (V)
T , Case Temperature (5C)
R
C
Figure 4. Current Derating
Figure 3. Reverse Characteristics
300
250
200
150
100
50
80
60
40
20
0
0
0
200
400
600
800
1000
25
50
75
100
125
150
175
V , Reverse Voltage (V)
T , Case Temperature (5C)
R
C
Figure 5. Power Derating
Figure 6. Capacitive Charge vs. Reverse Voltage
www.onsemi.com
3
FFSD10120A
TYPICAL CHARACTERISTICS (CONTINUED)
(T = 25°C UNLESS OTHERWISE NOTED)
J
5000
1000
30
20
10
0
100
10
0.1
1
10
100
1000
0
200
400
600
800
1000
V , Reverse Voltage (V)
R
V , Reverse Voltage (V)
R
Figure 7. Capacitance vs. Reverse Voltage
Figure 8. Capacitance Stored Energy
2
DUTY CIRCLE−DESCENDING ORDER
1
D=0.5
PDM
0.2
t1
t2
0.1
0.05
0.02
NOTES:
Z
(t) = r(t) × R
q
JC
= 0.53°C/W
q
JC
R
q
JC
0.01
Peak T = P
× Z (t) + T
q
JC C
J
DM
Duty Cycle, D = t / t
SINGLE PULSE
0.1
1
2
−4
−3
−2
−1
10
10
10
t, Rectangular Pulse Duration (s)
10
1
Figure 9. Junction−to−Case Transient Thermal Response Curve
TEST CIRCUIT AND WAVEFORMS
L = 0.5 mH
R < 0.1 W
V
DD
= 50 V
EAVL = 1/2LI2 [V
/ (V − V )]
R(AVL) DD
R(AVL)
Q1 = IGBT (BV
> DUT V
)
CES
R(AVL)
V
AVL
L
R
+
V
CURRENT
SENSE
DD
I
L
I
L
Q1
I V
DUT
V
DD
−
t
0
t
1
t
2
t
Figure 10. Unclamped Inductive Switching Test Circuit & Waveform
www.onsemi.com
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK3 (TO−252 3 LD)
CASE 369AS
ISSUE A
DATE 28 SEP 2022
GENERIC
MARKING DIAGRAM*
XXXXXX
XXXXXX
AYWWZZ
XXXX = Specific Device Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ
= Assembly Lot Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON13810G
DPAK3 (TO−252 3 LD)
PAGE 1 OF 1
DESCRIPTION:
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
©2020 ICPDF网 联系我们和版权申明