FFSH1265BDN-F085 [ONSEMI]

Silicon Carbide (SiC) Schottky Diode - EliteSiC, 12A, 650V, D2, TO-247-3L;


型号：	FFSH1265BDN-F085
厂家：	ONSEMI
描述：	Silicon Carbide (SiC) Schottky Diode - EliteSiC, 12A, 650V, D2, TO-247-3L
文件：	总6页 (文件大小：334K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

Schottky Diode – EliteSiC,

12 A, 650 V, D2, TO-247-3L

Anode

Cathode/

Case

Anode

650 V, 12 A

Schottky Diode

FFSH1265BDN-F085

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new

technology that provides superior switching performance and higher

reliability compared to Silicon. No reverse recovery current,

temperature independent switching characteristics, and excellent

thermal performance sets Silicon Carbide as the next generation of

power semiconductor. System benefits include highest efficiency,

faster operating frequency, increased power density, reduced EMI, and

reduced system size & cost.

TO−247−3LD

CASE 340CX

Features

MARKING DIAGRAM

• Max Junction Temperature 175°C

• Avalanche Rated 24.5 mJ

• High Surge Current Capacity

• Positive Temperature Coefficient

• Ease of Paralleling

AYWWZZ

FFSH

1265BDN

• No Reverse Recovery/No Forward Recovery

• AEC−Q101 Qualified

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• Automotive HEV−EV Onboard Chargers

• Automotive HEV−EV DC−DC Converters

FFSH1265BDN

YWW

= Specific Device Code

= Assembly Plant Code

= Date Code (Year & Week)

= Pb−Free Package

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Publication Order Number:

FFSH1265BDN−F085/D

February, 2023 − Rev. 1

FFSH1265BDN−F085

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Symbol

Parameter

Value

650

Unit

RRM

Peak Repetitive Reverse Voltage

Single Pulse Avalanche Energy

(Note 1)

24.5*

6*/12**

7.2*/14.4**

510

Continuous Rectified Forward Current @ T < 145°C

Continuous Rectified Forward Current @ T < 135°C

Non-Repetitive Peak Forward Surge Current

= 25°C, 10 ms

= 150°C, 10 ms

F, Max

454

Non-Repetitive Forward Surge Current

Half-Sine Pulse, t = 8.3 ms

F,SM

= 25°C

Ptot

Power Dissipation

= 25°C

8.6

= 150°C

T , T

Operating and Storage Temperature Range

TO247 Mounting Torque, M3 Screw

−55 to +175

°C

STG

Ncm

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

* Per Leg, ** Per Device

1. E of 24.5 mJ is based on starting T = 25°C, L = 0.5 mH, I = 9.9 A, V = 50 V.

THERMAL CHARACTERISTICS

Symbol

Parameter

Value

Unit

Thermal Resistance, Junction to Case, Max

2.9*/1.5**

°C/W

* Per Leg, ** Per Device

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted (per leg))

Symbol

Parameter

Forward Voltage

Test Condition

I = 6 A, T = 25°C

Min

−

Typ

1.38

1.53

1.67

0.025

0.08

0.22

Max

Unit

1.7

2.0

2.4

160

−

I = 6 A, T = 125°C

−

I = 6 A, T = 175°C

−

Reverse Current

= 650 V, T = 25°C

−

= 650 V, T = 125°C

−

= 650 V, T = 175°C

−

Total Capacitive Charge

Total Capacitance

V = 400 V

−

= 1 V, f = 100 kHz

= 200 V, f = 100 kHz

= 400 V, f = 100 kHz

−

259

−

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

PACKAGE MARKING AND ORDERING INFORMATION

Part Number

Top Marking

Package

Shipping

FFSH1265BDN−F085

FFSH1265BDN

TO−247−3LD

(Pb−Free / Halogen Free)

30 Units / Tube

www.onsemi.com

FFSH1265BDN−F085

TYPICAL CHARACTERISTICS

10⁻⁶

T = −55^oC

T = 25^oC

T = 75^oC

T = 175^oC

10⁻⁷

10⁻⁸

10⁻⁹

T = 125^oC

T = 175^oC

T = 125^oC

T = 75^oC

T = 25^oC

T = −55^oC

0.0

100

200

300

400

500

600 650

0.5

1.0

1.5

2.0

2.5

3.0

V , FORWARD VOLTAGE (V)

V , REVERSE VOLTAGE (V)

Figure 1. Forward Characteristics

Figure 2. Reverse Characteristics

D = 0.1

D = 0.2

D = 0.3

D = 0.5

D = 0.7 D = 1

100

125

150

175

100

125

150

175

T , CASE TEMPERATURE (^o

, CASE TEMPERATURE (^oC)

Figure 3. Current Derating

Figure 4. Power Derating

1000

100

200

300

400

500

600 650

0.1

100

650

V , REVERSE VOLTAGE (V)

, REVERSE VOLTAGE (V)

Figure 5. Capacitive Charge vs. Reverse

Voltage

Figure 6. Capacitance vs. Reverse Voltage

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FFSH1265BDN−F085

TYPICAL CHARACTERISTICS

100

200

300

400

500

600 650

V , REVERSE VOLTAGE (V)

Figure 7. Capacitance Stored Energy

DUTY CYCLE−DESCENDING ORDER

D=0.5

P_DM

0.1

0.01

t₁

D=0.2

D=0.1

t₂

NOTES:

D=0.05

D=0.02

(t) = r(t) x R

= 2.9 C/W

qJC

Peak T = P

Duty Cycle, D = t / t

x Z (t) + T

qJC C

D=0.01

SINGLE PULSE

10⁻⁵

0.001

10⁻⁶

10⁻⁴

t, RECTANGULAR PULSE DURATION (sec)

10⁻³

10⁻²

10⁻¹

Figure 8. Junction−to−Case Transient Thermal Response

TEST CIRCUIT AND WAVEFORMS

L = 0.5 mH

R < 0.1 W

= 50 V

EAVL = 1/2LI2 [V

/ (V − V )]

R(AVL) DD

R(AVL)

Q1 = IGBT (BV

> DUT V

)

CES

R(AVL)

AVL

CURRENT

SENSE

I V

DUT

−

Figure 9. Unclamped Inductive Switching Test Circuit & Waveform

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MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

TO−247−3LD

CASE 340CX

ISSUE A

DATE 06 JUL 2020

GENERIC

MARKING DIAGRAM*

XXXXX = Specific Device Code

= Assembly Location

= Year

= Work Week

= Pb−Free Package

XXXXXXXXX

AYWWG

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”, may

or may not be present. Some products may

not follow the Generic Marking.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON93302G

TO−247−3LD

PAGE 1 OF 1

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