FFSH1065B-F085 [ONSEMI]
Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10A, 650V, D2, TO-247-2L;
| 型号： | FFSH1065B-F085 |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10A, 650V, D2, TO-247-2L |
| 文件： | 总6页 (文件大小：366K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Silicon Carbide (SiC)
Schottky Diode – EliteSiC,
10 A, 650 V, D2, TO-247-2L
1
2
Cathode
Anode
FFSH1065B-F085
Schottky Diode
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size & cost.
TO−247−2LD
CASE 340DA
Features
• Max Junction Temperature 175°C
• Avalanche Rated 51 mJ
MARKING DIAGRAM
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery/No Forward Recovery
• AEC−Q101 Qualified
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
AYWWZZ
FFSH
1065B
Applications
• Automotive HEV−EV Onboard Chargers
• Automotive HEV−EV DC−DC Converters
A
= Assembly Plant Code
YWW
ZZ
= Date Code (Year & Week)
= Lot Code
FFSH1065B
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
February, 2023 − Rev. 1
FFSH1065B−F085/D
FFSH1065B−F085
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Value
650
51
Unit
V
V
RRM
Peak Repetitive Reverse Voltage
Single Pulse Avalanche Energy
E
AS
(Note 1)
mJ
A
I
F
Continuous Rectified Forward Current @ T < 142°C
10
C
Continuous Rectified Forward Current @ T < 135°C
11.5
600
535
42
C
I
Non-Repetitive Peak Forward Surge Current
A
A
A
T
= 25°C, 10 ms
= 150°C, 10 ms
F, Max
C
C
T
I
Non-Repetitive Forward Surge Current
C
Half-Sine Pulse, t = 8.3 ms
p
F,SM
T
= 25°C
Ptot
Power Dissipation
T
T
= 25°C
83
14
W
W
C
= 150°C
C
T , T
Operating and Storage Temperature Range
TO247 Mounting Torque, M3 Screw
−55 to +175
60
°C
J
STG
Ncm
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. E of 51 mJ is based on starting T = 25°C, L = 0.5 mH, I = 14.5 A, V = 50 V.
AS
J
AS
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
R
Thermal Resistance, Junction to Case, Max
1.81
°C/W
q
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Forward Voltage
Test Condition
I = 10 A, T = 25°C
Min
−
Typ
1.5
1.7
2
Max
1.7
2.0
2.4
40
80
160
−
Unit
V
F
V
F
C
I = 10 A, T = 125°C
−
F
C
I = 10 A, T = 175°C
−
F
C
I
R
Reverse Current
V
R
V
R
V
R
= 650 V, T = 25°C
−
0.5
1
mA
C
= 650 V, T = 125°C
−
C
= 650 V, T = 175°C
−
2
C
Q
Total Capacitive Charge
Total Capacitance
V = 400 V
−
25
421
40
34
nC
pF
C
C
V
R
V
R
V
R
= 1 V, f = 100 kHz
= 200 V, f = 100 kHz
= 400 V, f = 100 kHz
−
−
−
−
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Shipping
FFSH1065B−F085
FFSH1065B
TO−247−2LD
(Pb−Free / Halogen Free)
30 Units / Tube
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2
FFSH1065B−F085
TYPICAL CHARACTERISTICS
(T = 25°C UNLESS OTHERWISE NOTED)
J
10−5
20
15
10
5
T = −55oC
J
T = 175o C
J
T = 25o C
T = 125oC
J
J
10−6
10−7
10−8
T = 75oC
J
T = 175oC
J
T = 125oC
J
T = 75oC
J
T = 25oC
J
T = −55oC
J
−9
0
10
0
1
2
3
4
100 200
300
400
500
600 650
V , FORWARD VOLTAGE (V)
V , REVERSE VOLTAGE (V)
F
R
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
100
80
60
40
20
0
120
90
60
30
0
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.7
D = 1
25
50
75
100
125
150
175
25
50
T
75
100
125
150
175
, CASE TEMPERATURE (oC)
, CASE TEMPERATURE (oC)
T
C
C
Figure 3. Current Derating
Figure 4. Power Derating
40
30
20
10
0
1000
100
10
0
100 200 300 400 500 600 650
0.1
1
10
100
650
V , REVERSE VOLTAGE (V)
V , REVERSE VOLTAGE (V)
R
R
Figure 5. Capacitive Charge vs. Reverse Voltage
Figure 6. Capacitance vs. Reverse Voltage
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3
FFSH1065B−F085
TYPICAL CHARACTERISTICS
(T = 25°C UNLESS OTHERWISE NOTED)
J
10
8
6
4
2
0
0
100 200 300 400 500 600 650
V , REVERSE VOLTAGE (V)
R
Figure 7. Capacitance Stored Energy
2
1
DUTY CYCLE−DESCENDING ORDER
D=0.5
PDM
0.1
0.01
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
t1
t2
NOTES:
Z
R
(t) = r(t) x R
qJC
qJC
o
= 1.81 C/W
qJC
Peak T = P
x Z
(t) + T
J
DM
qJC C
Duty Cycle, D = t / t
1
2
SINGLE PULSE
10−5
0.001
10−6
10−4
t, RECTANGULAR PULSE DURATION (sec)
10−3
10−2
10−1
1
Figure 8. Junction-to-Case Transient Thermal Response Curve
TEST CIRCUIT AND WAVEFORMS
L = 0.5 mH
R < 0.1 W
V
DD
= 50 V
EAVL = 1/2LI2 [V
/ (V − V )]
R(AVL) DD
R(AVL)
Q1 = IGBT (BV
> DUT V
)
CES
R(AVL)
V
AVL
L
R
+
V
CURRENT
SENSE
DD
I
L
I
L
Q1
I V
V
DD
DUT
−
t
0
t
1
t
2
t
Figure 9. Unclamped Inductive Switching Test Circuit & Waveform
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−2LD
CASE 340DA
ISSUE A
DATE 27 FEB 2019
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
XXXXX = Specific Device Code
A
= Assembly Location
= Year
Y
WW
ZZ
= Work Week
= Assembly Lot Code
*This information is generic. Please refer to de-
vice data sheet for actual part marking. Pb−
Free indicator, “G” or microdot “ G”, may or
may not be present. Some products may not
follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON00714H
TO−247−2LD
PAGE 1 OF 1
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