FFSH10120A [ONSEMI]

SiC 二极管，1200V，10A，TO-247-2;


型号：	FFSH10120A
厂家：	ONSEMI
描述：	SiC 二极管，1200V，10A，TO-247-2 二极管
文件：	总7页 (文件大小：350K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

Schottky Diode – EliteSiC,

10 A, 1200 V, D1, TO-247-2L

1. Cathode

2. Anode

Schottky Diode

FFSH10120A

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new

technology that provides superior switching performance and higher

reliability compared to Silicon. No reverse recovery current,

temperature independent switching characteristics, and excellent

thermal performance sets Silicon Carbide as the next generation of

power semiconductor. System benefits include highest efficiency,

faster operating frequency, increased power density, reduced EMI, and

reduced system size & cost.

TO−247−2LD

CASE 340CL

MARKING DIAGRAM

Features

• Max Junction Temperature 175°C

• Avalanche Rated 100 mJ

• High Surge Current Capacity

• Positive Temperature Coefficient

• Ease of Paralleling

AYWWZZ

FFSH

10120A

• No Reverse Recovery/No Forward Recovery

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• General Purpose

• SMPS, Solar Inverter, UPS

• Power Switching Circuits

YWW

= Assembly Plant Code

= Date Code (Year & Week)

= Lot Code

FFSH10120A

= Specific Device Code

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Publication Order Number:

January, 2023 − Rev. 2

FFSH10120A/D

FFSH10120A

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Symbol

Parameter

Value

1200

100

Unit

RRM

Peak Repetitive Reverse Voltage

Single Pulse Avalanche Energy (Note 1)

Continuous Rectified Forward Current @ T < 158°C

Continuous Rectified Forward Current @ T < 135°C

Non-Repetitive Peak Forward Surge Current

850

= 25°C, 10 ms

= 150°C, 10 ms

F, Max

800

Non-Repetitive Forward Surge Current

Repetitive Forward Surge Current

Power Dissipation

Half-Sine Pulse, t = 8.3 ms

F,SM

Half-Sine Pulse, t = 8.3 ms

F,RM

Ptot

= 25°C

193

= 150°C

T , T

Operating and Storage Temperature Range

−55 to +175

°C

Ncm

STG

TO−247 Mounting Torque, M3 Screw

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. E of 100 mJ is based on starting T = 25°C, L = 0.5 mH, I = 20 A, V = 50 V.

THERMAL CHARACTERISTICS

Symbol

Parameter

Value

Unit

Thermal Resistance, Junction to Case, Max

0.78

°C/W

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Symbol

Parameter

Forward Voltage

Test Condition

I = 10 A, T = 25°C

Min

−

Typ

1.45

1.7

2.0

−

Max

1.75

2.0

2.4

200

300

400

−

Unit

I = 10 A, T = 125°C

−

I = 10 A, T = 175°C

−

Reverse Current

= 1200 V, T = 25°C

−

= 1200 V, T = 125°C

−

= 1200 V, T = 175°C

−

Total Capacitive Charge

Total Capacitance

V = 800 V

−

612

= 1 V, f = 100 kHz

= 400 V, f = 100 kHz

= 800 V, f = 100 kHz

−

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

ORDERING INFORMATION

Part Number

Top Marking

Package

Shipping

FFSH10120A

TO−247−2LD

(Pb-Free / Halogen Free)

30 Units / Tube

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FFSH10120A

TYPICAL CHARACTERISTICS

(T = 25°C UNLESS OTHERWISE NOTED)

T_J= −55 ^oC

T_J= 25 ^o

_J= 75^oC

= 175 C

= 125 C

10⁻¹

T_J= 125 ^oC

T_J= 175 ^o

= 75 C

10⁻²

= 25

= −55 C

10⁻³

200

400

600

800

1000

1200

V_F, FORWARD CURRENT (V)

V_R, REVERESE VOLTAGE (V)

Figure 1. Forward Characteristics

Figure 2. Reverse Characteristics

1.0

0.8

0.6

0.4

0.2

0.0

120

T_J= −55^oC

D = 0.1

T_J= 25^oC

D = 0.2

D = 0.3

D = 0.5

_J= 75^oC

T_J= 125^oC

T_J= 175^oC

D = 0.7

D = 1

1000

1100

1200

1300

1400

1500

100

125

150

175

T_C, CASE TEMPERATURE (^oC)

, REVERSE VOLTAGE (V)

Figure 3. Reverse Characteristics

Figure 4. Current Derating

200

150

100

200

400

600

800

1000

100

125

150

175

T_C, CASE TEMPERATURE (^oC)

V_R, REVERSE VOLTAGE (V)

Figure 5. Power Derating

Figure 6. Capacitive Charge vs. Reverse

Voltage

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FFSH10120A

TYPICAL CHARACTERISTICS

(T = 25°C UNLESS OTHERWISE NOTED)

5000

1000

100

0.1

100

1000

200

400

600

800

1000

V_R, REVERESE VOLTAGE (V)

V_R, REVERVE VOLTAGE (V)

Figure 7. Capacitance vs. Reverse Voltage

Figure 8. Capacitance Stored Energy

DUTY CIRCLE−DESCENDING ORDER

10⁻¹

10⁻²

10⁻³

10⁻⁴

D=0.5

D=0.2

D=0.1

D=0.05

D=0.02

D=0.01

NOTES:

(t) = r(t) x R

qJC

= 0.78 C/W

qJC

Peak T = P

Duty Cycle, D = t / t

x Z (t) + T

qJC C

SINGLE PULSE

10⁻⁶10⁻⁵

10⁻⁴

t, RECTANGULAR PULSE DURATION (sec)

10⁻³

10⁻²

10⁻¹

Figure 9. Junction-to-Case Transient Thermal Response Curve

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FFSH10120A

TEST CIRCUIT AND WAVEFORMS

L = 0.5 mH

R < 0.1 W

= 50 V

EAVL = 1/2LI2 [V

/ (V − V )]

R(AVL) DD

R(AVL)

Q1 = IGBT (BV

> DUT V

)

CES

R(AVL)

AVL

CURRENT

SENSE

I V

DUT

−

Figure 10. Unclamped Inductive Switching Test Circuit & Waveform

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MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

TO−247−2LD

CASE 340CL

ISSUE A

DATE 03 DEC 2019

GENERIC

MARKING DIAGRAM*

AYWWZZ

XXXXXXX

XXXX = Specific Device Code

= Assembly Location

= Year

WW = Work Week

= Assembly Lot Code

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may

or may not be present. Some products may

not follow the Generic Marking.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON13850G

TO−247−2LD

PAGE 1 OF 1

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